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13 条记录 (耗时 0.024 秒)

    Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns
    1.
    发明申请
    Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns 有权
    用于形成活性图案的光敏组合物，形成这种活性图案的方法和结合这种活性图案的有机记忆装置

    公开(公告)号：US20070202436A1

    公开(公告)日：2007-08-30

    申请号：US11655171

    申请日：2007-01-19

    申请人： Sang Lee ,  Won Joo ,  Kwang Lee ,  Tae Choi ,  Myung Jung

    发明人： Sang Lee ,  Won Joo ,  Kwang Lee ,  Tae Choi ,  Myung Jung

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0005 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0392 ,  H01L51/0545 ,  Y10S430/122

    摘要： Disclosed herein are compositions useful in forming organic active patterns that may, in turn, be incorporated in organic memory devices. The compositions comprise N-containing conjugated electroconductive polymer(s), photoacid generator(s) and organic solvent(s) capable of dissolving suitable quantifies of both the electroconductive polymer and the photoacid generator. Also disclosed are methods for patterning organic active layers formed using one or more of the compositions to produce organic active patterns, portions of which may be arranged between opposed electrodes to provide organic memory cells. The methods include directly exposing and developing the organic active layer to obtain fine patterns without the use of a separate masking pattern, for example, a photoresist pattern, thereby tending to simplify the fabrication process and reduce the associated costs.

    摘要翻译： 本文公开了可用于形成有机活性图案的组合物，其可以结合到有机存储器件中。 组合物包含含N的共轭导电聚合物，光酸产生剂和能够溶解导电聚合物和光致酸产生剂两者的适当定量的有机溶剂。 还公开了使用一种或多种组合物形成有机活性层以制造有机活性图案的方法，所述有机活性图案的一部分可以布置在相对的电极之间以提供有机记忆单元。 这些方法包括直接曝光和显影有机活性层以获得精细图案，而不使用单独的掩模图案，例如光刻胶图案，从而趋于简化制造工艺并降低相关成本。

    Method for fabricating flash memory device
    3.
    发明申请
    Method for fabricating flash memory device 失效
    闪存器件制造方法

    公开(公告)号：US20050139898A1

    公开(公告)日：2005-06-30

    申请号：US11024193

    申请日：2004-12-29

    申请人： Tae Choi

    发明人： Tae Choi

    IPC分类号： H01L27/115 ,  H01L21/28 ,  H01L21/8247 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/788

    CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L29/42324

    摘要： A flash memory device fabrication method is disclosed. A disclosed method comprises: forming an oxide layer on a substrate; depositing a first polysilicon on the entire surface of the oxide layer and patterning the first polysilicon; depositing an insulating layer on the entire surface of the first polysilicon and patterning the insulating layer to expose the first polysilicon; depositing a second polysilicon on the entire surface of the resulting structure and patterning the second polysilicon; removing the insulating layer; depositing a dielectric layer on the entire surface of the resulting structure; and depositing a third polysilicon on the entire surface of the dielectric layer.

    摘要翻译： 公开了一种闪存器件制造方法。 所公开的方法包括：在衬底上形成氧化物层; 在所述氧化物层的整个表面上沉积第一多晶硅并对所述第一多晶硅进行构图; 在所述第一多晶硅的整个表面上沉积绝缘层并且图案化所述绝缘层以露出所述第一多晶硅; 在所得结构的整个表面上沉积第二多晶硅并图案化第二多晶硅; 去除绝缘层; 在所得结构的整个表面上沉积介电层; 以及在所述电介质层的整个表面上沉积第三多晶硅。

    Nonvolatile semiconductor memory devices and methods of manufacturing the same
    5.
    发明申请
    Nonvolatile semiconductor memory devices and methods of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20050139896A1

