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1.发明申请公开(公告)号：US20220238306A1
公开(公告)日：2022-07-28
申请号：US17718047
申请日：2022-04-11
发明人： Jong-hoon Park , Sukwon Jung , Hyunwoo Joo , Jaihyuk Choi , Kyungjoo Min , Wonwoong Park
IPC分类号： H01J37/32 , C23C16/44 , H01L51/56 , C23C16/505 , C23C16/455 , C23C16/509
摘要： A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate.
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2.发明申请公开(公告)号：US20190019652A1
公开(公告)日：2019-01-17
申请号：US15994486
申请日：2018-05-31
发明人： Jong-hoon Park , Sukwon Jung , Hyunwoo Joo , Jaihyuk Choi , Kyungjoo Min , Wonwoong Park
IPC分类号： H01J37/32 , C23C16/44 , C23C16/505 , H01L51/56
摘要： A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate.
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3.发明授权公开(公告)号：US11302517B2
公开(公告)日：2022-04-12
申请号：US15994486
申请日：2018-05-31
发明人： Jong-hoon Park , Sukwon Jung , Hyunwoo Joo , Jaihyuk Choi , Kyungjoo Min , Wonwoong Park
IPC分类号： H01J37/32 , C23C16/44 , C23C16/505 , H01L51/00 , H01L51/56 , C23C16/455 , C23C16/509 , C23C16/34
摘要： A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate.
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公开(公告)号：US11214870B2
公开(公告)日：2022-01-04
申请号：US15990051
申请日：2018-05-25
发明人： Jaihyuk Choi , Jong-hoon Park , Kyungjoo Min , Wonwoong Park , Sukwon Jung , Hyunwoo Joo , Myungsoo Huh
IPC分类号： C23C16/458 , C23C16/44 , H01J37/32 , C23C16/50 , H01L21/687 , C23C16/509 , C23C16/455 , H01R9/16 , H01R9/00 , H01L21/02
摘要： A chemical vapor deposition (CVD) system may include a chamber, a susceptor provided in the chamber to support a substrate, a gas distribution part provided over the susceptor, a first ground strap bar provided on a bottom inner surface of the chamber and electrically connected to the chamber, a second ground strap bar provided on a bottom surface of the susceptor and electrically connected to the susceptor, and a plurality of ground straps electrically connected to the first and second ground strap bars, each of the plurality of ground straps including two opposite portions that are fastened to the first and second ground strap bars, respectively.
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5.发明授权公开(公告)号：US11842883B2
公开(公告)日：2023-12-12
申请号：US17718047
申请日：2022-04-11
发明人： Jong-hoon Park , Sukwon Jung , Hyunwoo Joo , Jaihyuk Choi , Kyungjoo Min , Wonwoong Park
IPC分类号： H01J37/32 , C23C16/44 , C23C16/505 , C23C16/455 , C23C16/509 , H10K71/00 , C23C16/34 , H10K71/16
CPC分类号： H01J37/32082 , C23C16/4411 , C23C16/4412 , C23C16/45565 , C23C16/505 , C23C16/5096 , H01J37/3244 , H01J37/32091 , H01J37/32458 , H01J37/32467 , H01J37/32568 , H01J37/32577 , H10K71/00 , C23C16/345 , H01J2237/3321 , H10K71/164
摘要： A chemical vapor deposition apparatus includes a chamber, a susceptor supporting a substrate, a backing plate to which power is applied, a diffuser providing a deposition gas, and a first insulator. The first insulator may include a first portion covering a top surface of the backing plate, and a second portion assembled with the first portion and covering a sidewall of the backing plate.
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