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公开(公告)号：US20160239250A1
公开(公告)日：2016-08-18
申请号：US15045485
申请日：2016-02-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae-Hyung KIM , Kwang-Hyun KO , Alexander LARIONOV , Yong-Ha CHOI
IPC: G06F3/14
CPC classification number: G06F3/1431 , G06F3/1454
Abstract: A method and an electronic device for providing a screen mirroring service are provided. The method includes connecting a control channel to at least one other electronic device when an electronic device executes a screen mirroring service, transmitting screen data comprising an added virtual key, to the other electronic device, and performing a function based on a control signal corresponding to using the virtual key received from the other electronic device over the control channel.
Abstract translation: 提供了一种用于提供屏幕镜像服务的方法和电子设备。 该方法包括当电子设备执行屏幕镜像服务，将包括添加的虚拟键的屏幕数据发送到另一电子设备时，将控制信道连接到至少一个其他电子设备，并且基于对应于 使用通过控制信道从另一电子设备接收的虚拟键。
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公开(公告)号：US20230337443A1
公开(公告)日：2023-10-19
申请号：US18126761
申请日：2023-03-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ho Young TANG , Tae-Hyung KIM , Dae Young MOON , Sang-Yeop BAECK , Dong-Wook SEO
Abstract: Provided are a three-dimensional (3D) semiconductor integrated circuit and a static random access memory (SRAM) device. The three-dimensional (3D) semiconductor integrated circuit includes: a first die including a power supply circuit a second die including an SRAM with a through-silicon-via (TSV) bundle region; a third die including a processor; and TSVs, each of which is provided on the TSV bundle region and extends from the TSV bundle region to the third die. The SRAM device includes: a bank array with banks, each of which includes sub-bit-cell arrays and a local peripheral circuit region arranged in a cross (+) shape between the sub-bit-cell arrays; and a global peripheral circuit region including a tail peripheral circuit region extending in a first direction and a head peripheral circuit region extending in a second direction, the tail peripheral circuit region and the head peripheral circuit region being arranged in a “T” shape.
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3.发明公开公开(公告)号：US20230186982A1
公开(公告)日：2023-06-15
申请号：US18164199
申请日：2023-02-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop BAECK , Tae-Hyung KIM , Daeyoung MOON , Dong-Wook SEO , Inhak LEE , Hyunsu CHOI , Taejoong SONG , Jae-Seung CHOI , Jung-Myung Kang , Hoon KIM , Jisu YU , Sun-Yung JANG
IPC: G11C11/419 , G11C7/08 , H10B10/00 , H01L23/528 , H01L27/092
CPC classification number: G11C11/419 , G11C7/08 , H10B10/12 , H10B10/18 , H01L23/5286 , H01L27/092
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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公开(公告)号：US20150115281A1
公开(公告)日：2015-04-30
申请号：US14594039
申请日：2015-01-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-In YANG , Tae-Hyung KIM , Si-Hyuk LEE , Sang-Yeob SONG , Cheol-Soo SONE , Hak-Hwan KIM , Jin-Hyun LEE
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
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公开(公告)号：US20140374772A1
公开(公告)日：2014-12-25
申请号：US14483036
申请日：2014-09-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-In YANG , Tae-Hyung KIM , Si-Hyuk LEE , Sang-Yeob SONG , Cheol-Soo SONE , Hak-Hwan KIM , Jin-Hyun LEE
CPC classification number: H01L33/62 , H01L33/0025 , H01L33/005 , H01L33/007 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
Abstract translation: 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。
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Patent Agency Ranking
公开(公告)号：US20140146836A1
公开(公告)日：2014-05-29
申请号：US14091615
申请日：2013-11-27
Applicant: Samsung Electronics Co. Ltd.
Inventor： Tae-Hyung KIM , Jung-Wook CHAI
IPC: H04L29/06
CPC classification number: H04L65/601 , H04L65/10 , H04L65/80 , H04L69/326 , H04N21/44004
Abstract: A video transmitting method for video streaming is provided. The method includes generating a video packet including one video frame, transmitting at least one transport packet generated using the video packet, and transmitting a dummy transport packet for indicating a boundary of the video packet if a size of the video frame exceeds a threshold.
Abstract translation: 提供了一种用于视频流的视频传输方法。 该方法包括生成包括一个视频帧的视频分组，发送使用该视频分组产生的至少一个传输分组，并且如果视频帧的大小超过阈值，则发送用于指示视频分组的边界的虚拟传输分组。
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公开(公告)号：US20210383861A1
公开(公告)日：2021-12-09
申请号：US17412588
申请日：2021-08-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop BAECK , Tae-Hyung KIM , Daeyoung MOON , Dong-Wook SEO , Inhak LEE , Hyunsu CHOI , Taejoong SONG , Jae-Seung CHOI , Jung-Myung KANG , Hoon KIM , Jisu YU , Sun-Yung JANG
IPC: G11C11/419 , G11C7/08 , H01L23/528 , H01L27/092 , H01L27/11
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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8.发明申请公开(公告)号：US20200005860A1
公开(公告)日：2020-01-02
申请号：US16566002
申请日：2019-09-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop BAECK , Tae-Hyung KIM , Daeyoung MOON , Dong-Wook SEO , Inhak LEE , Hyunsu CHOI , Taejoong SONG , Jae-Seung CHOI , Jung-Myung KANG , Hoon KIM , Jisu YU , Sun-Yung JANG
IPC: G11C11/419 , H01L23/528 , H01L27/092 , H01L27/11
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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9.发明申请公开(公告)号：US20170221554A1
公开(公告)日：2017-08-03
申请号：US15417807
申请日：2017-01-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop BAECK , Tae-Hyung KIM , Daeyoung MOON , Dong-Wook SEO , Inhak LEE , Hyunsu CHOI , Taejoong SONG , Jae-Seung CHOI , Jung-Myung KANG , Hoon KIM , Jisu YU , Sun-Yung JANG
IPC: G11C11/419 , H01L23/528 , H01L27/092 , H01L27/11
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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公开(公告)号：US20140064695A1
公开(公告)日：2014-03-06
申请号：US14011085
申请日：2013-08-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： You-Kyung CHO , Soung-Kwan KIMN , Jong-Kyu KIM , Tae-Hyung KIM , Jung-Wook CHAI
IPC: H04N9/87
CPC classification number: H04N9/87 , H04N5/765 , H04N5/783 , H04N21/41407 , H04N21/632
Abstract: A system for controlling a video is provided. The system includes a terminal which transmits a flush command to an external device to delete buffered data in a buffer of the external device when a search command for moving to a location of specific data of a video is generated while data of the video is streamed to the external device and which then transmits to the external device the specific data located in relation to the search command, and an external device which deletes the buffered data in the buffer when the flush command is received from the terminal while a video streamed from the terminal is reproduced and which buffers the specific data of the video received from the terminal in the buffer to be output.
Abstract translation: 提供了一种用于控制视频的系统。 该系统包括一个终端，当用于移动到视频的特定数据的位置的搜索命令生成视频的数据，同时将视频的数据流传输到外部设备的缓冲器中时，向外部设备发送刷新命令以删除外部设备的缓冲器中的缓冲数据， 外部设备，然后向外部设备发送与搜索命令相关的特定数据;以及外部设备，当从终端接收到视频流时，从终端接收到刷新命令时，删除缓冲器中的缓冲数据 被再现并且缓冲从缓冲器中的终端接收的视频的特定数据以被输出。
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