公开(公告)号：US09508898B2

公开(公告)日：2016-11-29

申请号：US14838322

申请日：2015-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Kyu Chung ,  Jung Sub Kim ,  Soo Jeong Choi ,  Yeon Woo Seo ,  Dong Gun Lee

IPC: H01L29/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/12 ,  H01L33/18 ,  H01L33/08 ,  H01L33/06

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/18 ,  H01L33/32 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.

Abstract translation: 提供一种纳米结构半导体发光器件，包括：由第一导电型氮化物半导体形成的基极层; 以及多个发光纳米结构，其设置成在所述基底层上彼此间隔开，其中所述多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔; 应力控制层，设置在所述纳米孔的表面上，并且包括含有铟的氮化物半导体; 设置在应力控制层上的有源层; 设置在有源层上的第二导电型氮化物半导体层; 以及缺陷阻挡层，其设置在所述应力控制层的至少一部分上，并且包括具有低于所述应力控制层的晶格常数的晶格常数的氮化物半导体层。

公开(公告)号：US09362448B2

公开(公告)日：2016-06-07

申请号：US14686619

申请日：2015-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Jeong Choi ,  Jung Sub Kim ,  Byung Kyu Chung ,  Yeon Woo Seo ,  Dong Gun Lee

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/32 ,  H01L33/12 ,  H05B33/08

CPC classification number: H01L33/06 ,  H01L27/15 ,  H01L33/0025 ,  H01L33/08 ,  H01L33/12 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H05B33/0803 ,  H05B33/0845 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: There is provided a nanostructure semiconductor light emitting device including a base layer formed of a first conductivity-type nitride semiconductor and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer. Each of the plurality of light emitting nanostructures includes a nanocore formed of the first conductivity-type nitride semiconductor, a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium, an active layer disposed on the stress control layer and including a nitride semiconductor containing indium, and a second conductivity-type nitride semiconductor layer disposed on the active layer.

Abstract translation: 提供一种纳米结构半导体发光器件，其包括由第一导电型氮化物半导体形成的基极层和多个发光纳米结构，所述多个发光纳米结构被设置为在基底层上彼此间隔开。 多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔，设置在纳米孔的表面上的应力控制层，并且包括含有铟的氮化物半导体，设置在应力控制层上的有源层和 包括含有铟的氮化物半导体和设置在有源层上的第二导电型氮化物半导体层。

公开(公告)号：US09748438B2

公开(公告)日：2017-08-29

申请号：US15190406

申请日：2016-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Sub Kim ,  Yeon Woo Seo ,  Dong Gun Lee ,  Byung Kyu Chung ,  Dae Myung Chun ,  Soo Jeong Choi

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/52 ,  B82Y20/00

CPC classification number: H01L33/007 ,  B82Y20/00 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.