    公开(公告)日：2005-06-30

    申请号：US11023314

    申请日：2004-12-27

    申请人： Tae Choi

    发明人： Tae Choi

    IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/788

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： Nonvolatile semiconductor memory devices and methods of manufacturing the same are disclosed. A disclosed nonvolatile semiconductor memory cell includes a semiconductor substrate; first and second semiconductor cells positioned on the semiconductor substrate at a distance from each other; a first source and a second source adjacent the first and second semiconductor cells; a first drain contact between the first and second semiconductor cells; first and second cap dielectrics formed on the first and second semiconductor cells, respectively; first and second sidewall spacers formed on sidewalls of the first and second semiconductor cells, respectively; an inter metal dielectric layer covering the first and second cap dielectrics and the first and second sidewall spacers, a drain contact hole exposing the drain; and a second drain contact connected to the first drain contact through the drain contact hole.

    摘要翻译： 公开了非易失性半导体存储器件及其制造方法。 所公开的非易失性半导体存储单元包括半导体衬底; 位于半导体衬底上彼此间隔一定距离的第一和第二半导体单元; 邻近第一和第二半导体单元的第一源极和第二源极; 第一和第二半导体单元之间的第一漏极接触; 分别形成在第一和第二半导体单元上的第一和第二盖电介质; 分别形成在第一和第二半导体单元的侧壁上的第一和第二侧壁间隔物; 覆盖第一和第二盖电介质以及第一和第二侧壁间隔物的金属间介电层，暴露漏极的漏极接触孔; 以及通过漏极接触孔连接到第一漏极接触的第二漏极接触。

    Nonvolatile memory device and methods of fabricating the same
    6.
    发明申请
    Nonvolatile memory device and methods of fabricating the same 有权
    非易失存储器件及其制造方法

    公开(公告)号：US20050139894A1

    公开(公告)日：2005-06-30

    申请号：US11024848

    申请日：2004-12-30

    申请人： Tae Choi

    发明人： Tae Choi

    IPC分类号： H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/76

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： A method of fabricating a nonvolatile memory device including forming a plurality of device isolation layers in a semiconductor substrate to define a plurality of active regions, sequentially depositing an insulating layer and a first conductive layer on the semiconductor substrate, and forming a hard mask pattern on the first conductive layer. The method also includes forming a plurality of floating gates on the insulating layer by etching the first conductive layer using the hard mask pattern as a mask, forming a tunnel insulating layer on the semiconductor substrate including floating gates and the insulating layer, and depositing a second conductive layer on the tunnel insulating layer. The method further includes forming a plurality of control gate electrodes across the active regions by etching the second conductive layer, forming source and drain regions in the semiconductor substrate by performing an ion implantation, and forming contacts in the drain regions.

    摘要翻译： 一种制造非易失性存储器件的方法，包括在半导体衬底中形成多个器件隔离层以限定多个有源区，在半导体衬底上依次沉积绝缘层和第一导电层，以及在半导体衬底上形成硬掩模图案 第一导电层。 该方法还包括通过使用硬掩模图案作为掩模蚀刻第一导电层来在绝缘层上形成多个浮置栅极，在包括浮置栅极和绝缘层的半导体衬底上形成隧道绝缘层，并且沉积第二 隧道绝缘层上的导电层。 该方法还包括通过蚀刻第二导电层来形成跨越有源区的多个控制栅电极，通过进行离子注入在半导体衬底中形成源区和漏区，并在漏极区中形成接触。

    Traffic measurement system and traffic analysis method thereof
    8.
    发明申请
    Traffic measurement system and traffic analysis method thereof 有权
    交通测量系统及其交通分析方法

    公开(公告)号：US20050249125A1

    公开(公告)日：2005-11-10

    申请号：US10693416

    申请日：2003-10-23

    申请人： Seung Yoon ,  Tae Jeong ,  Tae Choi ,  Hyung Kim ,  Hyung Chung ,  Jeong Park ,  Chang Kim

