公开(公告)号：US20230326985A1

公开(公告)日：2023-10-12

申请号：US18201308

申请日：2023-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ryong HA ,  Dongwoo KIM ,  Gyeom KIM ,  Yong Seung KIM ,  Pankwi PARK ,  Seung Hun LEE

IPC: H01L29/423 ,  H01L29/417 ,  H01L29/10

CPC classification number: H01L29/41758 ,  H01L29/1033 ,  H01L29/42356

Abstract: A semiconductor device including an active pattern extending in a first direction; a channel pattern on the active pattern and including vertically stacked semiconductor patterns; a source/drain pattern in a recess in the active pattern; a gate electrode on the active pattern and extending in a second direction crossing the first direction, the gate electrode surrounding a top surface, at least one side surface, and a bottom surface of each of the semiconductor patterns; and a gate spacer covering a side surface of the gate electrode and having an opening to the semiconductor patterns, wherein the source/drain pattern includes a buffer layer covering inner sides of the recess, the buffer layer includes an outer side surface and an inner side surface, which are opposite to each other, and each of the outer and inner side surfaces is a curved surface that is convexly curved toward a closest gate electrode.

公开(公告)号：US20210098626A1

公开(公告)日：2021-04-01

申请号：US16910819

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bum KIM ,  Gyeom KIM ,  Da Hye KIM ,  Jae Mun KIM ,  Il Gyou SHIN ,  Seung Hun LEE ,  Kyung In CHOI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US20190026012A1

公开(公告)日：2019-01-24

申请号：US16069597

申请日：2016-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun LEE ,  Do Youn KANG ,  Sung Bae PARK ,  Ju Yeon LEE ,  Jung Hwan CHOI

IPC: G06F3/0484 ,  H04M1/725 ,  G06F3/0481

Abstract: The present invention provides a user terminal and a control method of the same, in which a first object is easily changed into a second object by moving to an edge region on a screen. The user terminal includes: an image processor configured to process an image; a display configured to display the processed image; and a controller configured to control the image processor so that a first object included in the image can be moved to an edge region on a screen of the display in response to a user's input for moving the first object to the edge region on the screen of the display, and the first object can be changed into a second object smaller than the first object and displayed on the display.

公开(公告)号：US20240055482A1

公开(公告)日：2024-02-15

申请号：US18193758

申请日：2023-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok Hyeon YOON ,  Kyo-Wook LEE ,  Seung Hun LEE ,  Seung Han PARK

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/786 ,  H01L23/48 ,  H01L29/66 ,  H01L29/775 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/78696 ,  H01L23/481 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/42392 ,  H01L29/41733

Abstract: A semiconductor device including: first and second cell regions; a substrate including first and second surfaces; first to third active patterns extending in a first horizontal direction in the first cell region, the first to third active patterns spaced apart from each other in a second horizontal direction; a fourth active pattern extending in the first horizontal direction in the second cell region, the fourth active pattern is aligned with the second active pattern in the first horizontal direction; an active cut separating the second and fourth active patterns; a source/drain region on the second active pattern; a buried rail extending in the first horizontal direction on the second surface of the substrate, the first buried rail overlaps each of the second and fourth active patterns in a vertical direction; and a source/drain contact penetrating the substrate and second active pattern and connecting the source/drain region to the buried rail.

公开(公告)号：US20230246029A1

公开(公告)日：2023-08-03

申请号：US18133156

申请日：2023-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin KIM ,  Jihye LEE ,  Sangmoon LEE ,  Seung Hun LEE

IPC: H01L27/092 ,  H01L29/161

CPC classification number: H01L27/092 ,  H01L29/161

Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

公开(公告)号：US20220069078A1

公开(公告)日：2022-03-03

申请号：US17242823

申请日：2021-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haejun YU ,  Kyungin CHOI ,  Seung Hun LEE

IPC: H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes an active pattern on a substrate, a source/drain pattern on the active pattern, a channel pattern connected to the source/drain pattern, the channel pattern including semiconductor patterns stacked and spaced apart from each other, a gate electrode extending across the channel pattern, and inner spacers between the gate electrode and the source/drain pattern. The semiconductor patterns include stacked first and second semiconductor patterns. The gate electrode includes first and second portions, which are sequentially stacked between the substrate and the first and second semiconductor patterns, respectively. The inner spacers include first and second air gaps, between the first and second portions of the gate electrode and the source/drain pattern. The largest width of the first air gap is larger than that of the second air gap.

公开(公告)号：US20200185539A1

公开(公告)日：2020-06-11

申请号：US16793162

申请日：2020-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/08

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20200173086A1

公开(公告)日：2020-06-04

申请号：US16699434

申请日：2019-11-29

Applicant: Samsung Electronics Co., Ltd

Inventor： Seung Hun LEE ,  Jun Hyun PARK

IPC: D06F33/00 ,  D06F37/36 ,  H02P1/46 ,  D06F37/30 ,  D06F37/40 ,  H02M1/42 ,  H02P6/08

Abstract: A washing machine including a rotating tub and a motor applying a driving force to the rotating tub. The washing machine configured to generate a starting current to be applied to the motor when it is a start time of the motor, accelerate the speed of the motor stepwise while the starting current is applied to the motor, check a current of a torque component when it is determined as a deceleration time or a stop time, and apply a current of a magnetic flux component greater than the magnitude of the current of the checked torque component to the motor.

公开(公告)号：US20200027895A1

公开(公告)日：2020-01-23

申请号：US16272265

申请日：2019-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Namkyu Edward CHO ,  Seok Hoon KIM ,  Myung II KANG ,  Geo Myung SHIN ,  Seung Hun LEE ,  Jeong Yun LEE ,  Min Hee CHOI ,  Jeong Min CHOI

IPC: H01L27/11582 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768

Abstract: A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.

公开(公告)号：US20200020773A1

公开(公告)日：2020-01-16

申请号：US16452668

申请日：2019-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Hee CHOI ,  Seokhoon KIM ,  Choeun LEE ,  Edward Namkyu CHO ,  Seung Hun LEE

IPC: H01L29/08 ,  H01L27/11 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/417 ,  H01L29/78

Abstract: A semiconductor device including a substrate including an active pattern; a gate electrode crossing the active pattern; a source/drain pattern adjacent to one side of the gate electrode and on an upper portion of the active pattern; an active contact electrically connected to the source/drain pattern; and a silicide layer between the source/drain pattern and the active contact, the source/drain pattern including a body part including a plurality of semiconductor patterns; and a capping pattern on the body part, the body part has a first facet, a second facet on the first facet, and a corner edge defined where the first facet meets the second facet, the corner edge extending parallel to the substrate, the capping pattern covers the second facet of the body part and exposes the corner edge, and the silicide layer covers a top surface of the body part and a top surface of the capping pattern.