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    Apparatus for growing group II-VI mixed compound semiconductor
    1.
    发明授权
    Apparatus for growing group II-VI mixed compound semiconductor 失效
    用于生长组II-VI混合化合物半导体的装置

    公开(公告)号：US5431738A

    公开(公告)日：1995-07-11

    申请号：US202584

    申请日：1994-02-28

    申请人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    发明人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    IPC分类号： C30B25/02 ,  C30B25/14 ,  C23C16/00

    CPC分类号： C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/48

    摘要： A method or growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

    摘要翻译： 一种方法或生长混合化合物半导体层包括以下步骤：提供反应室，该反应室包括可旋转的基底载物台，多个沿一行排列的喷嘴，该喷嘴垂直于基底表面布置， 至少在喷嘴对准方向上并平行于衬底表面; 将衬底设置在围绕其轴线旋转的衬底台上; 通过喷嘴将混合源气体流入反应室，从而根据基板旋转的中心轴线与喷嘴之间的距离来控制流过每个喷嘴的混合源气体中最活性气体的流量 ; 并加热衬底。 用于应用上述方法的装置包括用于移动衬底台的特定特征。

    Apparatus for growing mixed compound semiconductor and growth method using the same
    3.
    发明授权
    Apparatus for growing mixed compound semiconductor and growth method using the same 失效
    用于生长混合化合物半导体的装置及使用其的生长方法

    公开(公告)号：US06218212B1

    公开(公告)日：2001-04-17

    申请号：US08198641

    申请日：1994-02-18

    申请人： Tetsuo Saito ,  Hironori Nishino ,  Satoshi Murakami ,  Yoichiro Sakachi

    发明人： Tetsuo Saito ,  Hironori Nishino ,  Satoshi Murakami ,  Yoichiro Sakachi

    IPC分类号： H01L2100

    CPC分类号： C23C16/45504 ,  C23C16/306 ,  C23C16/4482 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45591 ,  C30B25/02 ,  C30B25/10 ,  C30B25/14 ,  C30B29/48

    摘要： An apparatus for growing a mixed compound semiconductor layer utilizing three or more source gases. The apparatus includes a horizontal type reactor chamber. The reactor chamber includes a partition plate separating an upstream region of the reactor chamber into an upper region and a lower region. The upper and lower regions are joined together forming a growth region in a downstream region of the reactor chamber. First and second inlet ports are provided at an upstream end of the lower region for admitting first and second source gases, respectively. A third inlet port is provided at an upstream end of the upper region for admitting a third source gas. An outlet port is provided at a downstream end of the growth region for exhaust. A substrate stage is arranged in the growth region so that the substrate surface is exposed to the growth region and forms a smooth surface for allowing a laminar gas flow.

    摘要翻译： 一种利用三种或更多种源气生长混合化合物半导体层的装置。 该装置包括一个卧式反应室。 反应室包括将反应器室的上游区分成上部区域和下部区域的分隔板。 上部和下部区域连接在一起，形成在反应室的下游区域中的生长区域。 第一和第二入口端口设置在下部区域的上游端，用于分别允许第一和第二源气体。 第三入口端口设置在上部区域的上游端，用于允许第三源气体。 出口端口设置在用于排气的生长区域的下游端。 衬底台布置在生长区域中，使得衬底表面暴露于生长区域并形成用于允许层流气流的光滑表面。

    Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor
    4.
    发明授权
    Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor 失效
    生产II-IV族混合化合物半导体的方法及其使用的装置

    公开(公告)号：US5324386A

    公开(公告)日：1994-06-28

    申请号：US850023

    申请日：1992-03-12

    申请人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    发明人： Satoshi Murakami ,  Yoichiro Sakachi ,  Hironori Nishino ,  Tetsuo Saito ,  Kenji Maruyama

    IPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/10

    CPC分类号： C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/48

    摘要： A method of growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.

