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公开(公告)号：US10214808B2
公开(公告)日：2019-02-26
申请号：US15492941
申请日：2017-04-20
发明人： Myung-Soo Huh , Suk-Won Jung , Jeong-Ho Yi , Sang-Hyuk Hong , Yong-Suk Lee
IPC分类号： H01L27/00 , C23C16/04 , C23C16/458 , H01L21/68 , H01L27/32 , H01L21/687 , C23C16/44 , C23C16/50 , C23C16/52 , H01L51/00 , H01L51/56
摘要： A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.
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2.发明授权公开(公告)号：US09318535B2
公开(公告)日：2016-04-19
申请号：US13944847
申请日：2013-07-17
发明人： Suk-Won Jung , Myung-Soo Huh , Choel-Min Jang
IPC分类号： H01L27/32 , C23C16/455 , H01J37/32 , C23C16/44 , C23C16/452 , C23C16/50 , H05H1/24 , H01L51/56
CPC分类号： H01J37/32467 , C23C16/4401 , C23C16/452 , C23C16/45542 , C23C16/45551 , C23C16/50 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01L27/32 , H01L51/56 , H05H1/2406 , H05H2001/2418 , H05H2001/2431
摘要： Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.
摘要翻译： 提供了一种蒸镀装置，其特征在于，包括：等离子体发生器，被配置为将第一原料气体的至少一部分变为自由基形式; 对应于等离子体发生器的对应表面; 等离子体发生器和相应表面之间的反应空间; 以及与等离子体发生器分离并围绕等离子体发生器的绝缘构件。
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公开(公告)号：US09057125B2
公开(公告)日：2015-06-16
申请号：US13710310
申请日：2012-12-10
发明人： Choel-Min Jang , Myung-Soo Huh , Suk-Won Jung , Sung-Yong Lee , Cheol-Rae Jo , In-Kyo Kim , Sung-Hun Key
IPC分类号： B01F3/04 , C23C16/00 , C23C16/448
CPC分类号： C23C16/00 , B01F3/04 , C23C16/4481 , C23C16/4482
摘要： A canister includes an accommodation portion for accommodating a liquid material; an outlet pipe that is connected to the accommodation portion so as to discharge a gas material obtained by vaporizing the liquid material; a blocking cover that is connected to an upper surface of the accommodation portion; and a plurality of baffle plates that are disposed in the accommodation portion and are spaced apart from each other. The canister further includes a restrictor including a main body member that is disposed between the plurality of baffle plates and the blocking cover and is connected to an internal surface of the accommodation portion, an extension member extending from the main body member, and a through portion that is formed through the main body member and the extension member. A deposition procedure using the canister is efficiently performed and characteristics of a deposition layer are easily improved.
摘要翻译： 罐包括用于容纳液体材料的容纳部分; 出口管，其连接到容纳部分，以排出通过汽化液体材料获得的气体材料; 阻挡盖，其连接到所述容纳部的上表面; 以及设置在容纳部分中并彼此间隔开的多个挡板。 所述罐还包括限制器，所述限制器包括主体部件，所述主体部件设置在所述多个挡板和所述阻挡盖之间，并且连接到所述容纳部的内表面，从所述主体部件延伸的延伸部件， 其通过主体构件和延伸构件形成。 可以有效地进行使用罐的沉积工序，容易地提高沉积层的特性。
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公开(公告)号：US20150027371A1
公开(公告)日：2015-01-29
申请号：US14161984
申请日：2014-01-23
发明人： Jin-Kwang Kim , Seung-Yong Song , Myung-Soo Huh , Suk-Won Jung , Choel-Min Jang , Jae-Hyun Kim , Sung-Chul Kim
IPC分类号： C23C16/455
CPC分类号： C23C16/45574 , C23C16/45536 , C23C16/45551
摘要： A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.
摘要翻译： 一种用于在基板上提供沉积膜的气相沉积设备，所述气相沉积设备包括多个第一喷嘴部分，其向所述基板注入第一原料; 多个第二喷嘴部，与所述多个第一喷嘴部交替地配置，向所述基板喷射第二原料; 扩散器单元，其将所述第二原料分配到所述多个第二喷嘴部分; 以及将第二原料供给到扩散器单元的供给单元。
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5.发明申请公开(公告)号：US20140235003A1
公开(公告)日：2014-08-21
申请号：US13944847
申请日：2013-07-17
发明人： Suk-Won Jung , Myung-Soo Huh , Choel-Min Jang
CPC分类号： H01J37/32467 , C23C16/4401 , C23C16/452 , C23C16/45542 , C23C16/45551 , C23C16/50 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01L27/32 , H01L51/56 , H05H1/2406 , H05H2001/2418 , H05H2001/2431
摘要： Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.
