公开(公告)号：US08953376B2

公开(公告)日：2015-02-10

申请号：US13401151

申请日：2012-02-21

申请人： Sang-Wan Nam ,  Chiweon Yoon ,  Jung-Soo Kim

发明人： Sang-Wan Nam ,  Chiweon Yoon ,  Jung-Soo Kim

IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C16/26 ,  H01L27/115

CPC分类号： G11C16/26 ,  G11C16/0483 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： According to example embodiments, a read method of a nonvolatile memory device includes Disclosed is a read method of a nonvolatile memory device which includes selecting one of a plurality of vertical strings in a nonvolatile memory device, judging a channel length between a common source line and a selected one of the plurality of vertical strings, selecting a sensing manner corresponding to the judged channel length, and performing a sensing operation according to the selected sensing manner. The plurality of vertical strings may extend in a direction perpendicular to a substrate of the nonvolatile memory device.

摘要翻译： 根据示例实施例，非易失性存储器件的读取方法包括：非易失性存储器件的读取方法，其包括选择非易失性存储器件中的多个垂直条之一，判断公共源极线和 选择多个垂直串中的一个，选择与所判断的信道长度相对应的感测方式，以及根据所选择的感测方式执行感测操作。 多个垂直线可以在垂直于非易失性存储器件的衬底的方向上延伸。

公开(公告)号：US20120224426A1

公开(公告)日：2012-09-06

申请号：US13401151

申请日：2012-02-21

申请人： Sang-Wan Nam ,  ChiWeon Yoon ,  Jung-Soo Kim

发明人： Sang-Wan Nam ,  ChiWeon Yoon ,  Jung-Soo Kim

IPC分类号： G11C16/26 ,  G11C16/04

CPC分类号： G11C16/26 ,  G11C16/0483 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： According to example embodiments, a read method of a nonvolatile memory device includes Disclosed is a read method of a nonvolatile memory device which includes selecting one of a plurality of vertical strings in a nonvolatile memory device, judging a channel length between a common source line and a selected one of the plurality of vertical strings, selecting a sensing manner corresponding to the judged channel length, and performing a sensing operation according to the selected sensing manner. The plurality of vertical strings may extend in a direction perpendicular to a substrate of the nonvolatile memory device.

摘要翻译： 根据示例实施例，非易失性存储器件的读取方法包括：非易失性存储器件的读取方法，其包括选择非易失性存储器件中的多个垂直条之一，判断公共源极线和 选择多个垂直串中的一个，选择与所判断的信道长度相对应的感测方式，以及根据所选择的感测方式执行感测操作。 多个垂直线可以在垂直于非易失性存储器件的衬底的方向上延伸。

公开(公告)号：US08971114B2

公开(公告)日：2015-03-03

申请号：US13368769

申请日：2012-02-08

申请人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

发明人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC分类号： G11C16/04 ,  G11C16/08 ,  H01L27/115

CPC分类号： G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

摘要翻译： 非易失性存储器件包括具有连接在衬底和多个位线之间并由选择线选择的多个单元串的存储单元阵列，以及配置成在至少两个方向上驱动选择线的选通电路。

公开(公告)号：US20120039130A1

公开(公告)日：2012-02-16

申请号：US13152776

申请日：2011-06-03

申请人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

发明人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

IPC分类号： G11C16/10

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

摘要翻译： 非易失性存储器件通道升压方法，其中至少两个串连接到一个位线，所述通道升压方法包括将初始通道电压施加到所选存储器块中的串的通道，每个具有未编程的浮动禁止串 字符串之间的单元格，以及浮动禁止字符串的增强通道。

公开(公告)号：US20160042792A1

公开(公告)日：2016-02-11

申请号：US14887595

申请日：2015-10-20

申请人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

发明人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC分类号： G11C16/04 ,  G11C16/08

CPC分类号： G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

公开(公告)号：US09666283B2

公开(公告)日：2017-05-30

申请号：US15152692

申请日：2016-05-12

申请人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

发明人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC分类号： G11C16/04 ,  G11C16/08 ,  H01L27/1157 ,  H01L27/11582 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565

CPC分类号： G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

公开(公告)号：US09349455B2

公开(公告)日：2016-05-24

申请号：US14887595

申请日：2015-10-20

申请人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

发明人： Kyung-Hwa Kang ,  Sang-Wan Nam ,  Donghyuk Chae ,  ChiWeon Yoon

IPC分类号： G11C16/04 ,  G11C16/08 ,  H01L27/115

CPC分类号： G11C16/0483 ,  G11C16/0466 ,  G11C16/08 ,  G11C16/24 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

公开(公告)号：US08493789B2

公开(公告)日：2013-07-23

申请号：US13152776

申请日：2011-06-03

申请人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-won Yun

发明人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-won Yun

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

摘要翻译： 非易失性存储器件通道升压方法，其中至少两个串连接到一个位线，所述通道升压方法包括将初始通道电压施加到所选存储器块中的串的通道，每个具有未编程的浮动禁止串 字符串之间的单元格，以及浮动禁止字符串的增强通道。

公开(公告)号：US08654587B2

公开(公告)日：2014-02-18

申请号：US13920691

申请日：2013-06-18

申请人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

发明人： ChiWeon Yoon ,  Donghyuk Chae ,  Sang-Wan Nam ,  Sung-Won Yun

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3418 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.

摘要翻译： 非易失性存储器件通道升压方法，其中至少两个串连接到一个位线，所述通道升压方法包括将初始通道电压施加到所选存储器块中的串的通道，每个具有未编程的浮动禁止串 字符串之间的单元格，以及浮动禁止字符串的增强通道。

公开(公告)号：US09812206B2

公开(公告)日：2017-11-07

申请号：US14162905

申请日：2014-01-24

申请人： Sang-Wan Nam ,  Kitae Park

发明人： Sang-Wan Nam ,  Kitae Park

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/16 ,  G11C16/34 ,  G11C16/08 ,  G11C16/10

CPC分类号： G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16 ,  G11C16/3427

摘要： A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.