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    Apparatus for growing group II-VI mixed compound semiconductor
    2.
    发明授权
    Apparatus for growing group II-VI mixed compound semiconductor 失效
    用于生长组II-VI混合化合物半导体的装置

    公开(公告)号：US5431738A

    公开(公告)日：1995-07-11

    申请号：US202584

    申请日：1994-02-28

    申请人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    发明人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    IPC分类号： C30B25/02 ,  C30B25/14 ,  C23C16/00

    CPC分类号： C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/48

    摘要： A method or growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

    摘要翻译： 一种方法或生长混合化合物半导体层包括以下步骤：提供反应室，该反应室包括可旋转的基底载物台，多个沿一行排列的喷嘴，该喷嘴垂直于基底表面布置， 至少在喷嘴对准方向上并平行于衬底表面; 将衬底设置在围绕其轴线旋转的衬底台上; 通过喷嘴将混合源气体流入反应室，从而根据基板旋转的中心轴线与喷嘴之间的距离来控制流过每个喷嘴的混合源气体中最活性气体的流量 ; 并加热衬底。 用于应用上述方法的装置包括用于移动衬底台的特定特征。

    Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor
    3.
    发明授权
    Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor 失效
    生产II-IV族混合化合物半导体的方法及其使用的装置

    公开(公告)号：US5324386A

    公开(公告)日：1994-06-28

    申请号：US850023

    申请日：1992-03-12

    申请人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    发明人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    IPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/10

    CPC分类号： C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/48

    摘要： A method of growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

    摘要翻译： 一种生长混合化合物半导体层的方法包括以下步骤：提供一个反应室，该反应室包括可转动的基底载物台，多个沿一行排列的喷嘴，该喷嘴垂直于基片表面布置， 至少在喷嘴对准方向上并平行于衬底表面; 将衬底设置在围绕其轴线旋转的衬底台上; 通过喷嘴将混合源气体流入反应室，从而控制流过每个喷嘴的混合源气体中最活泼气体的流速，这取决于基板旋转的中心轴线与喷嘴之间的距离 ; 并加热衬底。 用于应用上述方法的装置包括用于移动衬底台的特定特征。

    Apparatus for growing mixed compound semiconductor and growth method using the same
    4.
    发明授权
    Apparatus for growing mixed compound semiconductor and growth method using the same 失效
    用于生长混合化合物半导体的装置及使用其的生长方法

    公开(公告)号：US06218212B1

    公开(公告)日：2001-04-17

    申请号：US08198641

    申请日：1994-02-18

    申请人： Tetsuo Saito ,  Hironori Nishino ,  Satoshi Murakami ,  Yoichiro Sakachi

    发明人： Tetsuo Saito ,  Hironori Nishino ,  Satoshi Murakami ,  Yoichiro Sakachi

    IPC分类号： H01L2100

    CPC分类号： C23C16/45504 ,  C23C16/306 ,  C23C16/4482 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45591 ,  C30B25/02 ,  C30B25/10 ,  C30B25/14 ,  C30B29/48

    摘要： An apparatus for growing a mixed compound semiconductor layer utilizing three or more source gases. The apparatus includes a horizontal type reactor chamber. The reactor chamber includes a partition plate separating an upstream region of the reactor chamber into an upper region and a lower region. The upper and lower regions are joined together forming a growth region in a downstream region of the reactor chamber. First and second inlet ports are provided at an upstream end of the lower region for admitting first and second source gases, respectively. A third inlet port is provided at an upstream end of the upper region for admitting a third source gas. An outlet port is provided at a downstream end of the growth region for exhaust. A substrate stage is arranged in the growth region so that the substrate surface is exposed to the growth region and forms a smooth surface for allowing a laminar gas flow.

    摘要翻译： 一种利用三种或更多种源气生长混合化合物半导体层的装置。 该装置包括一个卧式反应室。 反应室包括将反应器室的上游区分成上部区域和下部区域的分隔板。 上部和下部区域连接在一起，形成在反应室的下游区域中的生长区域。 第一和第二入口端口设置在下部区域的上游端，用于分别允许第一和第二源气体。 第三入口端口设置在上部区域的上游端，用于允许第三源气体。 出口端口设置在用于排气的生长区域的下游端。 衬底台布置在生长区域中，使得衬底表面暴露于生长区域并形成用于允许层流气流的光滑表面。

