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    SUBSTRATE PLANARIZATION WITH IMPRINT MATERIALS AND PROCESSES
    1.
    发明申请
    SUBSTRATE PLANARIZATION WITH IMPRINT MATERIALS AND PROCESSES 有权
    基材平面化与印刷材料和工艺

    公开(公告)号：US20100173247A1

    公开(公告)日：2010-07-08

    申请号：US12350250

    申请日：2009-01-08

    申请人： Sean D. Burns ,  Colin J. Brodsky ,  Ryan L. Burns

    发明人： Sean D. Burns ,  Colin J. Brodsky ,  Ryan L. Burns

    IPC分类号： G03F7/027 ,  G03F7/20 ,  G03F7/36

    CPC分类号： G03F7/027 ,  G03F7/094 ,  G03F7/168

    摘要： The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.

    摘要翻译： 本发明涉及平面化材料及其在光刻中用于衬底平面化的方法。 在基板上形成平坦化组合物的平坦化层。 平坦化组合物含有至少一种芳族单体和至少一种非芳族单体。 基本平坦的表面与平坦化层接触。 平坦化层通过暴露于第一辐射或通过烘烤而固化。然后去除基本平坦的表面。 在平坦化层上形成光致抗蚀剂层。 将光致抗蚀剂层暴露于第二辐射，随后显影以在光致抗蚀剂层中形成浮雕图像。 然后将浮雕图像转移到基底中。

    Substrate planarization with imprint materials and processes
    2.
    发明授权
    Substrate planarization with imprint materials and processes 有权
    基板平面化与压印材料和工艺

    公开(公告)号：US08084185B2

    公开(公告)日：2011-12-27

    申请号：US12350250

    申请日：2009-01-08

    申请人： Sean D. Burns ,  Colin J. Brodsky ,  Ryan L. Burns

    发明人： Sean D. Burns ,  Colin J. Brodsky ,  Ryan L. Burns

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/26 ,  G03F7/40

    CPC分类号： G03F7/027 ,  G03F7/094 ,  G03F7/168

    摘要： The present invention relates to planarization materials and methods of using the same for substrate planarization in photolithography. A planarization layer of a planarization composition is formed on a substrate. The planarization composition contains at least one aromatic monomer and at least one non-aromatic monomer. A substantially flat surface is brought into contact with the planarization layer. The planarization layer is cured by exposing to a first radiation or by baking. The substantially flat surface is then removed. A photoresist layer is formed on the planarization layer. The photoresist layer is exposed to a second radiation followed by development to form a relief image in the photoresist layer. The relief image is then transferred into the substrate.

    摘要翻译： 本发明涉及平面化材料及其在光刻中用于衬底平面化的方法。 在基板上形成平坦化组合物的平坦化层。 平坦化组合物含有至少一种芳族单体和至少一种非芳族单体。 基本平坦的表面与平坦化层接触。 平坦化层通过暴露于第一辐射或通过烘烤而固化。 然后去除基本平坦的表面。 在平坦化层上形成光致抗蚀剂层。 将光致抗蚀剂层暴露于第二辐射，随后显影以在光致抗蚀剂层中形成浮雕图像。 然后将浮雕图像转移到基底中。

    STRUCTURE RESULTING FROM CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING)
    7.
    发明申请
    STRUCTURE RESULTING FROM CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING) 失效
    BARC（底部防反射涂层）化学收缩过程的结构

    公开(公告)号：US20120076982A1

    公开(公告)日：2012-03-29

    申请号：US13311638

    申请日：2011-12-06

    申请人： Todd Christopher Bailey ,  Colin J. Brodsky ,  Allen H. Gabor

    发明人： Todd Christopher Bailey ,  Colin J. Brodsky ,  Allen H. Gabor

    IPC分类号： B32B3/24 ,  G03F7/11

    CPC分类号： H01L21/76802 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24521 ,  Y10T428/249953

    摘要： A structure. The structure includes: a hole layer; a hole layer including a top hole layer surface, wherein the hole layer has a thickness in a first direction that is perpendicular to the hole layer surface; a bottom antireflective coating (BARC) layer on and in direct physical contact with the hole layer at the top hole layer surface; a photoresist layer on and in direct physical contact with the BARC layer, wherein a continuous hole in the first direction extends completely through the photoresist layer, the BARC layer, and the hole layer; and a polymerized hole shrinking region in direct physical contact with the photoresist layer at a lateral surface of the photoresist layer and with the hole layer at the top hole layer surface, wherein the hole shrinking region does not extend below the hole layer surface in a direction from the BARC layer to the hole layer.

