公开(公告)号：US07332744B2

公开(公告)日：2008-02-19

申请号：US10983927

申请日：2004-11-08

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01L27/15 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。

公开(公告)号：US20070086499A1

公开(公告)日：2007-04-19

申请号：US11613586

申请日：2006-12-20

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度是非氧化区域的宽度的一倍以上或其以上的七倍以下。 电流限制层与有源层之间的距离优选为50nm以上，500nm以下，更优选为180nm以上。

公开(公告)号：US20050139856A1

公开(公告)日：2005-06-30

申请号：US10983927

申请日：2004-11-08

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01S5/343 ,  H01L29/24 ,  H01L29/26 ,  H01S5/183 ,  H01S5/22

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。

公开(公告)号：US20070091966A1

公开(公告)日：2007-04-26

申请号：US11613608

申请日：2006-12-20

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

公开(公告)号：US08218594B2

公开(公告)日：2012-07-10

申请号：US12458754

申请日：2009-07-22

申请人： Osamu Maeda ,  Yuji Masui ,  Masaki Shiozaki ,  Takahiro Arakida ,  Takayuki Kawasumi

发明人： Osamu Maeda ,  Yuji Masui ,  Masaki Shiozaki ,  Takahiro Arakida ,  Takayuki Kawasumi

IPC分类号： H01S5/00

CPC分类号： H01S5/18327 ,  H01S5/02461 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18391 ,  H01S2301/166 ,  H01S2304/02 ,  H01S2304/04

摘要： The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer film reflector have a laminated structure in which reflectance of oscillation wavelength λx is almost constant without depending on temperature change. The active layer is made of a material with which a maximum gain is obtained at temperature higher than ambient temperature. The reflectance adjustment layer has a laminated structure in which difference ΔR(=Rx−Ry) between reflectance Rx of a region opposed to a central region of the light emission region and reflectance Ry of a region opposed to an outer edge region of the light emission region is increased associated with temperature increase from ambient temperature to high temperature.

摘要翻译： 本发明提供一种垂直腔表面发射激光器，包括：第一多层膜反射器; 具有发光区域的有源层; 第二多层膜反射器; 和反射率调整层。 第一多层膜反射器和第二多层膜反射器具有振荡波长λx的反射率几乎恒定而不依赖于温度变化的层叠结构。 有源层由在高于环境温度的温度下获得最大增益的材料制成。 反射率调整层具有层叠结构，其中与发光区域的中心区域相对的区域的反射率Rx与与发光区域的外边缘区域相对的区域的反射率Ry之间的差Dgr R（= Rx-Ry） 发光区域随温度从环境温度升高到高温而增加。

公开(公告)号：US20100040104A1

公开(公告)日：2010-02-18

申请号：US12458754

申请日：2009-07-22

申请人： Osamu Maeda ,  Yuji Masui ,  Masaki Shiozaki ,  Takahiro Arakida ,  Takayuki Kawasumi

发明人： Osamu Maeda ,  Yuji Masui ,  Masaki Shiozaki ,  Takahiro Arakida ,  Takayuki Kawasumi

IPC分类号： H01S5/183

CPC分类号： H01S5/18327 ,  H01S5/02461 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18391 ,  H01S2301/166 ,  H01S2304/02 ,  H01S2304/04

摘要： The present invention provides a Vertical Cavity Surface Emitting Laser including: a first multilayer film reflector; an active layer having a light emission region; a second multilayer film reflector; and a reflectance adjustment layer in this order on a substrate side. The first multilayer film reflector and the second multilayer film reflector have a laminated structure in which reflectance of oscillation wavelength λx is almost constant without depending on temperature change. The active layer is made of a material with which a maximum gain is obtained at temperature higher than ambient temperature. The reflectance adjustment layer has a laminated structure in which difference ΔR(=Rx−Ry) between reflectance Rx of a region opposed to a central region of the light emission region and reflectance Ry of a region opposed to an outer edge region of the light emission region is increased associated with temperature increase from ambient temperature to high temperature.

