公开(公告)号：US20190355825A1

公开(公告)日：2019-11-21

申请号：US16214537

申请日：2018-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong Hyuk YIM ,  Kug Hwan KIM ,  Wan Don KIM ,  Jung Min PARK ,  Jong Ho PARK ,  Byoung Hoon LEE ,  Yong Ho HA ,  Sang Jin HYUN ,  Hye Ri HONG

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/49 ,  H01L29/78 ,  H01L27/092

Abstract: A semiconductor device according to an example embodiment of the present inventive concept includes a substrate having a first region and a second region horizontally separate from the first region; a first gate line in the first region, the first gate line including a first lower work function layer and a first upper work function layer disposed on the first lower work function layer; and a second gate line including a second lower work function layer in the second region, the second gate line having a width in a first, horizontal direction equal to or narrower than a width of the first gate line in the first direction, wherein an uppermost end of the first upper work function layer and an uppermost end of the second lower work function layer are each located at a vertical level higher than an uppermost end of the first lower work function layer with respect to a second direction perpendicular to the first direction.

公开(公告)号：US20210119058A1

公开(公告)日：2021-04-22

申请号：US17114598

申请日：2020-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Ho PARK ,  Wan Don KIM ,  Weon Hong KIM ,  Hyeon Jun BAEK ,  Byoung Hoon LEE ,  Jeong Hyuk YIM ,  Sang Jin HYUN

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L27/088

Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

公开(公告)号：US20180350983A1

公开(公告)日：2018-12-06

申请号：US16100804

申请日：2018-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Keun CHUNG ,  Jong Ho PARK ,  Seung Ha OH ,  Sang Yong KIM ,  Hoon Joo NA ,  Sang Jin HYUN

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/51 ,  H01L21/324 ,  H01L29/06 ,  H01L21/283

CPC classification number: H01L29/7831 ,  B82Y10/00 ,  H01L21/283 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/511 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/66484 ,  H01L29/66666 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/78696

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in first and second regions, respectively, wherein the first gate stack structure is formed adjacent a first channel region and comprises a first gate insulating film having a first thickness formed on the first channel region, a first function film having a second thickness formed on the first gate insulating film and a first filling film having a third thickness formed on the first function film, wherein the second gate stack structure is formed adjacent a second channel region and comprises a second gate insulating film having the first thickness formed on the second channel region, a second function film having the second thickness formed on the second gate insulating film and a second filling film having the third thickness formed on the second function film, wherein the first and second function films, respectively, comprise TiN and Si concentrations that are different from each other.

公开(公告)号：US20220165861A1

公开(公告)日：2022-05-26

申请号：US17669859

申请日：2022-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoung Hoon LEE ,  Wan Don KIM ,  Jong Ho PARK ,  Sang Jin HYUN

IPC: H01L29/51 ,  H01L29/786 ,  H01L29/49 ,  H01L29/775 ,  H01L29/423

Abstract: A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

公开(公告)号：US20210391199A1

公开(公告)日：2021-12-16

申请号：US17200981

申请日：2021-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Young OH ,  Seung Hwan KIM ,  Jong Ho PARK ,  Yong Kwan LEE ,  Jong Ho LEE

IPC: H01L21/673

Abstract: The present disclosure provides a magazine supporting equipment for supporting a magazine with multiple input ports. The magazine supporting equipment comprises a contact plate, a first sidewall plate, and a second sidewall plate. The contact plate is in contact with the magazine. The first sidewall plate extends vertically from one end of the contact plate. The second sidewall plate parallel is to the first sidewall plate and extends vertically from one end to the other end of the contact plate. The first sidewall plate extends along at least a part of a first sidewall of the magazine. The second sidewall plate extends along at least a part of a second sidewall of the magazine. The first sidewall plate and the second sidewall plate include control openings through which gas flows in and out.

公开(公告)号：US20180130905A1

公开(公告)日：2018-05-10

申请号：US15620631

申请日：2017-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won Keun CHUNG ,  Jong Ho PARK ,  Seung Ha OH ,  Sang Yong KIM ,  Hoon Joo NA ,  Sang Jin HYUN

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423 ,  H01L21/324 ,  H01L21/283

CPC classification number: H01L29/7831 ,  B82Y10/00 ,  H01L21/283 ,  H01L21/324 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/511 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/66484 ,  H01L29/66666 ,  H01L29/775 ,  H01L29/7827 ,  H01L29/78696

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in first and second regions, respectively, wherein the first gate stack structure is formed adjacent a first channel region and comprises a first gate insulating film having a first thickness formed on the first channel region, a first function film having a second thickness formed on the first gate insulating film and a first filling film having a third thickness formed on the first function film, wherein the second gate stack structure is formed adjacent a second channel region and comprises a second gate insulating film having the first thickness formed on the second channel region, a second function film having the second thickness formed on the second gate insulating film and a second filling film having the third thickness formed on the second function film, wherein the first and second function films, respectively, comprise TiN and Si concentrations that are different from each other.

公开(公告)号：US20160066326A1

公开(公告)日：2016-03-03

申请号：US14843214

申请日：2015-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Mu CHOI ,  Keum Youn KWON ,  Ki Ho CHO ,  Ju Ah LEE ,  Jong Ho PARK ,  Young Jae CHOI

IPC: H04W72/04 ,  H04W24/04 ,  H04W68/02

CPC classification number: H04W72/0453 ,  H04B1/005 ,  H04W24/04 ,  H04W36/06 ,  H04W76/15 ,  H04W84/12

Abstract: An electronic device and a communication channel management method are provided. The electronic device includes a communication interface including a plurality of communication modules or configured to support a plurality of channel bands in one communication module, and a processor configured to establish a second communication channel based on another frequency band that an access point supports according to a specified condition if another frequency band connection of the same access point is available when establishing a first communication channel with the access point based on a specified frequency band.

Abstract translation: 提供电子设备和通信信道管理方法。 电子设备包括包括多个通信模块或被配置为在一个通信模块中支持多个信道频带的通信接口，以及被配置为基于接入点支持的根据另一个频带建立第二通信信道的处理器 当与基于指定频带的接入点建立第一通信信道时，相同接入点的另一频带连接可用时，指定条件。

公开(公告)号：US20150209962A1

公开(公告)日：2015-07-30

申请号：US14679127

申请日：2015-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soon Hyuk HONG ,  Gi Oh KIM ,  Jong Ho PARK ,  Ji Hyun PARK ,  Seung Hyun BAEK

IPC: B25J9/16

CPC classification number: B25J9/1689 ,  G05B2219/40161 ,  G05B2219/40165

Abstract: A user interface device of a remote control system for a robot and a method using the same are provided. The user interface device includes: a radio frequency (RF) unit for receiving, from a remote control robot, camera data and at least one sensor data detecting a distance; a display unit having a main screen and at least one auxiliary screen; and a controller having an environment evaluation module for determining whether the received camera data are in a normal condition, and having a screen display mode change module for displaying, if the received camera data are in a normal condition, the camera data on the main screen and displaying, if the received camera data are in an abnormal condition, the sensor data on the main screen.