    摘要翻译： 一种生长混合化合物半导体层的方法包括以下步骤：提供一个反应室，该反应室包括可转动的基底载物台，多个沿一行排列的喷嘴，该喷嘴垂直于基片表面布置， 至少在喷嘴对准方向上并平行于衬底表面; 将衬底设置在围绕其轴线旋转的衬底台上; 通过喷嘴将混合源气体流入反应室，从而控制流过每个喷嘴的混合源气体中最活泼气体的流速，这取决于基板旋转的中心轴线与喷嘴之间的距离 ; 并加热衬底。 用于应用上述方法的装置包括用于移动衬底台的特定特征。

    Infrared photodetector
    5.
    发明授权
    Infrared photodetector 有权
    红外光电探测器

    公开(公告)号：US08373155B2

    公开(公告)日：2013-02-12

    申请号：US12534421

    申请日：2009-08-03

    申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    IPC分类号： H01L31/09

    CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

    摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

    摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

    Signal reading method, signal reading circuit, and image sensor
    6.
    发明授权
    Signal reading method, signal reading circuit, and image sensor 有权
    信号读取方式，信号读取电路和图像传感器

    公开(公告)号：US08120687B2

    公开(公告)日：2012-02-21

    申请号：US12538019

    申请日：2009-08-07

    申请人： Hironori Nishino ,  Akira Sawada

    发明人： Hironori Nishino ,  Akira Sawada

    IPC分类号： H04N5/335

    CPC分类号： H04N5/357 ,  H04N5/341 ,  H04N5/37452 ,  H04N5/378

    摘要： A signal reading method successively outputs a read signal by scanning a voltage value of an integrating capacitor in an image sensor in which a plurality of sensor parts are arranged in a two-dimensional array made up of rows and columns and each sensor part includes the integrating capacitor accumulating a charge obtained by integrating a photocurrent output from a sensor. A first integration of the photocurrent using the integrating capacitor and a first sampling and holding using a sample and hold capacitor are performed in a first time interval, during a time of one frame made up of the first through third time intervals. A second integration of the photocurrent using the integrating capacitor is performed in the second time interval, and processes in the first and second time intervals are performed in common with respect to all of the sensor parts simultaneously. A vertical scan is started by selecting the row in an order starting from a first row.

    摘要翻译： 信号读取方法通过扫描图像传感器中的积分电容器的电压值连续地输出读取信号，其中多个传感器部件以行和列组成的二维阵列布置，并且每个传感器部分包括积分 电容器累积通过对来自传感器的光电流输出进行积分而获得的电荷。 在由第一至第三时间间隔构成的一帧期间，在第一时间间隔中执行使用积分电容器的光电流的第一积分和使用采样和保持电容器的第一采样和保持。 在第二时间间隔中执行使用积分电容器的光电流的第二积分，并且相对于所有传感器部件同时执行第一和第二时间间隔的处理。 通过从第一行开始的顺序选择行来开始垂直扫描。

    Multi-quantum well infrared photo-detector
    10.
    发明授权
    Multi-quantum well infrared photo-detector 失效
    多量子阱红外光电探测器

    公开(公告)号：US06504222B1

    公开(公告)日：2003-01-07

    申请号：US09473156

    申请日：1999-12-28

    申请人： Yoshihiro Miyamoto ,  Hironori Nishino ,  Yusuke Matsukura ,  Toshio Fujii

    发明人： Yoshihiro Miyamoto ,  Hironori Nishino ,  Yusuke Matsukura ,  Toshio Fujii

    IPC分类号： H01L3100

    CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/101

    摘要： A multi-quantum well infrared photo-detector, in which a plurality of multi-quantum well layers having respective sensitivities for different wavelength ranges of infrared are layered via a common contact layer. The infrared photo-detector includes a switch where one end is connected to the above common contact layer, and a current integration unit which is connected to the other end of the above switch. First and second voltages are applied to first and second contact layers at the opposite side of first and second multi-quantum well layer respectively. The above switch is conducted for a predetermined time so that either voltage between the above common contact layer and the first contact layer or voltage between the above common contact layer and the second contact layer becomes higher than the other, and the above current integration unit is charged or discharged by the current which flows in the above multi-quantum well layers.

    摘要翻译： 一种多量子阱红外光电检测器，其中通过公共接触层层叠具有用于红外线的不同波长范围的各自灵敏度的多个多量子阱层。 红外光检测器包括一端连接到上述公共接触层的开关，以及连接到上述开关的另一端的电流积分单元。 第一和第二电压分别施加到第一和第二多量子阱层的相反侧的第一和第二接触层。 上述开关进行预定时间，使得上述公共接触层和第一接触层之间的电压或上述公共接触层和第二接触层之间的电压变得高于另一个，并且上述电流积分单元是 由在上述多量子阱层中流动的电流充电或放电。