公开(公告)号：US11664242B2

公开(公告)日：2023-05-30

申请号：US17381246

申请日：2021-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin Yoo ,  Min Hyoung Kim ,  Sang Ki Nam ,  Won Hyuk Jang ,  Kyu Hee Han ,  Young Do Kim ,  Jeong Min Bang

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32568 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67253 ,  H01J2237/335 ,  H01L21/02068

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

公开(公告)号：US10410874B2

公开(公告)日：2019-09-10

申请号：US15867082

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Sang Ki Nam ,  Kwang-Youb Heo ,  Jehun Woo ,  Sang-Heon Lee ,  Masahiko Tomita ,  Vasily Pashkovskiy

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

公开(公告)号：US20190035606A1

公开(公告)日：2019-01-31

申请号：US15867082

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Sang Ki Nam ,  Kwang-Youb Heo ,  Jehun Woo ,  Sang-Heon Lee ,  Masahiko Tomita ,  Vasily Pashkovskiy

IPC: H01J37/32 ,  H01L21/027 ,  H01L21/67 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

Abstract: In a plasma processing method, a substrate is loaded onto a substrate electrode within a chamber, the substrate having an object layer to be etched thereon. A plasma generating power output is applied to form plasma within the chamber. A first bias power output is applied to the substrate electrode to perform a first etch stage on the object layer. A second bias power output having a nonsinusoidal voltage waveform is applied to the substrate electrode to perform a second etch stage on the object layer.

公开(公告)号：US11545372B2

公开(公告)日：2023-01-03

申请号：US16421473

申请日：2019-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin Yoo ,  Min Hyoung Kim ,  Sang Ki Nam ,  Lu Siqing ,  Won Hyuk Jang ,  Kyu Hee Han

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/10

Abstract: A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.

公开(公告)号：US11107705B2

公开(公告)日：2021-08-31

申请号：US16505488

申请日：2019-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin Yoo ,  Min Hyoung Kim ,  Sang Ki Nam ,  Won Hyuk Jang ,  Kyu Hee Han ,  Young Do Kim ,  Jeong Min Bang

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/02

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.