    摘要翻译： 一个结构。 该结构包括：孔层; 包括顶孔层表面的孔层，其中所述孔层具有垂直于所述孔层表面的第一方向的厚度; 底部抗反射涂层（BARC）层，其在顶部孔层表面上与孔层直接物理接触; 与BARC层直接物理接触的光致抗蚀剂层，其中第一方向上的连续孔完全穿过光致抗蚀剂层，BARC层和空穴层; 以及在光致抗蚀剂层的侧面与顶层孔表面的光致抗蚀剂层直接物理接触的聚合孔收缩区域，其中，所述孔收缩区域在所述孔层表面的方向 从BARC层到孔层。

    Utilizing inverse reactive ion etching lag in double patterning contact formation
    8.
    发明授权
    Utilizing inverse reactive ion etching lag in double patterning contact formation 失效
    在双重图案化接触形成中利用反向离子蚀刻滞后

    公开(公告)号：US07786017B1

    公开(公告)日：2010-08-31

    申请号：US12561612

    申请日：2009-09-17

    申请人： Bradley J. Morgenfeld ,  Scott D. Allen ,  Colin J. Brodsky ,  Wai-Kin Li

    发明人： Bradley J. Morgenfeld ,  Scott D. Allen ,  Colin J. Brodsky ,  Wai-Kin Li

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/31116 ,  H01L21/76816

    摘要： Solutions for solutions for utilizing Inverse Reactive Ion Etching lag in double patterning contact formation are disclosed. In one embodiment, a method includes providing a CMOS device including: an NMOS device having an NMOS gate and a PMOS device having a PMOS gate; a shallow trench isolation located between the NMOS device and the PMOS device; and an inter-level dielectric located over the NMOS device, the PMOS device and the shallow trench isolation; performing a double-patterning etch process on the CMOS device under conditions causing inverse reactive ion etching lag, the performing including forming a first opening, a second opening and a third opening, the second opening being wider than the first opening, and the third opening being contiguous with the second opening; and forming a first contact in the first opening and forming a second contact in both of the second opening and the third opening.

    摘要翻译： 公开了用于在双重图案化接触形成中利用反向离子蚀刻滞后的解决方案。 在一个实施例中，一种方法包括提供CMOS器件，其包括：具有NMOS栅极和PMOS器件的NMOS器件，具有PMOS栅极; 位于NMOS器件和PMOS器件之间的浅沟槽隔离; 以及位于NMOS器件，PMOS器件和浅沟槽隔离之上的级间电介质; 在引起反向离子蚀刻滞后的条件下在CMOS器件上进行双图案化蚀刻工艺，其特征在于包括形成第一开口，第二开口和第三开口，第二开口比第一开口宽，第三开口 与第二个开口连续; 以及在所述第一开口中形成第一触点并且在所述第二开口和所述第三开口中形成第二触点。

    COMPOSITE STRUCTURES TO PREVENT PATTERN COLLAPSE
    9.
    发明申请
    COMPOSITE STRUCTURES TO PREVENT PATTERN COLLAPSE 失效
    复合结构防止图案褶皱

    公开(公告)号：US20080286683A1

    公开(公告)日：2008-11-20

    申请号：US11750026

    申请日：2007-05-17

    申请人： Colin J. Brodsky ,  Allen H. Gabor ,  Javier Perez

    发明人： Colin J. Brodsky ,  Allen H. Gabor ,  Javier Perez

    IPC分类号： G03C1/00 ,  G03C5/00

    CPC分类号： G03F7/0035

    摘要： A method and a structure. The structure includes: a solid core comprising a first photoresist material, the core having a bottom surface on a substrate, a top surface and opposite first and second side surfaces between the top surface and the bottom surface; and a shell comprising a second photoresist material, the shell on the top surface of the substrate, the shell containing a cavity open to the top surface of the substrate, the shell formed over the top surface and the first and second side surfaces walls of the core, the core completely filling the cavity. The core is stiffer than the shell. The method includes: forming the core from a first photoresist layer and forming the shell from a second photoresist layer applied over the core. The core may be cross-linked to increase its stiffness.

    摘要翻译： 一种方法和结构。 该结构包括：固体芯，其包括第一光致抗蚀剂材料，所述芯在基底上具有底表面，顶表面以及在顶表面和底表面之间的相对的第一和第二侧表面; 以及壳体，其包括第二光致抗蚀剂材料，所述壳体在所述基板的顶表面上，所述外壳包含通向所述基板的顶表面的空腔，所述外壳形成在所述顶表面上以及所述第一和第二侧表面壁上 核心，核心完全填充空腔。 核心比壳更僵硬。 该方法包括：从第一光致抗蚀剂层形成芯并从施加在芯上的第二光致抗蚀剂层形成壳。 芯可以交联以增加其刚度。

    Topography compensated film application methods
    10.
    发明授权
    Topography compensated film application methods 有权
    地形补偿膜应用方法

    公开(公告)号：US07354779B2

    公开(公告)日：2008-04-08

    申请号：US11276707

    申请日：2006-03-10

    申请人： Colin J. Brodsky ,  Scott J. Bukofsky ,  Allen H. Gabor

    发明人： Colin J. Brodsky ,  Scott J. Bukofsky ,  Allen H. Gabor

    IPC分类号： G01R31/26 ,  H01L21/66

    CPC分类号： H01L21/0271 ,  H01L21/0276

    摘要： Methods for applying topographically compensated film in a semiconductor wafer fabrication process are disclosed. The processes include premapping a surface of a wafer so as to determine the local topography (e.g., z-height) of the wafer and then applying a variable depth of a film to the wafer, such that the variable depth is modulated based on the local topography of the wafer. The resultant topography of the applied film and wafer is substantially planar (e.g., within approximately 100 nm) across the wafer.

    摘要翻译： 公开了在半导体晶片制造工艺中应用地形学补偿膜的方法。 这些过程包括预先处理晶片的表面，以便确定晶片的局部形貌（例如，z-高度），然后将薄膜的可变深度施加到晶片，使得可变深度基于本地 晶圆的形貌。 所施加的膜和晶片的所得形貌在晶片上基本上是平面的（例如在大约100nm内）。