公开(公告)号：US20090231301A1

公开(公告)日：2009-09-17

申请号：US12145958

申请日：2008-06-25

Applicant: Sean Chang ,  Chii-How Chang ,  Yang-Lin Chen

Inventor： Sean Chang ,  Chii-How Chang ,  Yang-Lin Chen

IPC: G06F3/045

CPC classification number: G06F3/045 ,  G06F3/044

Abstract: A touch panel includes a substrate, a resistive layer, a plurality of signal terminals, a conductive circuit layer, an insulation layer and a plurality of signal lines. The substrate has a touch area and a peripheral area. The signal terminals are disposed in the peripheral area and electrically connected to the resistive layer. The conductive circuit layer is disposed in the peripheral area and electrically connected to the resistive layer. The insulation layer is disposed on the signal terminals and the conductive circuit layer. The signal lines are disposed on the insulation layer and electrically connected to signal terminals, respectively.

Abstract translation: 触摸面板包括基板，电阻层，多个信号端子，导电电路层，绝缘层和多个信号线。 基板具有触摸区域和周边区域。 信号端子设置在周边区域中并电连接到电阻层。 导电电路层设置在外围区域中并与电阻层电连接。 绝缘层设置在信号端子和导电电路层上。 信号线分别设置在绝缘层上并与信号端子电连接。

公开(公告)号：US20090140990A1

公开(公告)日：2009-06-04

申请号：US12053335

申请日：2008-03-21

Applicant: Sean Chang ,  Chii-How Chang ,  Yang-Lin Chen

Inventor： Sean Chang ,  Chii-How Chang ,  Yang-Lin Chen

IPC: G06F3/041

CPC classification number: G06F3/041

Abstract: A touch panel includes a substrate, a conductive circuit layer, a resistive layer and a dielectric layer. The substrate has a touch area and a peripheral area surrounding the touch area. The conductive circuit layer is formed on the peripheral area of the substrate. The resistive layer covers the conductive circuit layer and the touch area of the substrate. The dielectric layer is formed on the resistive layer. The conductive circuit layer includes a plurality of signal terminals disposed on corner surfaces of the substrate as the corner electrodes of the conductive circuit layer.

Abstract translation: 触摸面板包括基板，导电电路层，电阻层和电介质层。 基板具有触摸区域和围绕触摸区域的周边区域。 导电电路层形成在基板的周边区域上。 电阻层覆盖基板的导电电路层和触摸区域。 电介质层形成在电阻层上。 导电电路层包括设置在基板的角面上的多个信号端子作为导电电路层的角电极。

公开(公告)号：US08305350B2

公开(公告)日：2012-11-06

申请号：US12110004

申请日：2008-04-25

Applicant: Sean Chang ,  Yang-Lin Chen

Inventor： Sean Chang ,  Yang-Lin Chen

IPC: G06F3/41

CPC classification number: G06F3/041 ,  G06F3/045

Abstract: A touch panel includes two transparent conductive films and at least one refractive index matching layer. The two transparent conductive films are disposed opposite to each other. The refractive index matching layer is disposed between the two transparent conductive films or disposed on one side of the transparent conductive film.

Abstract translation: 触摸面板包括两个透明导电膜和至少一个折射率匹配层。 两个透明导电膜彼此相对设置。 折射率匹配层设置在两个透明导电膜之间或者设置在透明导电膜的一侧上。

公开(公告)号：US20090188726A1

公开(公告)日：2009-07-30

申请号：US12110004

申请日：2008-04-25

Applicant: Sean Chang ,  Yang-Lin Chen

Inventor： Sean Chang ,  Yang-Lin Chen

IPC: G06F3/041

CPC classification number: G06F3/041 ,  G06F3/045

Abstract: A touch panel includes two transparent conductive films and at least one refractive index matching layer. The two transparent conductive films are disposed opposite to each other. The refractive index matching layer is disposed between the two transparent conductive films or disposed on one side of the transparent conductive film.

Abstract translation: 触摸面板包括两个透明导电膜和至少一个折射率匹配层。 两个透明导电膜彼此相对设置。 折射率匹配层设置在两个透明导电膜之间或者设置在透明导电膜的一侧上。

公开(公告)号：US20070252159A1

公开(公告)日：2007-11-01

申请号：US11790619

申请日：2007-04-26

Applicant: Sean Chang ,  Yang-Lin Chen

Inventor： Sean Chang ,  Yang-Lin Chen

IPC: H01L33/00

CPC classification number: H01L33/64 ,  H01L33/60 ,  H01L33/62 ,  H01L33/642 ,  H01L51/529 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting apparatus includes a substrate, an insulating layer and at least one light emitting device. The insulating layer is disposed over the substrate and has a patterned area exposing at least a portion of the substrate. The light emitting device is disposed over the substrate and is located in the patterned area.

Abstract translation: 发光装置包括基板，绝缘层和至少一个发光装置。 绝缘层设置在衬底上并且具有暴露衬底的至少一部分的图案区域。 发光器件设置在衬底上并且位于图案化区域中。

公开(公告)号：US20080112043A1

公开(公告)日：2008-05-15

申请号：US11898735

申请日：2007-09-14

Applicant: Sean Chang ,  Fang Ho ,  Yang-Lin Chen

Inventor： Sean Chang ,  Fang Ho ,  Yang-Lin Chen

IPC: G02F1/355

CPC classification number: G02F1/133621 ,  G02B5/201 ,  G02F2202/42

Abstract: An optical system includes a light source and a dielectric optical film. The light source generates at least one first light ray having a first spectral distribution, which has a plurality of first peaks with different levels. The dielectric optical film is disposed on an optical path of the first light ray and converts the first light ray into a second light ray, which has a second spectral distribution. The second spectral distribution has a plurality of second peaks with similar levels. In addition, a liquid crystal display apparatus is also disclosed.

