公开(公告)号：US09349879B2

公开(公告)日：2016-05-24

申请号：US14554859

申请日：2014-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Hyung Kim ,  Chang-Seok Kang ,  Sung-Il Chang ,  Jung-Dal Choi

IPC: H01L29/788 ,  H01L29/792 ,  H01L27/115 ,  H01L29/66 ,  H01L29/423 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11529 ,  H01L27/11563 ,  H01L27/11568 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/7883

Abstract: A non-volatile memory device may include a semiconductor substrate and an isolation layer on the semiconductor substrate wherein the isolation layer defines an active region of the semiconductor substrate. A tunnel insulation layer may be provided on the active region of the semiconductor substrate, and a charge storage pattern may be provided on the tunnel insulation layer. An interface layer pattern may be provided on the charge storage pattern, and a blocking insulation pattern may be provided on the interface layer pattern. Moreover, the block insulation pattern may include a high-k dielectric material, and the interface layer pattern and the blocking insulation pattern may include different materials. A control gate electrode may be provided on the blocking insulating layer so that the blocking insulation pattern is between the interface layer pattern and the control gate electrode. Related methods are also discussed.

Abstract translation: 非易失性存储器件可以包括半导体衬底和半导体衬底上的隔离层，其中隔离层限定半导体衬底的有源区。 可以在半导体衬底的有源区上设置隧道绝缘层，并且可以在隧道绝缘层上设置电荷存储图案。 可以在电荷存储图案上提供界面层图案，并且可以在界面层图案上提供阻挡绝缘图案。 此外，块绝缘图案可以包括高k介电材料，并且界面层图案和阻挡绝缘图案可以包括不同的材料。 可以在阻挡绝缘层上设置控制栅电极，使得阻挡绝缘图案位于界面层图案和控制栅电极之间。 还讨论了相关方法。

公开(公告)号：US20140183615A1

公开(公告)日：2014-07-03

申请号：US14163228

申请日：2014-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Hyung Kim ,  Sung-II CHANG ,  Chang-Seok KANG ,  Jung-Dal CHOI

IPC: H01L29/788 ,  H01L29/792

CPC classification number: H01L29/792 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11529 ,  H01L27/11563 ,  H01L27/11568 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/42348 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/7883

Abstract: A non-volatile memory device may include a semiconductor substrate and an isolation layer on the semiconductor substrate wherein the isolation layer defines an active region of the semiconductor substrate. A tunnel insulation layer may be provided on the active region of the semiconductor substrate, and a charge storage pattern may be provided on the tunnel insulation layer. An interface layer pattern may be provided on the charge storage pattern, and a blocking insulation pattern may be provided on the interface layer pattern. Moreover, the block insulation pattern may include a high-k dielectric material, and the interface layer pattern and the blocking insulation pattern may include different materials. A control gate electrode may be provided on the blocking insulating layer so that the blocking insulation pattern is between the interface layer pattern and the control gate electrode. Related methods are also discussed.

Abstract translation: 非易失性存储器件可以包括半导体衬底和半导体衬底上的隔离层，其中隔离层限定半导体衬底的有源区。 可以在半导体衬底的有源区上设置隧道绝缘层，并且可以在隧道绝缘层上设置电荷存储图案。 可以在电荷存储图案上提供界面层图案，并且可以在界面层图案上提供阻挡绝缘图案。 此外，块绝缘图案可以包括高k介电材料，并且界面层图案和阻挡绝缘图案可以包括不同的材料。 可以在阻挡绝缘层上设置控制栅电极，使得阻挡绝缘图案位于界面层图案和控制栅电极之间。 还讨论了相关方法。