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公开(公告)号：US20090032143A1
公开(公告)日：2009-02-05
申请号：US12182231
申请日：2008-07-30
申请人： Scott G Walton , Darrin Leonhardt , Robert A. Meger , Richard F. Fernsler , Christopher Muratore
发明人： Scott G Walton , Darrin Leonhardt , Robert A. Meger , Richard F. Fernsler , Christopher Muratore
IPC分类号： C23C8/36 , C23C16/513 , C23C8/24
CPC分类号： H01J37/3233 , C23C8/36 , H01J37/32009 , H01J2237/3387 , H05H1/26 , H05H2245/123
摘要： An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
摘要翻译： 电子束增强氮化系统，其使高能电子束通过氮气，形成能够将氮离子和自由基输送到被氮化的衬底的低电子温度等离子体。 衬底可以安装在电极上，并且衬底可被偏置和加热。
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公开(公告)号：US20090314633A1
公开(公告)日：2009-12-24
申请号：US12548510
申请日：2009-08-27
CPC分类号： C23C14/3478
摘要： This invention provides a means to deposit thin films and coatings on a substrate using an electron beam generated plasma. The plasma can be used as an ion source in sputter applications, where the ions are used to liberate material from a target surface which can then condense on a substrate to form the film or coating. Alternatively, the plasma may be combined with existing deposition sources including those based on sputter or evaporation techniques. In either configuration, the plasma serves as a source of ion and radical species at the growing film surface in reactive deposition processes. The electron beam large area deposition system (EBELADS) is a new approach to the production of thin films or coatings up to and including several square meters.
摘要翻译： 本发明提供了使用电子束产生的等离子体在薄膜上沉积薄膜和涂层的方法。 等离子体可用作溅射应用中的离子源，其中离子用于从目标表面释放材料，然后可将其冷凝在基底上以形成膜或涂层。 或者，等离子体可以与现有的沉积源组合，包括基于溅射或蒸发技术的沉积源。 在任一种配置中，等离子体在反应沉积过程中作为生长膜表面的离子和自由基物质的来源。 电子束大面积沉积系统（EBELADS）是生产直到并包括几平方米的薄膜或涂层的新方法。
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公开(公告)号：US20110308461A1
公开(公告)日：2011-12-22
申请号：US12857560
申请日：2010-08-17
CPC分类号： H01J37/3233 , C23C8/36 , H01J37/32009 , H01J2237/3387 , H05H1/26 , H05H2245/123
摘要： An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
摘要翻译： 电子束增强氮化系统，其使高能电子束通过氮气，形成能够将氮离子和自由基输送到被氮化的衬底的低电子温度等离子体。 衬底可以安装在电极上，并且衬底可被偏置和加热。
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公开(公告)号：USH2209H1
公开(公告)日：2008-02-05
申请号：US10825800
申请日：2004-04-14
IPC分类号： C23C14/32
摘要： A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.
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公开(公告)号：US20050230242A1
公开(公告)日：2005-10-20
申请号：US10825800
申请日：2004-04-14
IPC分类号： B05D3/06 , C23C14/02 , C23C14/20 , C23C14/32 , C23C14/34 , C23C14/35 , C23C16/00 , H05B31/26
CPC分类号： C23C14/022 , C23C14/205
摘要： A large area metallization pretreatment and surface activation system that uses an electron beam-produced plasma capable of delivering substantial ion and radical fluxes at low temperatures over large areas of an organic plastic or polymer material. The ion and radical fluxes physically and chemically alter the surface structure of the organic plastic or polymer material thereby improving the ability of a film to adhere to the material.
摘要翻译： 使用电子束产生的等离子体的大面积金属化预处理和表面活化系统，其能够在有机塑料或聚合物材料的大面积上在低温下输送大量离子和自由基熔剂。 离子和自由基通量物理和化学改变有机塑料或聚合物材料的表面结构，从而提高膜粘附到材料上的能力。
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公开(公告)号：US20050281958A1
公开(公告)日：2005-12-22
申请号：US10874002
申请日：2004-06-22
CPC分类号： H01J37/3233 , C23C8/36 , H01J37/32009 , H01J2237/3387 , H05H1/26 , H05H2245/123
摘要： An electron beam enhanced nitriding system that passes a high-energy electron beam through nitrogen gas to form a low electron temperature plasma capable of delivering nitrogen ions and radicals to a substrate to be nitrided. The substrate can be mounted on an electrode, and the substrate can be biased and heated.