    发明人： Seung Yoon ,  Tae Jeong ,  Tae Choi ,  Hyung Kim ,  Hyung Chung ,  Jeong Park ,  Chang Kim

    IPC分类号： H04L12/26 ,  H04L12/28 ,  H04L12/56 ,  H04M3/22 ,  H04Q3/545

    CPC分类号： H04L43/026 ,  H04L43/045 ,  H04L43/062

    摘要： A traffic measurement system and a traffic analysis method are provided. The traffic measurement system includes a plurality of measurement devices that collect all of packets flowing through Internet links, extract traffic data required to analyze traffic from the collected packets, and process the extracted data into predetermined flow types, and an analysis server that identifies applications of traffic by analyzing the traffic data transferred from the plurality of measurement devices as a whole, classifies the identified applications into predetermined traffic types, and outputs the classification result. The traffic measurement system measures the traffics in the Internet network and processes the measured traffics to generate detailed traffic statistical data according to applications. In particular, the traffics are analyzed considering measurement data from various points, and the data for identifying the applications are extracted from headers of the applications included in payloads of IP packets in real time. Accordingly, detailed traffic analysis result is provided.

    摘要翻译： 提供了交通量测系统和交通分析方法。 交通测量系统包括多个测量装置，其收集通过互联网链路流动的所有分组，提取从所收集的分组中分析流量所需的业务数据，并将所提取的数据处理为预定的流类型;以及分析服务器， 通过分析从多个测量设备传送的业务数据作为整体，将所识别的应用分类为预定的业务类型，并输出分类结果。 流量测量系统测量互联网网络中的流量，并根据应用程序处理测量的流量以生成详细的流量统计数据。 特别地，考虑来自各个点的测量数据来分析流量，并且实时地从包含在IP分组的有效载荷中的应用的头部中提取用于识别应用的数据。 因此，提供了详细的交通分析结果。

    Apparatus and method for transferring semiconductor wafers
    10.
    发明申请
    Apparatus and method for transferring semiconductor wafers 审中-公开
    用于转移半导体晶片的装置和方法

    公开(公告)号：US20060280589A1

    公开(公告)日：2006-12-14

    申请号：US11343231

    申请日：2006-01-30

    申请人： Chang Choi ,  Tae Choi ,  Byung Kim

    发明人： Chang Choi ,  Tae Choi ,  Byung Kim

    IPC分类号： B65G1/133

    CPC分类号： H01L21/67766 ,  H01L21/67781

    摘要： There is provided apparatus and methods for transferring semiconductor wafers, wherein some embodiments employ a guide body; a first transferring unit including a support reciprocatively slidibly connected to the guide body, and a central finger supported by the support; and a second transferring unit including a base; a driving unit disposed in the support; a ball screw rotated by the driving unit; a guide member connecting with the ball screw, wherein the guide member has an outer inclined surface; a lever in surface contact with the guide member to be rotated around its center by the inclined surface when the guide member moves; a plurality of slide members in contact with the lever and slidable on the guide shaft as the lever rotates; a plurality of connection members spaced from each other and engaging with the corresponding slide members; and driving fingers connected to the corresponding connection members.

    摘要翻译： 提供了用于传送半导体晶片的装置和方法，其中一些实施例采用引导体; 第一传送单元，其包括可往复地可滑动地连接到所述引导体的支撑件和由所述支撑件支撑的中心指状物; 以及包括基座的第二传送单元; 布置在所述支撑件中的驱动单元; 由驱动单元旋转的滚珠丝杠; 与所述滚珠丝杠连接的引导构件，其中所述引导构件具有外倾斜面; 所述杆与所述引导构件表面接触，以在所述引导构件移动时围绕所述倾斜表面围绕其中心旋转; 多个滑动构件，其与所述杆接触并且当所述杆旋转时可在所述导向轴上滑动; 多个连接构件彼此间隔开并与相应的滑动构件接合; 以及连接到相应的连接构件的驱动手指。