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公开(公告)号:US20230420469A1
公开(公告)日:2023-12-28
申请号:US18141295
申请日:2023-04-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunjae Kim
IPC: H01L27/146 , H01L23/544
CPC classification number: H01L27/14618 , H01L27/14645 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14634 , H01L27/14685 , H01L27/1469 , H01L27/14698 , H01L23/544 , H01L2223/5446
Abstract: Provided is a method of manufacturing an image sensor package, the method including preparing a device wafer including a plurality of chip portions and a scribe lane, forming a redistribution insulating film on a lower surface of the device wafer to cover a redistribution pattern and a portion of the redistribution pattern and to cover a lower surface of the device wafer, forming a redistribution pattern on a lower surface of the device wafer and a redistribution insulating film to cover a portion of the redistribution pattern and to cover a lower surface of the device wafer, placing a preliminary transparent substrate on an upper surface of the device wafer on which the preliminary dam pattern is formed, performing a laser bonding process of radiating a laser beam to the preliminary dam pattern, and performing a singulation process forming individual image sensor packages.
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公开(公告)号:US20240055403A1
公开(公告)日:2024-02-15
申请号:US18136499
申请日:2023-04-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Changeun Joo , Ohguk Kwon , Sunjae Kim
IPC: H01L25/065 , H01L23/538 , H01L23/31 , H01L23/48 , H01L23/00
CPC classification number: H01L25/0657 , H01L23/5383 , H01L23/3128 , H01L23/481 , H01L24/32 , H01L24/16 , H01L24/73 , H01L2225/06568 , H01L2224/32145 , H01L2224/16146 , H01L2224/16227 , H01L2224/73253
Abstract: A semiconductor package may include a first redistribution substrate, a second redistribution substrate on the first redistribution substrate, a chip stack between the first redistribution substrate and the second redistribution substrate, a first molding layer on the chip stack, and a through electrode extending into the first molding layer and electrically connecting the first redistribution substrate to the second redistribution substrate. The chip stack may include a first semiconductor chip on the first redistribution substrate, the first semiconductor chip including a through via that extends therein, a chip structure including a second semiconductor chip and a second molding layer, the second semiconductor chip being on the first semiconductor chip and electrically connected to the through via, and a third semiconductor chip between the chip structure and the second redistribution substrate, and a side surface of the first semiconductor chip may be coplanar with a side surface of the chip structure.
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公开(公告)号:US20250069960A1
公开(公告)日:2025-02-27
申请号:US18799115
申请日:2024-08-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunjae Kim
Abstract: A semiconductor package includes a first semiconductor chip having a chip mounting region on a central portion thereof and a test region surrounding the chip mounting region; a plurality of first measurement structures on the test region and sequentially arranged to be spaced apart from an edge of the chip mounting region; a second semiconductor chip mounted on the chip mounting region of the first semiconductor chip via a plurality of conductive bumps; an adhesive layer filling a gap between the first semiconductor chip and the second semiconductor chip, and including a central portion in the chip mounting region and at least one overflow portion protruding from the central portion to the test region to contact at least one of the plurality of first measurement structures; and a molding member on the upper surface of the first semiconductor chip to cover side surfaces of the second semiconductor chip.
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公开(公告)号:US11948851B2
公开(公告)日:2024-04-02
申请号:US17332471
申请日:2021-05-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunjae Kim , Eunsil Kang , Daehyun Kim , Sunkyoung Seo
IPC: H01L23/31 , H01L23/00 , H01L23/29 , H01L23/498 , H01L25/065 , H01L25/18 , H01L21/56
CPC classification number: H01L23/3192 , H01L23/295 , H01L23/3128 , H01L23/3185 , H01L23/49827 , H01L24/16 , H01L24/17 , H01L24/73 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/18 , H01L21/561 , H01L24/02 , H01L24/05 , H01L24/13 , H01L2224/02331 , H01L2224/02372 , H01L2224/02381 , H01L2224/0557 , H01L2224/06519 , H01L2224/13024 , H01L2224/16145 , H01L2224/16146 , H01L2224/16235 , H01L2224/17181 , H01L2224/17519 , H01L2224/2929 , H01L2224/29386 , H01L2224/29499 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2225/06568 , H01L2225/06589 , H01L2924/181 , H01L2924/1815 , H01L2924/18161
Abstract: A semiconductor package includes a first semiconductor chip on a wiring structure, a plurality of internal terminals between the wiring structure and the first semiconductor chip; a high thermal conductivity layer is between the wiring structure and the first semiconductor chip; and an encapsulator on the high thermal conductivity layer and contacting the second semiconductor chip. Sidewalls of at least the wiring structure and the encapsulator are substantially coplanar.
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公开(公告)号:US20220406831A1
公开(公告)日:2022-12-22
申请号:US17667993
申请日:2022-02-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunjae Kim
IPC: H01L27/146
Abstract: A sensor package includes: an image sensor including a body layer having an upper surface and a lower surface, opposite to the upper surface, a pixel layer disposed on the upper surface, a microlens array disposed on the pixel layer, a connection terminal disposed on the lower surface, and a through-via extending between the upper surface and the lower surface and electrically connected to the connection terminal; a support structure disposed on the pixel layer and having an opening in which the microlens array is accommodated; an optical filter disposed on the support structure and having a first region, overlapping the image sensor in a first direction, and a second region extending from the first region in a second direction, perpendicular to the first direction, and not overlapping the image sensor in the first direction; an encapsulant surrounding a side surface of the image sensor and a side surface of the support structure and covering and contacting a portion of a lower surface of the second region; and a connection bump disposed on the connection terminal of the image sensor. In the second direction, a first distance along a boundary where the lower surface of the optical filter at the second region contacts the encapsulant is greater than a second distance of a lower surface of the optical filter at the second region exposed from the encapsulant.
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