    Manufacturing method of semiconductor device
    5.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US06767782B2

    公开(公告)日：2004-07-27

    申请号：US10082311

    申请日：2002-02-26

    申请人： Takeshi Saikawa ,  Ryohei Maeno ,  Sadayuki Okudaira ,  Tetsuo Saito ,  Tsuyoshi Tamaru ,  Kazutoshi Ohmori

    发明人： Takeshi Saikawa ,  Ryohei Maeno ,  Sadayuki Okudaira ,  Tetsuo Saito ,  Tsuyoshi Tamaru ,  Kazutoshi Ohmori

    IPC分类号： H01L218238

    CPC分类号： H01L21/76801 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  Y10S438/906

    摘要： Charge-up damages to a substrate are reduced in a manufacturing process using plasma, and the reliability of a semiconductor device is improved. By forming an insulating film on the back of a substrate before a step of forming a first wiring layer, even if a plasma CVD method, a sputtering method, or a dry-etching method is used in a wiring-forming step executed later, then it is possible to suppress electric charges which are generated on the substrate and which flow to the ground potential through the substrate, and to prevent damages to the substrate due to charge-up.

    摘要翻译： 在使用等离子体的制造工艺中，对基板的充电损坏减少，并且提高了半导体器件的可靠性。通过在形成第一布线层的步骤之前在基板背面形成绝缘膜，即使 在稍后执行的布线形成步骤中使用等离子体CVD法，溅射法或干蚀刻法，则可以抑制在基板上产生的电荷，并且通过基板流向接地电位， 并防止由于充电而损坏基板。

    Wireless communication system and data storage medium
    6.
    发明授权
    Wireless communication system and data storage medium 失效
    无线通信系统和数据存储介质

    公开(公告)号：US5914980A

    公开(公告)日：1999-06-22

    申请号：US717017

    申请日：1996-09-20

    申请人： Tsuneshi Yokota ,  Seiji Ohura ,  Takanobu Ishibashi ,  Hiroyasu Uchida ,  Takafumi Watanabe ,  Tetsuo Saito

    发明人： Tsuneshi Yokota ,  Seiji Ohura ,  Takanobu Ishibashi ,  Hiroyasu Uchida ,  Takafumi Watanabe ,  Tetsuo Saito

    IPC分类号： G06K7/00 ,  H04B1/707 ,  H04B15/00

    CPC分类号： H04B1/707 ,  G06K7/0008

    摘要： A wireless communication system performs wireless transmitting and receiving of data between first and second communication devices. The device transmits from the first communication device to the second communication device a prescribed signal by a prescribed carrier signal having a prescribed carrier frequency. The prescribed signal transmitted from the first communication device is received in the second communication device. The device generates in the second communication device a signal of prescribed frequency which is phase synchronous with the prescribed carrier signal. Transmission data is spread spectrum modulated using the signal of prescribed frequency generated in the generating step. The spread spectrum modulated signal is transmitted from the second communication device to the first communication device. The first communication device receives the spread spectrum modulated signal transmitted from the second communication device.

    摘要翻译： 无线通信系统在第一和第二通信设备之间执行数据的无线发送和接收。 设备通过具有规定载波频率的规定载波信号，从第一通信设备向第二通信设备发送规定的信号。 在第二通信设备中接收从第一通信设备发送的规定信号。 该设备在第二通信设备中产生与规定的载波信号相位同步的规定频率的信号。 使用在生成步骤中生成的规定频率的信号对发送数据进行扩频调制。 扩频调制信号从第二通信设备发送到第一通信设备。 第一通信设备接收从第二通信设备发送的扩频调制信号。

    Image processing apparatus and method for performing smoothing processing for each of different colors
    7.
    发明授权
    Image processing apparatus and method for performing smoothing processing for each of different colors 失效
    用于对每种不同颜色进行平滑处理的图像处理装置和方法

    公开(公告)号：US5854689A

    公开(公告)日：1998-12-29

    申请号：US953750

    申请日：1997-10-17

    申请人： Tetsuo Saito

    发明人： Tetsuo Saito

    IPC分类号： H04N1/58 ,  H04N1/10 ,  H04N1/46

    CPC分类号： H04N1/58

    摘要： A color printer for high-quality image recording. The printer comprises printer controller 200 having image memories (video RAM's) and printer engine 300. Memory selector 2005 changes over the image memory for forming image data by color component, and outputs a color designation signal CRCD indicative of a currently-used image memory. The CRCD signal value is "00" to indicate Y image memory 2001; "01", M image memory 2002; "10", C image memory 2003; and "11", K image memory 2004. Thus the CRCD indicates the color of the current image memory. Upon smoothing, VDO signal processor 302 changes over the smoothing logic based on the CRCD signal, accordingly, an appropriate smoothing logic for each color component image data can be applied.

