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公开(公告)号：US20110141546A1
公开(公告)日：2011-06-16
申请号：US13058495
申请日：2008-08-26
CPC分类号： H01S5/341 , B82Y20/00 , G02B6/107 , G02B26/001 , H01S5/021 , H01S5/041 , H01S5/0607 , H01S5/30 , H03F17/00 , Y10T29/49147
摘要： A resonant cavity with tunable nanowire. The resonant cavity includes a substrate. The substrate is coupleable to an optical resonator structure. The resonant cavity also includes a plurality of nanowires formed on the substrate. The plurality of nanowires is actuated in response to an application of energy.
摘要翻译： 具有可调谐纳米线的谐振腔。 谐振腔包括衬底。 衬底可耦合到光学谐振器结构。 谐振腔还包括形成在衬底上的多个纳米线。 响应于能量的施加而致动多个纳米线。
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公开(公告)号：US08446661B2
公开(公告)日：2013-05-21
申请号：US13058495
申请日：2008-08-26
IPC分类号： G02B26/00
CPC分类号： H01S5/341 , B82Y20/00 , G02B6/107 , G02B26/001 , H01S5/021 , H01S5/041 , H01S5/0607 , H01S5/30 , H03F17/00 , Y10T29/49147
摘要： A resonant cavity with tunable nanowire. The resonant cavity includes a substrate. The substrate is coupleable to an optical resonator structure. The resonant cavity also includes a plurality of nanowires formed on the substrate. The plurality of nanowires is actuated in response to an application of energy.
摘要翻译： 具有可调谐纳米线的谐振腔。 谐振腔包括衬底。 衬底可耦合到光学谐振器结构。 谐振腔还包括形成在衬底上的多个纳米线。 响应于能量的施加而致动多个纳米线。
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公开(公告)号：US08547727B2
公开(公告)日：2013-10-01
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.
摘要翻译： 忆阻路由设备包括忆阻矩阵，响应于编程电场而与忆阻矩阵一起移动的移动掺杂物，并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。 一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件，其使得忆阻器件内的掺杂剂的运动改变电路特性。 用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域，然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态 在源电极和漏电极之间形成导电路径。
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公开(公告)号：US20130287336A1
公开(公告)日：2013-10-31
申请号：US13456767
申请日：2012-04-26
申请人： Shih-Yuan Wang , Michael Renne Ty Tan , Wayne Victor Sorin , Michael Schlansker , Sagi Varghese Mathai
发明人： Shih-Yuan Wang , Michael Renne Ty Tan , Wayne Victor Sorin , Michael Schlansker , Sagi Varghese Mathai
IPC分类号： G02B6/26
CPC分类号： G02B6/3538 , G02B6/3524
摘要： An apparatus comprises a given multimode optical waveguide extending in a given direction. The apparatus also comprises another multimode optical waveguide extending in another direction and intersecting with the given multimode waveguide. The apparatus further comprises a bi-stable optical switch positioned at the intersection of the given multimode optical waveguide and the another multimode optical waveguide to redirect a multimode optical signal transmitted on the given multimode optical waveguide to the another optical waveguide in a redirection state and pass the multimode optical signal transmitted on the given multimode optical waveguide across the intersection of the given multimode optical waveguide and the another optical waveguide in a pass-through state. The bi-stable optical switch can comprise a gap extending diagonally from a given corner of the intersection of the given and the another optical multimode waveguides to an opposing corner of the intersection.
摘要翻译： 一种装置包括沿给定方向延伸的给定多模光波导。 该装置还包括在另一个方向上延伸并且与给定的多模波导相交的另一个多模光波导。 该装置还包括位于给定多模光波导和另一多模光波导的交叉点处的双稳态光开关，以将在给定多模光波导上传输的多模光信号重定向到重定向状态的另一光波导并通过 在给定的多模光波导上通过给定的多模光波导与另一光波导在交叉状态的交点处发送的多模光信号。 双稳态光开关可以包括从给定的和另一个光学多模波导的交叉点的给定角向对角延伸到相交角的相对拐角处的间隙。
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5.发明授权Semiconductor structure having an ELOG on a thermally and electrically conductive mask 有权在导电导热膜上具有ELOG的半导体结构公开(公告)号：US08368118B2
公开(公告)日：2013-02-05
申请号：US13133370
申请日：2008-12-16
CPC分类号： H01L21/02639 , C30B25/04 , C30B29/06 , C30B29/40 , C30B29/52 , H01L21/0237 , H01L21/02538 , H01L21/02642
摘要： A semiconductor structure includes a substrate, a thermally and electrically conductive mask positioned upon the substrate, and an epitaxial lateral over growth (ELOG) material positioned upon the thermally and electrically conductive mask.
摘要翻译： 半导体结构包括衬底，位于衬底上的导热和导电掩模，以及位于导热和导电掩模上的外延横向生长（ELOG）材料。
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6.发明申请Nano-wire Optical Block Devices For Amplifying, Modulating, And Detecting Optical Signals 有权用于放大，调制和检测光信号的纳米线光块装置公开(公告)号：US20110123146A1
公开(公告)日：2011-05-26
申请号：US13002884
申请日：2008-07-31
CPC分类号： H01S5/341 , B82Y20/00 , G02B6/107 , H01L31/035227 , H01L31/035236 , H01L31/105 , H01S5/10 , H01S5/50 , H01S5/5018 , H01S5/5036
摘要： A nano-wire optical block device for amplifying, modulating, and detecting an optical signal in a large-core hollow metallized waveguide. The nano-wire optical block device comprises a substrate with a plurality of nano-wires coupled to the substrate to form the nano-wire optical block. Each properly formed nano-wire is comprised of a p-doped region, an intrinsic region, and an n-doped region. The nano-wire optical block is operable to be inserted into the large-core hollow metallized waveguide to provide at least one of amplifying, modulating, and detecting the optical signal.