摘要翻译： 提供了一种蒸镀装置，其特征在于，包括：等离子体发生器，被配置为将第一原料气体的至少一部分变为自由基形式; 对应于等离子体发生器的对应表面; 等离子体发生器和相应表面之间的反应空间; 以及与等离子体发生器分离并围绕等离子体发生器的绝缘构件。
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6.发明申请VAPOR DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS 有权蒸气沉积装置及制造有机发光显示装置的方法公开(公告)号：US20140134768A1
公开(公告)日：2014-05-15
申请号：US14078422
申请日：2013-11-12
发明人： Cheol-Min Jang , Myung-Soo Huh , Suk-Won Jung , Jae-Hyun Kim , Sung-Chul Kim , Jin-Kwang Kim , Chang-Woo Shim , Sung-Hun Key , In-Kyo Kim
IPC分类号： H01L33/52
CPC分类号： C23C16/45544 , C23C16/403 , C23C16/4412 , C23C16/45519 , C23C16/45563 , H01L27/3244 , H01L51/001 , H01L51/0011 , H01L51/50 , H01L51/56
摘要： A vapor deposition apparatus for depositing a thin film on a substrate, by which a deposition process is efficiently performed and deposition film characteristics are easily improved, and a vapor deposition apparatus including: a stage onto which a substrate is disposed; and a supply unit disposed to face the substrate and having a main body member and a nozzle member disposed on one surface of the main body member facing the substrate, to sequentially supply a plurality of gases towards the substrate, and a method of manufacturing an organic light-emitting display apparatus using the same.
摘要翻译： 一种用于在基板上沉积薄膜的气相沉积设备，通过该气相沉积设备有效地进行沉积工艺并容易地改善沉积膜特性;以及气相沉积设备，包括：设置有基板的平台; 以及供给单元，其配置成面对基板，具有主体部件和喷嘴部件，所述主体部件和喷嘴部件配置在与所述基板相对的所述主体部件的一个表面上，以顺序向所述基板供给多个气体;以及制造有机物的方法 发光显示装置。
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公开(公告)号：US20220380899A1
公开(公告)日：2022-12-01
申请号：US17882967
申请日：2022-08-08
发明人： Jin-Kwang Kim , Seung-Yong Song , Myung-Soo Huh , Suk-Won Jung , Choel-Min Jang , Jae-Hyun Kim , Sung-Chul Kim
IPC分类号： C23C16/455
摘要： A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.
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公开(公告)号：US11408072B2
公开(公告)日：2022-08-09
申请号：US16271189
申请日：2019-02-08
发明人： Jin-Kwang Kim , Seung-Yong Song , Myung-Soo Huh , Suk-Won Jung , Choel-Min Jang , Jae-Hyun Kim , Sung-Chul Kim
IPC分类号： C23C16/455
摘要： A vapor deposition apparatus for providing a deposition film on a substrate, the vapor deposition apparatus includes a plurality of first nozzle parts which injects a first raw material toward the substrate; a plurality of second nozzle parts which is alternately disposed together with the plurality of first nozzle parts and injects a second raw material toward the substrate; a diffuser unit which distributes the second raw material to the plurality of second nozzle parts; and a supply unit which supplies the second raw material to the diffuser unit.
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公开(公告)号：US11101328B2
公开(公告)日：2021-08-24
申请号：US15076488
申请日：2016-03-21
发明人： Suk-Won Jung , Myung-Soo Huh , Choel-Min Jang
IPC分类号： H01J37/32 , C23C16/50 , H05H1/24 , C23C16/509 , C23C16/54 , H01L27/32 , C23C16/44 , C23C16/452 , C23C16/455 , H01L51/56
摘要： Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.
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公开(公告)号：US10446753B2
公开(公告)日：2019-10-15
申请号：US15205815
申请日：2016-07-08
发明人： Jin-Kwang Kim , Seung-Yong Song , Myung-Soo Huh , Suk-Won Jung , Choel-Min Jang , Jae-Hyun Kim , Sung-Chul Kim
IPC分类号： C23C16/44 , H01L51/00 , H01B13/30 , C23C14/24 , C23C14/56 , C23C16/455 , C23C16/50 , H01L51/52 , H01L51/56 , H01L27/32
摘要： A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.
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