摘要翻译： 电子束增强氮化系统，其使高能电子束通过氮气，形成能够将氮离子和自由基输送到被氮化的衬底的低电子温度等离子体。 衬底可以安装在电极上，并且衬底可被偏置和加热。
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公开(公告)号：US20150345010A1
公开(公告)日：2015-12-03
申请号：US14501994
申请日：2014-09-30
CPC分类号： C23C14/35 , C23C14/0623 , C23C14/3485 , C23C14/541 , H01J37/32724 , H01J37/3408 , H01J37/3426 , H01J37/345
摘要： Methods for magnetically enhanced physical vapor deposition are disclosed. The methods include providing a magnetically enhanced vapor deposition device defining a vapor deposition chamber, having a magnetic field source proximate a magnetron target that is positioned within the vapor deposition chamber and coupled to a power source, and having a substrate holder positioned within the vapor deposition chamber, placing a substrate in the substrate holder, activating the magnetic field source to provide a magnetic field that controls a charged particle flux within the physical vapor deposition chamber, and activating the power source thereby depositing a few-layer film of the material comprising the magnetron target onto the substrate. The few-layer film may be a transition metal dichalcogenide, such as MoS2.
摘要翻译： 公开了磁增强物理气相沉积的方法。 所述方法包括提供限定蒸气沉积室的磁性增强的气相沉积装置，其具有靠近磁控管靶的磁场源，所述磁控管位于气相沉积室内并且耦合到电源，并且具有位于气相沉积 将衬底放置在衬底保持器中，激活磁场源以提供控制物理气相沉积室内的带电粒子通量的磁场，并激活电源，从而沉积包含 磁控管靶到基板上。 少层膜可以是过渡金属二硫属元素，例如MoS 2。
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公开(公告)号：US20180308692A1
公开(公告)日：2018-10-25
申请号：US15962445
申请日：2018-04-25
申请人： Christopher Muratore , Michael E. McConney , Travis E. Shelton , Nicholas R. Glavin , John E. Bultman , Andrey A. Voevodin
发明人： Christopher Muratore , Michael E. McConney , Travis E. Shelton , Nicholas R. Glavin , John E. Bultman , Andrey A. Voevodin
CPC分类号： H01L21/02675 , H01L21/02422 , H01L21/02568 , H01L21/02631 , H01L29/24
摘要： Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
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公开(公告)号：US20230369046A1
公开(公告)日：2023-11-16
申请号：US18225994
申请日：2023-07-25
申请人： Christopher Muratore , Michael E. McConney , Travis E. Shelton , Nicholas R. Glavin , John E. Bultman , Andrey A. Voevodin
发明人： Christopher Muratore , Michael E. McConney , Travis E. Shelton , Nicholas R. Glavin , John E. Bultman , Andrey A. Voevodin
CPC分类号： H01L21/02675 , H01L29/24 , H01L21/02631 , H01L21/02422 , H01L21/02568 , H01L21/02485
摘要： Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
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公开(公告)号：US20200090933A1
公开(公告)日：2020-03-19
申请号：US16527326
申请日：2019-07-31
申请人： Christopher Muratore , Michael E. McConney , Travis E. Shelton , Nicholas R. Glavin , John E. Bultman , Andrey A. Voevodin
发明人： Christopher Muratore , Michael E. McConney , Travis E. Shelton , Nicholas R. Glavin , John E. Bultman , Andrey A. Voevodin
摘要： Methods of making molybdenum sulfide (MoS2) on a stretchable substrate are disclosed. The method includes magnetron sputtering MoS2 onto a stretchable substrate, such as a stretchable polymeric material, at low temperatures to form a film precursor, and illumination annealing the film precursor to form high quality MoS2. The illumination source may be a laser or other source of radiation. Also, two-dimensional nanoelectronic devices made by the methods and/or from the high quality MoS2 are disclosed.
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