公开(公告)号：US11581269B2

公开(公告)日：2023-02-14

申请号：US16868745

申请日：2020-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwan Park ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang ,  Injun Hwang

IPC: H01L23/00 ,  H01L29/15 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

Abstract: A semiconductor thin film structure may include a substrate, a buffer layer on the substrate, and a semiconductor layer on the buffer layer, such that the buffer layer is between the semiconductor layer and the substrate. The buffer layer may include a plurality of unit layers. Each unit layer of the plurality of unit layers may include a first layer having first bandgap energy and a first thickness, a second layer having second bandgap energy and a second thickness, and a third layer having third bandgap energy and a third thickness. One layer having a lowest bandgap energy of the first, second, and third layers of the unit layer may be between another two layers of the first, second, and third layers of the unit layer.

公开(公告)号：US20230238484A1

公开(公告)日：2023-07-27

申请号：US17967318

申请日：2022-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghwan Park ,  Joosung Kim ,  Dongchul Shin ,  Junhee Choi

IPC: H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/20 ,  H01L33/325 ,  H01L33/382 ,  H01L33/0075 ,  H01L27/156

Abstract: Provided are nanorod light emitting diodes (LEDs), display apparatuses, and manufacturing methods thereof. The nanorod LED includes a first-type semiconductor layer including a body and a pyramidal structure continuously provided from the body, a nitride light emitting layer provided on the pyramidal structure, and a second-type semiconductor layer provided in the nitride light emitting layer.

公开(公告)号：US11588046B2

公开(公告)日：2023-02-21

申请号：US17386729

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongchul Shin ,  Boram Kim ,  Younghwan Park ,  Jongseob Kim ,  Joonyong Kim ,  Junhyuk Park ,  Jaejoon Oh ,  Minchul Yu ,  Soogine Chong ,  Sunkyu Hwang ,  Injun Hwang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20

Abstract: A high electron mobility transistor (HEMT) includes a channel layer, a plurality of barrier layers, and a p-type semiconductor layer. The barrier layers have an energy band gap greater than that of the channel layer. A gate electrode is arranged on the p-type semiconductor layer. A source electrode and a drain electrode are apart from the p-type semiconductor layer and the gate electrode on the barrier layers. Impurity concentrations of the barrier layers are different from each other in a drift area between the source electrode and the drain electrode.

公开(公告)号：US20250031491A1

公开(公告)日：2025-01-23

申请号：US18540513

申请日：2023-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongchul Shin ,  Joosung Kim ,  Junghun Park

IPC: H01L33/32 ,  H01L25/075 ,  H01L33/00 ,  H01L33/04

Abstract: A light-emitting device includes a base semiconductor layer, at least one core provided on the base semiconductor layer, the at least one core including a body portion extending in a first direction and a shielding portion provided at an upper end of the body portion, where a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the body portion in the second direction, a first insulating layer provided on an upper surface of the base semiconductor layer and an upper surface of the shielding portion, and at least one light-emitting portion provided on a side surface of the body portion.

公开(公告)号：US11888059B2

公开(公告)日：2024-01-30

申请号：US17349327

申请日：2021-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC: H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1033 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831

Abstract: Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US11069802B2

公开(公告)日：2021-07-20

申请号：US16703128

申请日：2019-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injun Hwang ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Sunkyu Hwang

IPC: H01L29/78 ,  H01L29/20 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40

Abstract: Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.

公开(公告)号：US12002879B2

公开(公告)日：2024-06-04

申请号：US17098896

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunkyu Hwang ,  Joonyong Kim ,  Jongseob Kim ,  Junhyuk Park ,  Boram Kim ,  Younghwan Park ,  Dongchul Shin ,  Jaejoon Oh ,  Soogine Chong ,  Injun Hwang

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/66462 ,  H01L29/7787

Abstract: Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.

公开(公告)号：US11837642B2

公开(公告)日：2023-12-05

申请号：US17016877

申请日：2020-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soogine Chong ,  Jongseob Kim ,  Joonyong Kim ,  Younghwan Park ,  Junhyuk Park ,  Dongchul Shin ,  Jaejoon Oh ,  Sunkyu Hwang ,  Injun Hwang

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/285 ,  H01L21/765 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/42316 ,  H01L21/022 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/28587 ,  H01L21/765 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor device includes a channel layer including a channel; a channel supply layer on the channel layer; a channel separation pattern on the channel supply layer; a gate electrode pattern on the channel separation pattern; and an electric-field relaxation pattern protruding from a first lateral surface of the gate electrode pattern in a first direction parallel with an upper surface of the channel layer. An interface between the channel layer and the channel supply layer is adjacent to channel. A size of the gate electrode pattern in the first direction is different from a size of the channel separation pattern in the first direction. The gate electrode pattern and the electric-field relaxation pattern form a single structure.

公开(公告)号：US20230143907A1

公开(公告)日：2023-05-11

申请号：US17720872

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Joosung Kim ,  Younghwan Park ,  Junghun Park ,  Dongchul Shin ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/04 ,  H01L27/15 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/24 ,  H01L33/44

Abstract: Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.