    摘要翻译： 彩色打印机，用于高质量的图像记录。 打印机包括具有图像存储器（视频RAM）和打印机引擎300的打印机控制器200.存储器选择器2005通过颜色分量改变用于形成图像数据的图像存储器，并输出指示当前使用的图像存储器的颜色指定信号CRCD。 CRCD信号值为“00”，表示Y图像存储器2001; “01”，M图像存储器2002; “10”，C图像存储器2003; 和“11”，K图像存储器2004.因此，CRCD指示当前图像存储器的颜色。 在平滑化之后，VDO信号处理器302基于CRCD信号改变平滑逻辑，因此，可以应用每个颜色分量图像数据的适当的平滑逻辑。

    Image smoothing using selection among plural pre-stored pixel patterns as smoothed data
    10.
    发明授权
    Image smoothing using selection among plural pre-stored pixel patterns as smoothed data 失效
    使用多个预先存储的像素图案之间的选择作为平滑数据进行图像平滑

    公开(公告)号：US5652660A

    公开(公告)日：1997-07-29

    申请号：US430161

    申请日：1995-04-27

    申请人： Kaoru Seto ,  Kiyoshi Kanaiwa ,  Michio Itoh ,  Hiroshi Mano ,  Hiromichi Yamada ,  Atsushi Kashihara ,  Takashi Kawana ,  Hiroshi Atobe ,  Tetsuo Saito

    发明人： Kaoru Seto ,  Kiyoshi Kanaiwa ,  Michio Itoh ,  Hiroshi Mano ,  Hiromichi Yamada ,  Atsushi Kashihara ,  Takashi Kawana ,  Hiroshi Atobe ,  Tetsuo Saito

    IPC分类号： G06K15/12 ,  H04N1/387 ,  G01D15/14 ,  G06K9/40 ,  G06K9/46

    CPC分类号： G06K15/1214 ,  G06K15/128 ,  G06K2215/0011 ,  G06K2215/0057 ,  G06K2215/006 ,  G06K2215/0071

    摘要： Binary data (VDO) developed to a dot pattern are sequentially stored in line memories (1-9). A processing circuit (43) is constituted by a logic calculation circuit, and determines an edge portion of an image or a halftone image on the basis of 11.times.9 pixel data in shift registers (34-43). When the edge portion of an image is determined, data of a pixel of interest is converted to data that can print a smooth edge portion. Changed data (VDOM) is converted again according to the type of toner. The converted signal is supplied to a laser driver of a printer, and a printing operation is performed by scanning a laser. A resolution setting unit (1700) receives a resolution setting command from an external apparatus (1300), and sets a designated resolution in a printer (1200) according to the resolution setting command. The resolution setting unit (1700) divides one pixel into an optimal number of pixel sections on the basis of the designated resolution, and sets a logic circuit for performing optimal smoothing processing for divided data in a smoothing unit (1018). Bit map development based on code data supplied from the external apparatus (1300), and smoothing processing according to a smoothing logic, are performed.

    摘要翻译： 显影为点图案的二进制数据（VDO）被顺序存储在行存储器（1-9）中。 处理电路（43）由逻辑运算电路构成，根据移位寄存器（34-43）中的11×9像素数据，确定图像的边缘部分或半色调图像。 当确定图像的边缘部分时，感兴趣的像素的数据被转换成能够打印平滑边缘部分的数据。 更改的数据（VDOM）将根据墨粉类型再次进行转换。 转换的信号被提供给打印机的激光驱动器，并且通过扫描激光器执行打印操作。 分辨率设定单元（1700）从外部设备（1300）接收分辨率设置命令，并根据分辨率设置命令在打印机（1200）中设置指定的分辨率。 分辨率设置单元（1700）根据指定的分辨率将一个像素划分为最佳数量的像素部分，并且设置用于对平滑单元（1018）中的分割数据执行最佳平滑处理的逻辑电路。 执行基于从外部设备（1300）提供的代码数据和根据平滑逻辑的平滑处理的位图开发。