公开(公告)号：US09685498B2

公开(公告)日：2017-06-20

申请号：US15201704

申请日：2016-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeol Kang ,  Suk-Jin Chung ,  Youn-Soo Kim ,  Jae-Hyoung Choi ,  Jae-Soon Lim ,  Min-Young Park

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L27/108 ,  H01L29/78

CPC classification number: H01L28/60 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

Abstract: To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.

公开(公告)号：US09716094B2

公开(公告)日：2017-07-25

申请号：US15229424

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Yeol Kang ,  Ki-Vin Im ,  Youn-Soo Kim ,  Han-Jin Lim

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10805 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/90

Abstract: A semiconductor device having a capacitor includes a substrate which has a transistor, a first insulating pattern which is formed on the substrate and does not overlap a first contact node formed in the substrate, a second insulating pattern which is formed on the substrate, does not overlap a second contact node formed in the substrate, and is separated from the first insulating pattern, a first lower electrode which is formed on part of the substrate and sidewalls of the first insulating pattern, a second lower electrode which is formed on part of the substrate and sidewalls of the second insulating pattern, a dielectric layer pattern which is formed on the first lower electrode and the second lower electrode, and an upper electrode which is formed on the dielectric layer pattern. Related fabrication methods are also discussed.

公开(公告)号：US20170098652A1

公开(公告)日：2017-04-06

申请号：US15229424

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Yeol Kang ,  Ki-Vin Im ,  Youn-Soo Kim ,  Han-Jin Lim

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10805 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/90

Abstract: A semiconductor device having a capacitor includes a substrate which has a transistor, a first insulating pattern which is formed on the substrate and does not overlap a first contact node formed in the substrate, a second insulating pattern which is formed on the substrate, does not overlap a second contact node formed in the substrate, and is separated from the first insulating pattern, a first lower electrode which is formed on part of the substrate and sidewalls of the first insulating pattern, a second lower electrode which is formed on part of the substrate and sidewalls of the second insulating pattern, a dielectric layer pattern which is formed on the first lower electrode and the second lower electrode, and an upper electrode which is formed on the dielectric layer pattern. Related fabrication methods are also discussed.

公开(公告)号：US11705483B2

公开(公告)日：2023-07-18

申请号：US17366115

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Sun Kim ,  Sang-Yeol Kang ,  Kyoo-Ho Jung ,  Kyu-Ho Cho ,  Hyo-Sik Mun

IPC: H01L27/108 ,  H01G4/10 ,  H01L49/02 ,  H01G4/008 ,  H10B12/00

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/10 ,  H10B12/315

Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.

公开(公告)号：US11088240B2

公开(公告)日：2021-08-10

申请号：US16445011

申请日：2019-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Sun Kim ,  Sang-Yeol Kang ,  Kyoo-Ho Jung ,  Kyu-Ho Cho ,  Hyo-Sik Mun

IPC: H01L27/00 ,  H01G4/10 ,  H01L49/02 ,  H01G4/008 ,  H01L27/108

Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.