摘要翻译： 本发明提供一种垂直腔表面发射激光器，包括：第一多层膜反射器; 具有发光区域的有源层; 第二多层膜反射器; 和反射率调整层。 第一多层膜反射器和第二多层膜反射器具有振荡波长λx的反射率几乎恒定而不依赖于温度变化的层叠结构。 有源层由在高于环境温度的温度下获得最大增益的材料制成。 反射率调整层具有层叠结构，其中与发光区域的中心区域相对的区域的反射率Rx与与发光区域的外边缘区域相对的区域的反射率Ry之间的差Dgr R（= Rx-Ry） 发光区域随温度从环境温度升高到高温而增加。

公开(公告)号：US08385381B2

公开(公告)日：2013-02-26

申请号：US11427003

申请日：2006-06-28

申请人： Osamu Maeda ,  Masaki Shiozaki ,  Norihiko Yamaguchi ,  Yoshinori Yamauchi ,  Yuji Masui

发明人： Osamu Maeda ,  Masaki Shiozaki ,  Norihiko Yamaguchi ,  Yoshinori Yamauchi ,  Yuji Masui

IPC分类号： H01S5/00

CPC分类号： H01S5/18391 ,  H01S5/18313 ,  H01S5/18325 ,  H01S5/18327 ,  H01S5/18338 ,  H01S5/18344 ,  H01S5/18355 ,  H01S2301/166

摘要： In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.

摘要翻译： 在VCSEL中，依次层叠第一多层膜反射体，具有发光中心区域的有源层，第二多层膜反射体，横模式调整层。 第一多层膜反射器具有四边形电流注入区域，对应于发光中心区域的对角线交叉。 第二多层膜反射器具有设置在对应于当前注入区域的一个对角线的区域中的发光窗口和设置在其间的发光窗口的一对凹槽。 相对于发光窗设置横向模式调整层，其周边区域的反射率低于其中央区域的反射率。

公开(公告)号：US08363689B2

公开(公告)日：2013-01-29

申请号：US13064218

申请日：2011-03-11

申请人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

发明人： Osamu Maeda ,  Masaki Shiozaki ,  Takahiro Arakida

IPC分类号： H01S5/187

CPC分类号： H01S5/423 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/1838 ,  H01S5/187 ,  H01S5/34313 ,  H01S2304/04 ,  Y10S438/977

摘要： A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

公开(公告)号：US07526008B2

公开(公告)日：2009-04-28

申请号：US11746160

申请日：2007-05-09

申请人： Masaki Shiozaki

发明人： Masaki Shiozaki

IPC分类号： H01S5/00

CPC分类号： H01S5/18355 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/3201

摘要： A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction. Besides, where the trench or trenches are filled with a metallic material or insulating material which is absorptive with respect to the laser beam, the polarization ratio of the laser beam is further enhanced.

摘要翻译： 可以容易且廉价地制造能够将激光束的偏振方向控制在固定方向的表面发射半导体激光器件。 对电流限制层进行氧化处理，形成具有面内各向异性的矩形的电流通路区域。 此外，设置成平行于电流通道区域的对角方向中的任一方的其侧表面侧面的一对沟槽的光束出射孔设置在作为其中心的光束出射孔的相对位置处 。 使通过光束射出孔径出射的激光束的偏振方向仅被指定为一个方向，从而可以精确地将偏振方向控制到固定方向。 此外，在沟槽或沟槽充满相对于激光束吸收的金属材料或绝缘材料的情况下，激光束的偏振比进一步提高。

公开(公告)号：US20070248125A1

公开(公告)日：2007-10-25

申请号：US11746160

申请日：2007-05-09

申请人： Masaki Shiozaki

发明人： Masaki Shiozaki

IPC分类号： H01S3/10

CPC分类号： H01S5/18355 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/3201

摘要： A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction. Besides, where the trench or trenches are filled with a metallic material or insulating material which is absorptive with respect to the laser beam, the polarization ratio of the laser beam is further enhanced.

摘要翻译： 可以容易且廉价地制造能够将激光束的偏振方向控制在固定方向的表面发射半导体激光器件。 对电流限制层进行氧化处理，形成具有面内各向异性的矩形的电流通路区域。 此外，设置成平行于电流通道区域的对角方向中的任一方的其侧表面侧面的一对沟槽的光束出射孔设置在与出射孔作为中心的相对位置处 。 使通过光束射出孔径出射的激光束的偏振方向仅被指定为一个方向，从而可以精确地将偏振方向控制到固定方向。 此外，在沟槽或沟槽充满相对于激光束吸收的金属材料或绝缘材料的情况下，激光束的偏振比进一步提高。