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公开(公告)号：US09985179B2
公开(公告)日：2018-05-29
申请号：US15700562
申请日：2017-09-11
Applicant: SORAA, INC.
Inventor： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J. F. David
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
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公开(公告)号：US08686458B2
公开(公告)日：2014-04-01
申请号：US13931359
申请日：2013-06-28
Applicant: Soraa, Inc.
Inventor： Michael R. Krames , Mark P. D'Evelyn , James W. Raring , Thomas M. Katona
CPC classification number: H05B37/02 , H01L33/16 , H01L33/32 , H01L33/405 , H01L2224/16 , H01L2224/48
Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.
Abstract translation: 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。
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3.发明授权公开(公告)号：US09564553B2
公开(公告)日：2017-02-07
申请号：US15074665
申请日：2016-03-18
Applicant: SORAA, INC.
Inventor： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J. F. David
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
Abstract translation: 发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该装置具有横向尺寸和厚的垂直尺寸，使得几何纵横比形成体积二极管，其在横向尺寸的范围内传递几乎均匀的电流密度。
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4.发明授权公开(公告)号：US09293644B2
公开(公告)日：2016-03-22
申请号：US14040379
申请日：2013-09-27
Applicant: SORAA, INC.
Inventor： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J. F. David
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
Abstract translation: 发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该装置具有横向尺寸和厚的垂直尺寸，使得几何纵横比形成体积二极管，其在横向尺寸的范围内传递几乎均匀的电流密度。
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公开(公告)号：US10043946B2
公开(公告)日：2018-08-07
申请号：US15226656
申请日：2016-08-02
Applicant: SORAA, INC.
Inventor： Rafael Aldaz , Aurelien J. F. David , Daniel F. Feezell , Thomas M. Katona , Rajat Sharma , Michael J. Cich
Abstract: A method of fabricating LEDs from a wafer comprising a substrate and epitaxial layers and having a substrate side and a epitaxial side, said method comprising: (a) applying a laser beam across at least one of said substrate side or said epitaxial side of said wafer to define at least one laser-scribed recess having a laser-machined surface; and (b) singulating said wafer along said laser-scribed recess to form singulated LEDs, said singulated LEDs having a top surface, a bottom surface, and a plurality of sidewalls, at least one of said sidewalls comprising at least a first portion comprising at least a portion of said laser-machined surface.
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Patent Agency Ranking
6.发明授权Methods and devices for light extraction from a Group III-nitride volumetric LED using surface and sidewall roughening 有权使用表面和侧壁粗糙化的III族氮化物体积LED的光提取方法和装置公开(公告)号：US09406843B2
公开(公告)日：2016-08-02
申请号：US14632755
申请日：2015-02-26
Applicant: SORAA, INC.
Inventor： Rafael Aldaz , Aurelien J. F. David , Daniel F. Feezell , Thomas M. Katona , Rajat Sharma
CPC classification number: H01L33/22 , H01L33/0075 , H01L33/18 , H01L33/32 , H01L33/58 , H01L2933/0033 , H01L2933/0083
Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.
Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。
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公开(公告)号：US10553754B2
公开(公告)日：2020-02-04
申请号：US15991951
申请日：2018-05-29
Applicant: SORAA, INC.
Inventor： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J. F. David
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
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公开(公告)号：US20150167909A1
公开(公告)日：2015-06-18
申请号：US14628562
申请日：2015-02-23
Applicant: SORAA, INC.
Inventor： Thomas M. Katona , Michael Ragan Krames
IPC: F21K99/00
CPC classification number: F21K9/64 , F21Y2105/12 , F21Y2105/16 , F21Y2113/13 , F21Y2115/10
Abstract: Light emitting devices and techniques for using remote blue phosphors in LED lamps are disclosed. An LED lamp is formed by configuring a first plurality of n of radiation sources to emit radiation characterized by a first wavelength, the first wavelength being substantially violet, and configuring a second plurality of m of radiation sources to emit radiation characterized by a second wavelength, the second wavelength also being substantially violet. Aesthetically-pleasing white light is emitted as the light from the radiation sources interacts with various wavelength converting materials (e.g., deposits of red-emitting materials, deposits of yellow/green-emitting materials, etc.) including a blue-emitting remote wavelength converting layer configured to absorb at least a portion of the radiation emitted by the first plurality of radiation sources. The remote wavelength converting layer emits wavelengths ranging from about 420 nm to about 520 nm.
Abstract translation: 公开了在LED灯中使用远程蓝色荧光体的发光器件和技术。 通过配置第一多个n个辐射源以发射以第一波长为特征的辐射，第一波长基本上为紫，并且配置第二多个m个辐射源以发射以第二波长为特征的辐射，形成LED灯， 第二波长也基本上是紫色的。 随着来自辐射源的光与各种波长转换材料（例如，红色发光材料的沉积物，黄色/绿色发光材料的沉积物等）相互作用，发出美学令人愉快的白光，包括发射蓝光的远程波长转换 层，被配置为吸收由第一多个辐射源发射的辐射的至少一部分。 远程波长转换层发射约420nm至约520nm的波长。
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9.发明授权Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening 有权使用表面和侧壁粗糙化的III族氮化物体积LED的光提取的方法和装置公开(公告)号：US09000466B1
公开(公告)日：2015-04-07
申请号：US13781633
申请日：2013-02-28
Applicant: Soraa, Inc.
Inventor： Rafael Aldaz , Aurelien David , Daniel F. Feezell , Thomas M. Katona , Rajat Sharma
CPC classification number: H01L33/22 , H01L33/0075 , H01L33/18 , H01L33/32 , H01L33/58 , H01L2933/0033 , H01L2933/0083
Abstract: Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.
Abstract translation: 本公开的实施例涉及用于从III族氮化物体积LED芯片实现高性能光提取的改进方法。 更具体地，本文公开了用于使用表面和侧壁粗糙化从III族氮化物体积LED芯片实现高性能光提取的技术。
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公开(公告)号：US20140021883A1
公开(公告)日：2014-01-23
申请号：US13931359
申请日：2013-06-28
Applicant: Soraa, Inc.
Inventor： Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames
IPC: H05B37/02
CPC classification number: H05B37/02 , H01L33/16 , H01L33/32 , H01L33/405 , H01L2224/16 , H01L2224/48
Abstract: A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.
Abstract translation: 发射波长为390-415nm的发光二极管器件具有具有活性区域的大量含镓和氮的衬底。 该器件的电流密度大于约175安培/厘米2，外部量子效率具有小于约5％的绝对效率。
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