公开(公告)号：US09397196B2

公开(公告)日：2016-07-19

申请号：US14699091

申请日：2015-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Jun Sim ,  Jae-Young Park ,  Sun-Young Lee

IPC: H01L21/428 ,  H01L29/66 ,  H01L21/306 ,  H01L21/762 ,  H01L21/28 ,  H01L29/51 ,  H01L21/02 ,  H01L21/268

CPC classification number: H01L29/66795 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/2686 ,  H01L21/28185 ,  H01L21/30604 ,  H01L21/76224 ,  H01L29/165 ,  H01L29/51 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: In a method of manufacturing a semiconductor device, a preliminary gate insulation layer is formed on a substrate, and at least a portion of the substrate serves as a channel region. A hydrogen plasma treatment is performed on the preliminary gate insulation layer to form a gate insulation layer, and the hydrogen plasma treatment supplying a hydrogen-containing gas and an inert gas supply in a chamber via different gas supply parts to form a hydrogen plasma region and an inert gas plasma region in the chamber, respectively. A gate electrode is formed on the gate insulation layer, and impurity regions are formed at upper portions of the substrate adjacent to the gate electrode.

Abstract translation: 在半导体装置的制造方法中，在基板上形成预备栅极绝缘层，并且至少一部分基板作为沟道区域。 在预备栅极绝缘层上进行氢等离子体处理以形成栅极绝缘层，并且氢等离子体处理通过不同的气体供应部分在室中提供含氢气体和惰性气体源，以形成氢等离子体区域， 室内的惰性气体等离子体区域。 栅电极形成在栅极绝缘层上，杂质区形成在与栅电极相邻的衬底的上部。

公开(公告)号：US09859376B2

公开(公告)日：2018-01-02

申请号：US14977865

申请日：2015-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-ki Lee ,  Jae-Young Park ,  Dong-Hun Lee ,  Bon-Young Koo ,  Sun-Young Lee ,  Jae-Jong Han

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/775

CPC classification number: H01L29/1054 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a multi-channel active pattern including germanium and an inner region and an outer region, the outer region formed along a profile of the inner region, and a germanium fraction of the outer region being smaller than a germanium fraction of the inner region. A gate electrode intersects the multi-channel active pattern.

公开(公告)号：US20150325683A1

公开(公告)日：2015-11-12

申请号：US14612797

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Hwi Cho ,  Dong-Won Kim ,  Yoshinao Harada ,  Myung-Gil Kang ,  Jae-Young Park

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/66803 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66795

Abstract: In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled.

Abstract translation: 在制造半导体器件的方法中，执行等离子体退火并将阈值电压控制气体供应到衬底的一部分上，以在衬底的表面上形成包括固定电荷的固定电荷区域。 在包括固定电荷区的基板上形成MOS晶体管。 通过上述处理，可以容易地控制MOS晶体管的阈值电压。

公开(公告)号：US09577076B2

公开(公告)日：2017-02-21

申请号：US14612797

申请日：2015-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keun-Hwi Cho ,  Dong-Won Kim ,  Yoshinao Harada ,  Myung-Gil Kang ,  Jae-Young Park

IPC: H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L21/8238 ,  H01L21/84

CPC classification number: H01L29/66803 ,  H01L21/26513 ,  H01L21/324 ,  H01L21/823821 ,  H01L21/845 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66795

Abstract: In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled.

Abstract translation: 在制造半导体器件的方法中，执行等离子体退火并将阈值电压控制气体供应到衬底的一部分上，以在衬底的表面上形成包括固定电荷的固定电荷区域。 在包括固定电荷区的基板上形成MOS晶体管。 通过上述处理，可以容易地控制MOS晶体管的阈值电压。

公开(公告)号：US09696830B2

公开(公告)日：2017-07-04

申请号：US14467546

申请日：2014-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Han Kim ,  Yeong-Seop Lee ,  Seok-Hong Jeong ,  Myung-Sop Lee ,  Kyoung-Suk Oh ,  Jung-Hun Woo ,  Dong-Chul Lee ,  Jong-Hyun Yim ,  Sung-Il Jang ,  Yong-Gu Cho ,  Hyoung-Jun Go ,  Kyoung-Hun Kim ,  Jeong-Eun Kim ,  Hyeon-Beom Kim ,  Dae-Bin Noh ,  Jae-Young Park ,  Eun-Jin Baek ,  Chung-Hee Lee ,  Sung-Ho Jung ,  Jae-Wook Cho

IPC: G06F3/041 ,  G06F3/044 ,  G06F1/16

CPC classification number: G06F3/041 ,  G06F1/1603 ,  G06F3/044 ,  G06F2203/04103 ,  Y10T29/49105

Abstract: Provided is a method of manufacturing a transparent circuit substrate for a touch screen. The method may involve forming an electrode layer on a transparent substrate, stacking a light shielding layer on the transparent substrate such that the light shielding layer is located on an outside of the electrode layer, stacking a mask on the light shielding layer and the electrode layer, forming a conductive layer on the mask, forming connecting lines for connecting the electrode layer and connecting terminals by removing the mask and a portion of the conductive layer, and forming the connecting terminals on the light shielding layer such that the connecting terminals contact the connecting lines.