公开(公告)号：US11648594B2

公开(公告)日：2023-05-16

申请号：US16890490

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Min Shin ,  Hun Jae Jang ,  Seok Hoon Kim ,  Young-Hoo Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC: B08B7/00 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687 ,  H01L21/311

CPC classification number: B08B7/0042 ,  B08B3/10 ,  B08B7/0064 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/67098 ,  H01L21/67248 ,  H01L21/68764

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

公开(公告)号：US20220084812A1

公开(公告)日：2022-03-17

申请号：US17318629

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Park ,  Seo Hyun Kim ,  Seung Ho Kim ,  Young Chan Kim ,  Young-Hoo Kim ,  Tae-Hong Kim ,  Hyun Woo Nho ,  Seung Min Shin ,  Kun Tack Lee ,  Hun Jae Jang

IPC: H01L21/02 ,  H01L21/67 ,  G03F7/30 ,  G03F7/20

Abstract: A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

公开(公告)号：US20230131222A1

公开(公告)日：2023-04-27

申请号：US17876266

申请日：2022-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hae Won CHOI ,  Seung Min Shin ,  Sang Jine Park ,  Jae Won Shin ,  Ji Hwan Park ,  Kun Tack Lee ,  Koriakin Anton ,  Joon Ho Won ,  Pil Kyun Heo

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.

公开(公告)号：US11631599B2

公开(公告)日：2023-04-18

申请号：US16683753

申请日：2019-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon Cha ,  Jinwoo Lee ,  Seok Hoon Kim ,  In Gi Kim ,  Seung Min Shin ,  Yong Jun Choi

IPC: H01L21/67 ,  H01L21/687

Abstract: An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.

公开(公告)号：US11605545B2

公开(公告)日：2023-03-14

申请号：US16692051

申请日：2019-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hun Jae Jang ,  Seung Min Shin ,  Seok Hoon Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Jinwoo Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC: H01L21/67 ,  B08B7/00

Abstract: A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.

公开(公告)号：US11581182B2

公开(公告)日：2023-02-14

申请号：US17478619

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun Cho ,  Young Hoo Kim ,  Seung Min Shin ,  Tae Min Earmme ,  Kun Tack Lee ,  Hun Jae Jang ,  Eun Hee Jeang

IPC: H01L21/02 ,  B08B3/08 ,  H01L21/428 ,  H01L21/687

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

公开(公告)号：US20200335361A1

公开(公告)日：2020-10-22

申请号：US16692051

申请日：2019-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hun Jae JANG ,  Seung Min Shin ,  Seok Hoon Kim ,  In Gi Kim ,  Tae-Hong Kim ,  Kun Tack Lee ,  Jinwoo Lee ,  Ji Hoon Cha ,  Yong Jun Choi

IPC: H01L21/67 ,  B08B7/00

Abstract: A wafer cleaning equipment includes a housing to be positioned adjacent to a wafer, a hollow region in the housing, a laser module that outputs a laser beam having a profile of the laser beam includes a first region having a first intensity and a second region having a second intensity greater than the first intensity, the laser beam being output into the hollow region, and a transparent window that covers an upper part of the hollow region and transmits the laser beam to be incident on an entirety of a lower surface of the wafer.

公开(公告)号：US20200075359A1

公开(公告)日：2020-03-05

申请号：US16376749

申请日：2019-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN WOO LEE ,  Yong Jun Choi ,  Seok Hoon Kim ,  Seung Min Shin ,  Ji Hoon Cha

IPC: H01L21/67

Abstract: A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.

公开(公告)号：US12165866B2

公开(公告)日：2024-12-10

申请号：US17318629

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun Park ,  Seo Hyun Kim ,  Seung Ho Kim ,  Young Chan Kim ,  Young-Hoo Kim ,  Tae-Hong Kim ,  Hyun Woo Nho ,  Seung Min Shin ,  Kun Tack Lee ,  Hun Jae Jang

IPC: H01L21/02 ,  H01L21/67 ,  G03F7/00 ,  G03F7/30

Abstract: A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

公开(公告)号：US12100602B2

公开(公告)日：2024-09-24

申请号：US17807374

申请日：2022-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Woo Lee ,  Yong Jun Choi ,  Seok Hoon Kim ,  Seung Min Shin ,  Ji Hoon Cha

IPC: H01L21/67

CPC classification number: H01L21/67086 ,  H01L21/67115 ,  H01L21/67253

Abstract: A wet etching apparatus includes a process bath having an internal space configured to receive an etchant and having a support unit, on which a wafer is disposed to be in contact with the etchant. A laser unit is disposed above the process bath and is configured to direct a laser beam to the wafer and to heat the wafer thereby. An etchant supply unit is configured to supply the etchant to the internal space of the process bath.