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20 条记录 (耗时 0.019 秒)

    METHOD FOR PATTERN FORMATION, METHOD AND COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, AND RESIST UNDERLAYER FILM
    4.
    发明申请
    METHOD FOR PATTERN FORMATION, METHOD AND COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, AND RESIST UNDERLAYER FILM 有权
    用于图形形成的方法，用于电阻膜形成的方法和组合物，以及耐蚀层膜

    公开(公告)号：US20120129353A1

    公开(公告)日：2012-05-24

    申请号：US13246915

    申请日：2011-09-28

    申请人： Shin-ya MINEGISHI ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

    发明人： Shin-ya MINEGISHI ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

    IPC分类号： H01L21/311 ,  C08K5/07 ,  H01L21/312

    CPC分类号： C09D161/14 ,  C08K5/42 ,  C08L101/02 ,  G03F7/094 ,  G03F7/11 ,  H01L21/31144

    摘要： Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.

    摘要翻译： 本发明提供的方法包括：（1）使用形成抗蚀剂下层膜的组合物在待处理基板的上表面侧形成抗蚀剂下层膜，该组合物含有（A）具有基团的化合物 由下式（1）表示; （2）通过在抗蚀剂下层膜上涂布抗蚀剂组合物形成抗蚀剂涂膜; （3）通过用辐射选择性地照射抗蚀剂涂膜来使抗蚀剂涂膜曝光; （4）通过显影曝光的抗蚀剂涂膜形成抗蚀剂图案; 和（5）通过使用抗蚀剂图案作为掩模对抗蚀剂下层膜和基板进行依次干蚀刻，在要加工的基板上形成预定图案。

    Semiconductor light beam position sensor element and a position sensor and a picture image input device each using the same
    6.
    发明授权
    Semiconductor light beam position sensor element and a position sensor and a picture image input device each using the same 失效
    半导体光束位置传感器元件和位置传感器以及各自使用的图像输入装置

    公开(公告)号：US5025297A

    公开(公告)日：1991-06-18

    申请号：US320149

    申请日：1989-03-07

    申请人： Satoru Murakami ,  Minori Yamaguchi ,  Akimine Hayashi ,  Masataka Kondo ,  Yoshihisa Tawada

    发明人： Satoru Murakami ,  Minori Yamaguchi ,  Akimine Hayashi ,  Masataka Kondo ,  Yoshihisa Tawada

    IPC分类号： G01B11/00 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/105 ,  H01L31/16

    CPC分类号： H01L31/02024 ,  H01L31/022466 ,  H01L31/03921 ,  H01L31/1055 ,  Y02E10/50

    摘要： A transparent semiconductor light beam position sensor element comprises a semiconductor layer consisting of p-, i- and n-type semiconductor layers successively bonded in junction and an electrically conductive layer disposed on either side of the semiconductive layer, at least one of the conductive layers being material transparent material, at least the other conductive layer and the semiconductor layer being provided with a multiplicity of common apertures running in the thickness direction and at least one conductive layer being provided with one pair or two pairs of electrodes of opposite polarities as disposed in its marginal regions. A position sensor utilizing the sensor element comprises a light source capable of varying the position of incidence of light on the position sensor element and a means for detecting the level of light incident on the element and holding the level constant, wherein the point of incidence of light can be identified from the photoelectric current output from one electrode of the electrode pair. A picture image input device utilizing the semiconductor light beam position sensor element further comprises a means for outputting a position signal representative of the point of incidence of light on the sensor element according to the photoelectric current output derived from the electrode pair and a means for outputting a bright dark signal representative of the intensity of light incident on the sensor element after passing or being reflected by an original according to the photoelectric current output derived from the electrode pair.

    Method for pattern formation, method and composition for resist underlayer film formation, and resist underlayer film
    7.
    发明授权
    Method for pattern formation, method and composition for resist underlayer film formation, and resist underlayer film 有权
    图案形成方法，抗蚀剂下层膜形成的方法和组合物以及抗蚀剂下层膜

    公开(公告)号：US09040232B2

    公开(公告)日：2015-05-26

    申请号：US13246915

    申请日：2011-09-28

    申请人： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

    发明人： Shin-ya Minegishi ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

    IPC分类号： G03F7/20 ,  H01L21/311 ,  G03F7/09 ,  G03F7/11 ,  C08K5/42 ,  C08L101/02

    CPC分类号： C09D161/14 ,  C08K5/42 ,  C08L101/02 ,  G03F7/094 ,  G03F7/11 ,  H01L21/31144

    摘要： Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.

    摘要翻译： 本发明提供的方法包括：（1）使用形成抗蚀剂下层膜的组合物在待处理基板的上表面侧形成抗蚀剂下层膜，该组合物含有（A）具有基团的化合物 由下式（1）表示; （2）通过在抗蚀剂下层膜上涂布抗蚀剂组合物形成抗蚀剂涂膜; （3）通过用辐射选择性地照射抗蚀剂涂膜来使抗蚀剂涂膜曝光; （4）通过显影曝光的抗蚀剂涂膜形成抗蚀剂图案; 和（5）通过使用抗蚀剂图案作为掩模对抗蚀剂下层膜和基板进行依次干蚀刻，在要加工的基板上形成预定图案。

    Position sensor and picture image input device
    9.
    发明授权
    Position sensor and picture image input device 失效
    位置传感器和图像输入设备

    公开(公告)号：US5126815A

    公开(公告)日：1992-06-30

    申请号：US609284

    申请日：1990-11-05

    申请人： Satoru Murakami ,  Minori Yamaguchi ,  Akimine Hayashi ,  Masataka Konda ,  Yoshihisa Tawada

    发明人： Satoru Murakami ,  Minori Yamaguchi ,  Akimine Hayashi ,  Masataka Konda ,  Yoshihisa Tawada

    IPC分类号： G01B11/00 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/105 ,  H01L31/16

    CPC分类号： H01L31/02024 ,  H01L31/022466 ,  H01L31/03921 ,  H01L31/1055 ,  Y02E10/50

    摘要： A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductive layers is made of a transparent material, and at least the other conductive layer and the semiconductor layer are provided with a plurality of common apertures extending in the thickness direction. At least one of the conductor layers is provided with one or two pairs of electrodes of opposite polarity and positioned in its marginal regions. The sensor element is light transparent. A feedback circuit is provided to insure that the incident light is constant.

    摘要翻译： 半导体光束位置传感器元件包括连续形成的p型，i型和n型半导体层的半导体层和在半导体层的任一侧上的导电层。 至少一个导电层由透明材料制成，并且至少另一导电层和半导体层设置有沿厚度方向延伸的多个公共孔。 至少一个导体层设置有一对或两对相反极性的电极，并位于其边缘区域。 传感器元件透明。 提供反馈电路以确保入射光是恒定的。