Utilizing inverse reactive ion etching lag in double patterning contact formation
    1.
    发明授权
    Utilizing inverse reactive ion etching lag in double patterning contact formation 失效
    在双重图案化接触形成中利用反向离子蚀刻滞后

    公开(公告)号:US07786017B1

    公开(公告)日:2010-08-31

    申请号:US12561612

    申请日:2009-09-17

    IPC分类号: H01L21/302

    摘要: Solutions for solutions for utilizing Inverse Reactive Ion Etching lag in double patterning contact formation are disclosed. In one embodiment, a method includes providing a CMOS device including: an NMOS device having an NMOS gate and a PMOS device having a PMOS gate; a shallow trench isolation located between the NMOS device and the PMOS device; and an inter-level dielectric located over the NMOS device, the PMOS device and the shallow trench isolation; performing a double-patterning etch process on the CMOS device under conditions causing inverse reactive ion etching lag, the performing including forming a first opening, a second opening and a third opening, the second opening being wider than the first opening, and the third opening being contiguous with the second opening; and forming a first contact in the first opening and forming a second contact in both of the second opening and the third opening.

    摘要翻译: 公开了用于在双重图案化接触形成中利用反向离子蚀刻滞后的解决方案。 在一个实施例中,一种方法包括提供CMOS器件,其包括:具有NMOS栅极和PMOS器件的NMOS器件,具有PMOS栅极; 位于NMOS器件和PMOS器件之间的浅沟槽隔离; 以及位于NMOS器件,PMOS器件和浅沟槽隔离之上的级间电介质; 在引起反向离子蚀刻滞后的条件下在CMOS器件上进行双图案化蚀刻工艺,其特征在于包括形成第一开口,第二开口和第三开口,第二开口比第一开口宽,第三开口 与第二个开口连续; 以及在所述第一开口中形成第一触点并且在所述第二开口和所述第三开口中形成第二触点。

    Method for post lithographic critical dimension shrinking using thermal reflow process
    2.
    发明授权
    Method for post lithographic critical dimension shrinking using thermal reflow process 失效
    使用热回流工艺的后平版印刷临界尺寸收缩的方法

    公开(公告)号:US07494919B2

    公开(公告)日:2009-02-24

    申请号:US10905579

    申请日:2005-01-12

    IPC分类号: H01L21/4763

    摘要: A method for reducing the size of a patterned semiconductor feature includes forming a first layer over a substrate to be patterned, and forming a photoresist layer over the first layer. The photoresist layer is patterned so as to expose portions of the first layer, and the exposed portions of the first layer are removed in a manner so as to create an undercut region beneath the patterned photoresist layer. The patterned photoresist layer is reflowed so as to cause reflowed portions of the patterned photoresist layer to occupy at least a portion of the undercut region.

    摘要翻译: 用于减小图案化半导体特征的尺寸的方法包括在待图案化的衬底上形成第一层,以及在第一层上形成光致抗蚀剂层。 图案化光致抗蚀剂层以暴露第一层的部分,并且以使得在图案化的光致抗蚀剂层下面形成底切区域的方式去除第一层的暴露部分。 图案化的光致抗蚀剂层被回流以使图案化的光致抗蚀剂层的回流部分占据底切区域的至少一部分。

    Polymer compositions and methods
    4.
    发明授权
    Polymer compositions and methods 有权
    聚合物组合物和方法

    公开(公告)号:US08952104B2

    公开(公告)日:2015-02-10

    申请号:US13977059

    申请日:2012-01-06

    申请人: Scott D. Allen

    发明人: Scott D. Allen

    CPC分类号: C08G64/42 C08G64/0216

    摘要: The present disclosure describes polymer compositions comprising aliphatic polycarbonate chains containing epoxy functional groups. In certain embodiments, the aliphatic polycarbonate chains comprise epoxy functional groups capable of participating in epoxide ring-opening reactions. In certain embodiments, the invention encompasses composites formed by the reaction of nucleophilic reagents and epoxide functional groups, wherein the epoxide functional groups are located on aliphatic polycarbonate chains.

    摘要翻译: 本公开描述了包含含有环氧官能团的脂族聚碳酸酯链的聚合物组合物 在某些实施方案中,脂族聚碳酸酯链包含能够参与环氧化物开环反应的环氧官能团。 在某些实施方案中,本发明包括通过亲核试剂和环氧官能团的反应形成的复合物,其中环氧官能团位于脂族聚碳酸酯链上。

    SUCCINIC ANHYDRIDE FROM ETHYLENE OXIDE
    8.
    发明申请
    SUCCINIC ANHYDRIDE FROM ETHYLENE OXIDE 有权
    来自乙烯氧化物的SUCCINIC ANHYDRIDE

    公开(公告)号:US20130165670A1

    公开(公告)日:2013-06-27

    申请号:US13819969

    申请日:2011-08-25

    IPC分类号: C07D307/60

    摘要: Continuous flow systems and methods produce succinic anhydride by a double carbonylation of ethylene oxide with carbon monoxide and at least one catalyst. In some embodiments, the double carbonylation occurs using a single catalyst. In other embodiments, a first catalyst is used to promote the first carbonylation, and a second catalyst different from the first catalyst is used to promote the second carbonylation. The succinic anhydride is isolated from the product stream by crystallization and the catalyst is recycled to the reaction stream.

    摘要翻译: 连续流动系统和方法通过环氧乙烷与一氧化碳和至少一种催化剂的双羰基化产生琥珀酸酐。 在一些实施方案中,使用单一催化剂进行双羰基化。 在其它实施方案中,使用第一催化剂促进第一羰基化,并且使用不同于第一催化剂的第二催化剂来促进第二羰基化。 琥珀酸酐通过结晶从产物流中分离,催化剂再循环到反应流中。

    Polycarbonate polyol compositions and methods
    9.
    发明授权
    Polycarbonate polyol compositions and methods 有权
    聚碳酸酯多元醇组合物和方法

    公开(公告)号:US08470956B2

    公开(公告)日:2013-06-25

    申请号:US13584992

    申请日:2012-08-14

    IPC分类号: C08G64/00 C08G63/02

    摘要: In one aspect, the present disclosure encompasses polymerization systems for the copolymerization of CO2 and epoxides comprising 1) a catalyst including a metal coordination compound having a permanent ligand set and at least one ligand that is a polymerization initiator, and 2) a chain transfer agent having two or more sites that can initiate polymerization. In a second aspect, the present disclosure encompasses methods for the synthesis of polycarbonate polyols using the inventive polymerization systems. In a third aspect, the present disclosure encompasses polycarbonate polyol compositions characterized in that the polymer chains have a high percentage of —OH end groups and a high percentage of carbonate linkages. The compositions are further characterized in that they contain polymer chains having an embedded polyfunctional moiety linked to a plurality of individual polycarbonate chains.

    摘要翻译: 一方面,本公开内容涵盖用于CO 2和环氧化物共聚的聚合体系,其包括1)包含具有永久性配体组的金属配位化合物和至少一种作为聚合引发剂的配体的催化剂,和2)链转移剂 具有两个或更多个可引发聚合的位点。 在第二方面,本发明包括使用本发明聚合体系合成聚碳酸酯多元醇的方法。 在第三方面,本公开内容包括聚碳酸酯多元醇组合物,其特征在于聚合物链具有高百分比的-OH端基和高百分比的碳酸酯键。 组合物的特征还在于它们含有聚合物链,其具有与多个单独的聚碳酸酯链连接的嵌入的多官能部分。