摘要翻译： 一种用于在大芯中空金属化波导中放大，调制和检测光信号的纳米线光学块装置。 纳米线光学块器件包括具有耦合到衬底的多个纳米线以形成纳米线光学块的衬底。 每个正确形成的纳米线由p掺杂区域，本征区域和n掺杂区域组成。 纳米线光学块可操作地插入到大芯中空金属化波导中以提供放大，调制和检测光信号中的至少一个。
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公开(公告)号：US20110182107A1
公开(公告)日：2011-07-28
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachen , R. Stanely Williams , Marco Florentino , Shih-Yuan Wang , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachen , R. Stanely Williams , Marco Florentino , Shih-Yuan Wang , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).
摘要翻译： 忆阻路由设备（200）包括忆阻矩阵（240），移动掺杂物（255）响应于编程电场而与忆阻矩阵（240）一起移动，并且在没有编程的情况下保持稳定在忆阻矩阵（240）内 电场; 以及围绕所述忆阻矩阵（240）的至少三个电极（210,220,230）。 一种利用忆阻器件（900）来调谐电路的方法包括测量电路特性（805）并将编程电压施加到忆阻器件（900），其使得忆阻器件（900）内的掺杂剂的运动改变电路特性 （805）。 提高忆阻装置（1300）的切换速度的方法包括将来自两个几何分离的位置的掺杂剂绘制成紧邻形成两个导电区域（1380,1390），然后通过应用将所述忆阻装置（1300）切换到导电状态 编程电压，其迅速地合并两个导电区域（1380,1390）以在源电极（1310）和漏电极（1320）之间形成导电通路。
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8.发明申请SEMICONDUCTOR STRUCTURE HAVING AN ELOG ON A THERMALLY AND ELECTRICALLY CONDUCTIVE MASK 有权具有电导电导线的ELOG的半导体结构公开(公告)号：US20110241072A1
公开(公告)日：2011-10-06
申请号：US13133370
申请日：2008-12-16
IPC分类号： H01L29/12
CPC分类号： H01L21/02639 , C30B25/04 , C30B29/06 , C30B29/40 , C30B29/52 , H01L21/0237 , H01L21/02538 , H01L21/02642
摘要： A semiconductor structure includes a substrate, a thermally and electrically conductive mask positioned upon the substrate, and an epitaxial lateral over growth (ELOG) material positioned upon the thermally and electrically conductive mask.
摘要翻译： 半导体结构包括衬底，位于衬底上的导热和导电掩模，以及位于导热和导电掩模上的外延横向生长（ELOG）材料。
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9.发明授权Nano-wire optical block devices for amplifying, modulating, and detecting optical signals 有权用于放大，调制和检测光信号的纳米线光学块装置公开(公告)号：US08873893B2
公开(公告)日：2014-10-28
申请号：US13002884
申请日：2008-07-31
IPC分类号： G02F1/01 , H01L31/0352 , H01L31/105 , G02B6/10 , B82Y20/00 , H01S5/34 , H01S5/50 , H01S5/10
CPC分类号： H01S5/341 , B82Y20/00 , G02B6/107 , H01L31/035227 , H01L31/035236 , H01L31/105 , H01S5/10 , H01S5/50 , H01S5/5018 , H01S5/5036
摘要： A nano-wire optical block device for amplifying, modulating, and detecting an optical signal in a large-core hollow metallized waveguide. The nano-wire optical block device comprises a substrate with a plurality of nano-wires coupled to the substrate to form the nano-wire optical block. Each properly formed nano-wire is comprised of a p-doped region, an intrinsic region, and an n-doped region. The nano-wire optical block is operable to be inserted into the large-core hollow metallized waveguide to provide at least one of amplifying, modulating, and detecting the optical signal.
摘要翻译： 一种用于在大芯中空金属化波导中放大，调制和检测光信号的纳米线光学块装置。 纳米线光学块器件包括具有耦合到衬底的多个纳米线以形成纳米线光学块的衬底。 每个正确形成的纳米线由p掺杂区域，本征区域和n掺杂区域组成。 纳米线光学块可操作地插入到大芯中空金属化波导中以提供放大，调制和检测光信号中的至少一个。
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公开(公告)号：US09323217B2
公开(公告)日：2016-04-26
申请号：US13142484
申请日：2008-12-29
申请人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
发明人： Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams , Jingjing Li , Wei Wu , Philip J. Kuekes
CPC分类号： G03H1/02 , G02B1/007 , G03H1/2249 , G03H1/2294 , G03H2001/0224 , G03H2210/30 , G03H2225/22 , G03H2225/32 , G03H2225/33
摘要： A negative index material (or metamaterial) crossbar includes a first layer of approximately parallel nanowires and a second layer of approximately parallel nanowires that overlay the nanowires in the first layer. The nanowires in the first layer are approximately perpendicular in orientation to the nanowires in the second layer. Each nanowire of the first layer and each nanowire of the second layer has substantially regularly spaced fingers. The crossbar further includes resonant elements at nanowire intersections between the respective layers. Each resonant element includes two fingers of a nanowire in the first layer and two fingers of a nanowire in the second layer.
摘要翻译： 负指数材料（或超材料）横杆包括大致平行的纳米线的第一层和覆盖第一层中的纳米线的大致平行的纳米线的第二层。 第一层中的纳米线在第二层中与纳米线的取向近似垂直。 第一层的每个纳米线和第二层的每个纳米线具有基本上规则间隔的指状物。 横杆还包括在各层之间的纳米线交叉处的共振元件。 每个谐振元件包括第一层中的纳米线的两个指状物和第二层中的纳米线的两个指状物。
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