DISPLAY DEVICE AND ELECTRONIC DEVICE

    公开(公告)号:US20230126029A1

    公开(公告)日:2023-04-27

    申请号:US17973922

    申请日:2022-10-26

    Abstract: Provided are a display panel, and an electronic device including display panel. The display panel includes: a substrate; a plurality of light emitting elements disposed on the substrate, each of the plurality of light emitting elements including a semiconductor light emitting chip; a plurality of micro lenses disposed on the light emitting elements, respectively, each of the micro lenses surrounding each of the light emitting elements; and a plurality of color conversion layers disposed on or under the plurality of micro lenses, respectively, each of the color conversion layers having a shape corresponding to each of the plurality of micro lenses.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING DOPED LAYER
    3.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING DOPED LAYER 有权
    制造具有DOPED层的半导体器件的方法

    公开(公告)号:US20140357071A1

    公开(公告)日:2014-12-04

    申请号:US14276213

    申请日:2014-05-13

    Abstract: A method of manufacturing a semiconductor device having a doped layer may be provided. The method includes providing a substrate having a first region and a second region, forming a gate dielectric layer on the substrate, forming a first gate electrode layer on the gate dielectric layer, forming a first doped layer on the first gate electrode layer, forming a first capping layer on the first doped layer, forming a mask pattern on the first capping layer in the first region, the mask pattern exposing the first capping layer in the second region, removing the first capping layer and the first doped layer in the second region, removing the mask pattern, and forming a second doped layer on the first capping layer in the first region and the first gate electrode layer in the second region.

    Abstract translation: 可以提供制造具有掺杂层的半导体器件的方法。 该方法包括提供具有第一区域和第二区域的衬底,在衬底上形成栅极电介质层,在栅极电介质层上形成第一栅电极层,在第一栅电极层上形成第一掺杂层,形成第 在所述第一掺杂层上形成第一覆盖层,在所述第一区域中的所述第一覆盖层上形成掩模图案,所述掩模图案在所述第二区域中暴露所述第一覆盖层,在所述第二区域中去除所述第一覆盖层和所述第一掺杂层 去除所述掩模图案,以及在所述第一区域中的所述第一覆盖层和所述第二区域中的所述第一栅极电极层上形成第二掺杂层。

    ETCHING APPARATUS AND ETCHING METHOD
    4.
    发明申请
    ETCHING APPARATUS AND ETCHING METHOD 有权
    蚀刻装置和蚀刻方法

    公开(公告)号:US20140251956A1

    公开(公告)日:2014-09-11

    申请号:US14199160

    申请日:2014-03-06

    Abstract: An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.

    Abstract translation: 一种用于蚀刻工艺的设备包括:室,设置在室中的等离子体发生器,堆叠结构,设置在室中以在其上支撑基板,并且在电极板上包括电极板和绝缘涂层,电极棒插入 层叠结构的孔穿透堆叠结构,直接接触基板并与堆叠结构的通孔的侧壁间隔开,至少一个DC脉冲发生器首先向电极板和电极棒产生DC脉冲 将DC脉冲发生器连接到电极棒的连接线以及将DC脉冲发生器连接到电极板的下部的至少一个第二连接线。

    DISPLAY PANEL AND ELECTRONIC APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240099094A1

    公开(公告)日:2024-03-21

    申请号:US18457684

    申请日:2023-08-29

    CPC classification number: H10K59/38 H10K59/32 H10K2102/331

    Abstract: A display panel includes a color conversion panel and a light emitting panel, the light emitting panel includes a light emitting device that includes a first electrode, a second electrode, and a blue light emitting unit that includes an organic light emitting layer and is disposed between the first electrode and the second electrode and is configured to emit blue light. The color conversion panel includes a color conversion layer including at least two color conversion regions, and optionally, a partition wall defining that at least two regions, wherein the color conversion region includes a first region corresponding to a green pixel, a second region corresponding to a red pixel, and optionally a third region corresponding to a blue pixel. The first region includes a first composite including a matrix and a plurality of first semiconductor nanoparticles dispersed in the matrix, the first semiconductor nanoparticles includes a Group I-III-VI compound including silver, indium, gallium, and sulfur, and is configured to emit green light.

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