Abstract:
The present disclosure provides a display panel including: a substrate; a plurality of light emitting elements including semiconductor light emitting chips and disposed on the substrate; a plurality of color conversion layers overlapped with the plurality of light emitting elements and disposed thereon, respectively; and a plurality of absorption-type color filter layers directly disposed and having a surface shape of the plurality of color conversion layers, respectively, where a pitch between adjacent light emitting elements of the plurality of light emitting elements is less than or equal to about 100 micrometers, and at least one of the plurality of color conversion layers includes quantum dots.
Abstract:
Provided are a display panel, and an electronic device including display panel. The display panel includes: a substrate; a plurality of light emitting elements disposed on the substrate, each of the plurality of light emitting elements including a semiconductor light emitting chip; a plurality of micro lenses disposed on the light emitting elements, respectively, each of the micro lenses surrounding each of the light emitting elements; and a plurality of color conversion layers disposed on or under the plurality of micro lenses, respectively, each of the color conversion layers having a shape corresponding to each of the plurality of micro lenses.
Abstract:
A method of manufacturing a semiconductor device having a doped layer may be provided. The method includes providing a substrate having a first region and a second region, forming a gate dielectric layer on the substrate, forming a first gate electrode layer on the gate dielectric layer, forming a first doped layer on the first gate electrode layer, forming a first capping layer on the first doped layer, forming a mask pattern on the first capping layer in the first region, the mask pattern exposing the first capping layer in the second region, removing the first capping layer and the first doped layer in the second region, removing the mask pattern, and forming a second doped layer on the first capping layer in the first region and the first gate electrode layer in the second region.
Abstract:
An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.
Abstract:
A method of manufacturing a semiconductor nanoparticle, the semiconductor nanoparticle manufactured therefrom, and an electronic device including the semiconductor nanoparticle. The method of manufacturing the semiconductor nanoparticle includes combining a first semiconductor nanocrystal that includes silver, a Group 13 element, and a chalcogen element, with a gallium precursor, a sulfur precursor, and a silver compound in a medium including an organic solvent; and heating the medium to a reaction temperature to obtain a crude solution including the semiconductor nanoparticles. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and the size is greater than or equal to about 2 nm and less than or equal to about 50 nm.
Abstract:
A fin type active pattern is formed on a substrate. The fin type active pattern projects from the substrate. A diffusion film is formed on the fin type active pattern. The diffusion film includes an impurity. The impurity is diffused into a lower portion of the fin type active pattern to form a punch-through stopper diffusion layer.
Abstract:
A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.
Abstract:
A display panel and an electronic device including the display panel are provided, where the display panel includes a quantum dot composite including a matrix and a plurality of quantum dots and titanium dioxide (TiO2) particles dispersed in the matrix, the plurality of quantum dots include silver and gallium, exhibit an emission peak wavelength of from about 500 nm to about 550 nm, and a full width at half maximum of the emission peak is greater than or equal to about 10 nm and less than or equal to about 50 nm, and where the quantum dot composite has a mole ratio of silver to titanium of greater than or equal to about 0.4:1 and less than or equal to about 15:1, and a mole ratio of gallium to titanium of greater than or equal to about 0.4:1 and less than or equal to about 20:1.
Abstract:
A pellicle cleaning apparatus includes a stage to support a pellicle, a particle remover above the stage, the particle remover being configured to remove a particle from a first surface of a pellicle, and the particle remover including a cantilever, and an adhesive material on a bottom surface of the cantilever, and a pressure controller adjacent to the stage, the pressure controller being configured to control a pressure of a fluid on a second surface of the pellicle.
Abstract:
A display panel includes a color conversion panel and a light emitting panel, the light emitting panel includes a light emitting device that includes a first electrode, a second electrode, and a blue light emitting unit that includes an organic light emitting layer and is disposed between the first electrode and the second electrode and is configured to emit blue light. The color conversion panel includes a color conversion layer including at least two color conversion regions, and optionally, a partition wall defining that at least two regions, wherein the color conversion region includes a first region corresponding to a green pixel, a second region corresponding to a red pixel, and optionally a third region corresponding to a blue pixel. The first region includes a first composite including a matrix and a plurality of first semiconductor nanoparticles dispersed in the matrix, the first semiconductor nanoparticles includes a Group I-III-VI compound including silver, indium, gallium, and sulfur, and is configured to emit green light.