SEMICONDUCTOR LIGHT EMITTING DEVICE

    公开(公告)号:US20230047372A1

    公开(公告)日:2023-02-16

    申请号:US17711165

    申请日:2022-04-01

    摘要: A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE ASSEMBLY INCLUDING THE SAME

    公开(公告)号:US20230253535A1

    公开(公告)日:2023-08-10

    申请号:US17979463

    申请日:2022-11-02

    摘要: Provided is a semiconductor light emitting device including a base layer, a light emitting structure including a first semiconductor layer having a first conductivity, an active layer, and a second semiconductor layer having a second conductivity different from the first conductivity, a wavelength converting layer on the light emitting structure, a separation wall disposed adjacent to side surfaces of the wavelength converting layer, a first electrode metal layer on a lower surface of the first semiconductor layer, the first electrode metal layer including a reflection structure, and a second electrode metal layer electrically connected to the second semiconductor layer via through holes penetrating the first electrode metal layer, the first semiconductor layer, and the active layer, and exposing the second semiconductor layer, wherein the semiconductor light emitting device is configured to implement gradation in a first direction based on adjusting at least one of the light emitting structure on an upper surface of the second semiconductor layer, the reflection structure, the separation wall, and a structure included in the light emitting structure..

    SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME

    公开(公告)号:US20220199679A1

    公开(公告)日:2022-06-23

    申请号:US17542720

    申请日:2021-12-06

    IPC分类号: H01L27/15

    摘要: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a plurality of light emitting structures, each of which includes a first surface and a second surface, a plurality of embossed portions provided on the first surface; a partition wall structure provided on the first surface of the plurality of light emitting structures and including a plurality of partition walls which define a plurality of pixel spaces; and a fluorescent layer provided in the plurality of pixel spaces. A bottom surface of the partition wall structure contacts the plurality of embossed portions.