Abstract translation: 光学系统包括光源和电介质光学膜。 光源产生具有第一光谱分布的至少一个第一光线，其具有多个具有不同电平的第一峰值。 电介质光学膜设置在第一光线的光路上，并将第一光线转换成具有第二光谱分布的第二光线。 第二光谱分布具有多个具有相似水平的第二峰。 此外，还公开了一种液晶显示装置。

公开(公告)号：US09659769B1

公开(公告)日：2017-05-23

申请号：US10972084

申请日：2004-10-22

Applicant: Bhadri Varadarajan ,  Sean Chang ,  James S. Sims ,  Guangquan Lu ,  David Mordo ,  Kevin Ilcisin ,  Mandar Pandit ,  Michael Carris

Inventor： Bhadri Varadarajan ,  Sean Chang ,  James S. Sims ,  Guangquan Lu ,  David Mordo ,  Kevin Ilcisin ,  Mandar Pandit ,  Michael Carris

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/477 ,  H01L21/26

CPC classification number: H01L21/02348 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/26 ,  H01L21/3105 ,  H01L21/477

Abstract: A highly tensile dielectric layer is generated on a heat sensitive substrate while not exceeding thermal budget constraints. Ultraviolet (UV) irradiation is used to produce highly tensile films to be used, for example, in strained NMOS transistor architectures. UV curing of as-deposited PECVD silicon nitride films, for example, has been shown to produce films with stresses of at least 1.65 E10 dynes/cm2. Other dielectric capping layer film materials show similar results. In transistor implementations, the stress from a source/drain region capping layer composed of such a film is uniaxially transferred to the NMOS channel through the source-drain regions to create tensile strain in the NMOS channel.

公开(公告)号：US20130330926A1

公开(公告)日：2013-12-12

申请号：US13888077

申请日：2013-05-06

Applicant: Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

Inventor： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

IPC: H01L21/48

CPC classification number: H01L21/486 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76865 ,  H01L21/76877

Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.

Abstract translation: 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。

公开(公告)号：US08460403B2

公开(公告)日：2013-06-11

申请号：US11982509

申请日：2007-11-02

Applicant: Michael Pozin ,  Sean Chang

Inventor： Michael Pozin ,  Sean Chang

IPC: H01M4/58

CPC classification number: H01M4/58 ,  H01M2/1235 ,  H01M4/0471 ,  H01M4/1397 ,  H01M4/364 ,  H01M4/581 ,  H01M4/5815 ,  H01M4/587 ,  H01M4/621 ,  H01M4/622 ,  H01M4/625 ,  H01M6/16 ,  H01M10/0587 ,  H01M2004/028 ,  Y10T29/49108 ,  Y10T29/49115

Abstract: A primary cell having an anode comprising lithium and a cathode comprising iron disulfide (FeS2) and carbon particles. The electrolyte comprises a lithium salt dissolved in a solvent mixture. Iron disulfide powder and carbon black is preferably premixed and stored. A cathode slurry is prepared comprising iron disulfide, carbon black, binder, and a liquid solvent. The mixture is coated onto a substrate and solvent evaporated leaving a dry cathode coating on the substrate. The cathode coating is then baked at elevated temperatures in atmosphere under partial vacuum or in an atmosphere of nitrogen or inert gas. The anode and cathode can be spirally wound with separator therebetween and inserted into the cell casing with electrolyte then added.

Abstract translation: 具有包含锂的阳极的主电池和包含二硫化铁（FeS 2）和碳颗粒的阴极。 电解质包含溶解在溶剂混合物中的锂盐。 二硫化铁粉末和炭黑优选预混合并储存。 制备包含二硫化铁，炭黑，粘合剂和液体溶剂的阴极浆料。 将混合物涂覆在基材上并蒸发溶剂，在基材上留下干燥的阴极涂层。 然后将阴极涂层在高温下在大气中在部分真空下或在氮气或惰性气体的气氛中进行烘烤。 阳极和阴极可以用分离器螺旋卷绕并插入电池壳体中，然后加入电解质。

公开(公告)号：US20120009785A1

公开(公告)日：2012-01-12

申请号：US12833823

申请日：2010-07-09

Applicant: Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

Inventor： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

IPC: H01L21/768 ,  C23F1/08

CPC classification number: C23F4/00 ,  C23C16/045 ,  C23C16/06 ,  H01L21/76877

Abstract: Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.

Abstract translation: 提供了用含钨材料填充高纵横比特征的方法和装置。 该方法包括提供部分制造的半导体衬底并且在衬底表面上沉积含钨层以部分填充一个或多个高纵横比特征。 该方法继续选择性地去除沉积层的一部分，使得在特征开口附近更多的材料在特征内部被移除。 在某些实施方案中，可以在质量传输限制条件下进行移除，在特征内可用蚀刻剂较少，而不是靠近其开口。 在引入处理室之前和/或在室内时，蚀刻剂物质被激活。 在具体实施方案中，活化物质的重组在除去期间基本上受到限制和/或控制，例如在小于约250℃和/或小于约5托下进行操作。