公开(公告)号：US09076655B2

公开(公告)日：2015-07-07

申请号：US13743054

申请日：2013-01-16

Applicant: STATS ChipPAC, Ltd.

Inventor： Duk Ju Na ,  Calvert Tan ,  Chang Beom Yong

IPC: H01L21/44 ,  H01L21/02

CPC classification number: H01L21/02697 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/552 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/06181 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92125 ,  H01L2224/92222 ,  H01L2224/92242 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/04941 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2221/68304 ,  H01L2224/27 ,  H01L2221/68372 ,  H01L21/56 ,  H01L2221/68381 ,  H01L21/563 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

Abstract: A semiconductor device can be formed by first providing a semiconductor wafer, and forming a conductive via into the semiconductor wafer. A portion of the semiconductor wafer can be removed so that the conductive via extends above a surface of the semiconductor wafer. A first insulating layer can be formed over the surface of the semiconductor wafer and the conductive via, followed by a second insulating layer, the second insulating layer having a different material composition than the first insulating layer. Portions of the insulating layers can be removed to expose the conductive via.

Abstract translation: 可以通过首先提供半导体晶片并在半导体晶片中形成导电通孔来形成半导体器件。 可以去除半导体晶片的一部分，使得导电通孔延伸到半导体晶片的表面之上。 可以在半导体晶片和导电通孔的表面上形成第一绝缘层，随后是第二绝缘层，第二绝缘层具有与第一绝缘层不同的材料组成。 可以去除部分绝缘层以露出导电通孔。

公开(公告)号：US20140199838A1

公开(公告)日：2014-07-17

申请号：US13743054

申请日：2013-01-16

Applicant: STATS CHIPPAC, LTD.

Inventor： Duk Ju Na ,  Calvert Tan ,  Chang Beom Yong

IPC: H01L21/02

CPC classification number: H01L21/02697 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/552 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05666 ,  H01L2224/05687 ,  H01L2224/06181 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92125 ,  H01L2224/92222 ,  H01L2224/92242 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/04941 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2221/68304 ,  H01L2224/27 ,  H01L2221/68372 ,  H01L21/56 ,  H01L2221/68381 ,  H01L21/563 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00

Abstract: A semiconductor device can be formed by first providing a semiconductor wafer, and forming a conductive via into the semiconductor wafer. A portion of the semiconductor wafer can be removed so that the conductive via extends above a surface of the semiconductor wafer. A first insulating layer can be formed over the surface of the semiconductor wafer and the conductive via, followed by a second insulating layer, the second insulating layer having a different material composition than the first insulating layer. Portions of the insulating layers can be removed to expose the conductive via.

Abstract translation: 可以通过首先提供半导体晶片并在半导体晶片中形成导电通孔来形成半导体器件。 可以去除半导体晶片的一部分，使得导电通孔延伸到半导体晶片的表面之上。 可以在半导体晶片和导电通孔的表面上形成第一绝缘层，随后是第二绝缘层，第二绝缘层具有与第一绝缘层不同的材料组成。 可以去除部分绝缘层以露出导电通孔。