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    Semiconductor device having architecture for reducing area and semiconductor system including the same
    3.
    发明授权
    Semiconductor device having architecture for reducing area and semiconductor system including the same 有权
    具有用于减小面积的结构的半导体器件和包括其的半导体系统

    公开(公告)号：US08238148B2

    公开(公告)日：2012-08-07

    申请号：US12652190

    申请日：2010-01-05

    申请人： Ho Jung Kim ,  Chul Woo Park ,  Sang Beom Kang ,  Jung Min Lee ,  Hyun Ho Choi

    发明人： Ho Jung Kim ,  Chul Woo Park ,  Sang Beom Kang ,  Jung Min Lee ,  Hyun Ho Choi

    IPC分类号： G11C11/00 ,  G11C7/10 ,  G11C7/00 ,  G11C8/00

    CPC分类号： G11C7/1039 ,  G11C7/1033 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/1069 ,  G11C7/1078 ,  G11C7/1087 ,  G11C7/1096 ,  G11C13/0004 ,  G11C2207/107

    摘要： A semiconductor device having an architecture for reducing an area is provided. The semiconductor device includes a memory cell array including a plurality of non-volatile memory cells, a plurality of registers each configured to store pre-fetch unit data, and a write driver circuit configured to write pre-fetch unit data sequentially output from the plurality of registers to the memory cell array during a write operation. The semiconductor device also includes a sense amplifier circuit configured to sense and amplify pre-fetch unit data sequentially output from the memory cell array and to sequentially store the amplified pre-fetch unit data in the plurality of registers, respectively, during a read operation.

    摘要翻译： 提供了具有用于减小面积的架构的半导体器件。 半导体器件包括存储单元阵列，该存储单元阵列包括多个非易失性存储器单元，多个寄存器，每个寄存器被配置为存储预取单元数据;以及写入驱动器电路，被配置为写入从多个单元顺序地输出的预取单元数据 的寄存器在写操作期间到存储单元阵列。 半导体器件还包括读出放大器电路，其被配置为感测并放大从存储单元阵列顺序输出的预取单元数据，并且在读取操作期间分别顺序地将放大的预取单元数据存储在多个寄存器中。

    Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement
    6.
    发明授权
    Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement 有权
    集成电路存储器系统及其编程方法，包括使用磁畴壁移动的磁迹存储器阵列

    公开(公告)号：US08279667B2

    公开(公告)日：2012-10-02

    申请号：US12775133

    申请日：2010-05-06

    申请人： Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

    发明人： Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

    IPC分类号： G11C11/15

    CPC分类号： G11C19/0841 ,  G11C8/14 ,  G11C11/14

    摘要： Provided are nonvolatile memory devices and program methods thereof, an integrated circuit memory system includes a memory array comprising at least one magnetic track, each of the at least one magnetic track including a plurality of magnetic domains and at least one read/write unit coupled thereto, decoding circuitry coupled to the memory array that is operable to select at least one of the magnetic domains, a read/write controller coupled to the memory array that is operable to read data from at least one of the plurality of magnetic domains and to write data to at least one of the plurality of magnetic domains via the at least one read/write unit coupled to each of the at least one magnetic track, and a domain controller coupled to memory array that is operable to move data between the magnetic domains on each of the at least one magnetic track.

    摘要翻译： 提供了非易失性存储器件及其编程方法，集成电路存储器系统包括存储器阵列，该存储器阵列包括至少一个磁道，至少一个磁道中的每个磁道包括多个磁畴，以及至少一个耦合到其上的读/写单元 耦合到所述存储器阵列的解码电路，其可操作以选择所述磁畴中的至少一个;耦合到所述存储器阵列的读/写控制器，其可操作以从所述多个磁畴中的至少一个读取数据并写入 经由耦合到所述至少一个磁道中的每一个的所述至少一个读/写单元向所述多个磁畴中的至少一个提供数据，以及耦合到可操作以在所述磁畴之间移动数据的存储器阵列的域控制器 所述至少一个磁道中的每一个。

    INTEGRATED CIRCUIT MEMORY SYSTEMS AND PROGRAM METHODS THEREOF INCLUDING A MAGNETIC TRACK MEMORY ARRAY USING MAGNETIC DOMAIN WALL MOVEMENT
    7.
    发明申请
    INTEGRATED CIRCUIT MEMORY SYSTEMS AND PROGRAM METHODS THEREOF INCLUDING A MAGNETIC TRACK MEMORY ARRAY USING MAGNETIC DOMAIN WALL MOVEMENT 有权
    集成电路存储器系统及其程序方法，包括使用磁场移动的磁性跟踪存储器阵列

    公开(公告)号：US20100284209A1

    公开(公告)日：2010-11-11

    申请号：US12775133

    申请日：2010-05-06

    申请人： Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

    发明人： Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

    IPC分类号： G11C19/00 ,  G11C7/00

    CPC分类号： G11C19/0841 ,  G11C8/14 ,  G11C11/14

    摘要： Provided are nonvolatile memory devices and program methods thereof. an integrated circuit memory system includes a memory array comprising at least one magnetic track, each of the at least one magnetic track including a plurality of magnetic domains and at least one read/write unit coupled thereto, decoding circuitry coupled to the memory array that is operable to select at least one of the magnetic domains, a read/write controller coupled to the memory array that is operable to read data from at least one of the plurality of magnetic domains and to write data to at least one of the plurality of magnetic domains via the at least one read/write unit coupled to each of the at least one magnetic track, and a domain controller coupled to memory array that is operable to move data between the magnetic domains on each of the at least one magnetic track.

    摘要翻译： 提供了非易失性存储器件及其编程方法。 集成电路存储器系统包括存储器阵列，其包括至少一个磁道，所述至少一个磁道中的每一个磁道包括多个磁畴和耦合到其上的至少一个读/写单元，耦合到存储器阵列的解码电路， 可操作以选择磁畴中的至少一个;耦合到存储器阵列的读/写控制器，其可操作以从多个磁畴中的至少一个读取数据，并将数据写入多个磁区中的至少一个 通过耦合到所述至少一个磁道中的每一个的所述至少一个读/写单元的域，以及耦合到存储器阵列的域控制器，所述存储器阵列可操作以在所述至少一个磁道中的每一个上的所述磁畴之间移动数据。