摘要:
An information processing element for processing information with a function of neural network includes a semiconductor integrated circuit element portion comprising a plurality of neuron circuit regions constituting a neuron function among the neural network function, a molecular film element having a light-electricity function, provided on the circuit element portion, and the combination between the plurality of neurons is realized by utilizing a photoconductivity property of the molecular film element.
摘要:
A visual information processing device has a pair of neural networks which respectively comprise an upper layer and a lower layer of the device. Each of the pair of neural networks comprises a semiconductor integrated circuit having a plurality of neuron circuit regions which are disposed in a matrix form, each of the neuron circuit regions performing a neuron function; a molecule film having a photoelectric function and provided on the semiconductor integrated circuit, the molecule film having (i) a plurality of T.sub.ij signal input sections each performing a wiring function among the plurality of neuron circuit regions, in each of which a T.sub.ij signal representing the bonding strength among the plurality of neuron circuit regions is optically written, and (ii) a plurality of video input sections each performing a sensor function of sensing a visual image in which one pixel corresponds to one neuron circuit region; and a wiring for electrically connecting the semiconductor integrated circuit and the molecule film. Each of the plurality of neuron circuit regions is bonded with the neighboring neuron circuit regions in each of the pair of neural networks comprising the upper and lower layers, and each of the plurality of neuron circuit regions is bonded with the corresponding one between the pair of neural networks.
摘要:
A visual information processing device having a neural network function and capable of visual information processing comprises a semiconductor integrated circuit device section equipped with a plurality of neuronic circuit regions realizing a neuron function included in the neural network function, and first and second molecular film sections provided on the integrated circuit device section. The first molecular film section comprises a light-receiving molecular film section including Tij input elements having a photoelectric function and to which coupling strength levels (Tij) between the plurality of neuronic circuit regions are optically written to realize electric connection between the neuronic circuit regions and image input elements for sensing visual images, each neuronic circuit region corresponding to one pixel. The second molecular film section comprises a light-emitting molecular film section including Tij signal output elements having a light-emitting function to output Tij matrix signals as matrix light emission patterns.
摘要:
A visual information processing device having a neural network function and capable of visual information processing comprises a semiconductor integrated circuit section equipped with a plurality of neuronic circuit regions realizing a neuron function included in the neural network function, and first and second molecular film sections provided on the integrated circuit section. The first molecular film section comprises a light-receiving molecular film section including Tij input elements having a photoelectric function and to which coupling strength levels (Tij) between the plurality of neuronic circuit regions are optically written to realize electric connection between the neuronic circuit regions and image input elements for sensing visual images, each neuronic circuit region corresponding to one pixel. The second molecular film section comprises a light-emitting molecular film section including Tij signal output elements having a light emitting function to output Tij matrix signals as matrix light emission patterns.
摘要:
A photoresponsive element utilizing a molecular heterojunction includes a first redox material film, a second redox material film having a different redox potential from that of the first redox material film and disposed in contact with the first redox material film, a first electrode connected to the first redox material film, and a second electrode connected to the second redox material film. The photoresponsive element is photoconductive and photovoltaic.
摘要:
Disclosed herein is an electronic device including a redox electrical element formed with redox materials such as a flavin derivative and a porphyrin derivative. The size of this electronic device can be reduced to a hyperfine level. By utilizing this electronic device, furthermore, a high-speed integrated circuit of high density can be obtained.
摘要:
An organic electric-field switching device has transparent or semitransparent upper electrodes and second insulating film so as to bias an electric field on a hetero-junction membrane formed on a lower electrode, in which the doping speed of a carrier is fast, and the switching device can be operated as the solid-state device and can be easily formed on a semiconductor made of silicon and the like. Therefore, the degree of integration of the device can be rapidly increased due to its multilayered structure.
摘要:
An organic electronic element material has been produced by modifying cytochrome c551 and cytochrome c552 by bonding at least a second electron transfer functional group to an amino acid residue of the cytochrome. The residue for attachment of the additional electron transfer groups could be introduced by genetic engineering or generated by chemical modification. A plurality of different electron transfer groups can be introduced to provide different redox potentials. Electron transfer can be caused to occur between the functional groups on the modified cytochromes to provide a desired electric property such as rectification, or switching in response to light.
摘要:
The present invention relates to a redox electric element circuit formed by using oxidation-reduction substance such as electron-transport protein or the like. Oxidation-reduction substance arranged between redox electric elements and the like is inactivated by energy beam irradiation to form insulating matter, so that wirings and element separation structure are established between redox electric elements and the like.
摘要:
Layers constituting a rectifier or transistor element are respectively formed by oxidation-reduction substances so that a redox potential difference is provided between adjacent layers. The oxidation-reduction substances are selected from biogenic redox protein, pseudo-redox protein and the like. The element is implemented in hyperfine size in molecular level, so that an integrated circuit of super-high density can be attained by using the element.