公开(公告)号：US20100009526A1

公开(公告)日：2010-01-14

申请号：US12540492

申请日：2009-08-13

申请人： Hitoshi KASAI ,  Takuji OKAHISA ,  Shunsuke FUJITA ,  Naoki MATSUMOTO ,  Hideyuki IJIRI ,  Fumitaka SATO ,  Kensaku MOTOKI ,  Seiji NAKAHATA ,  Koji UEMATSU ,  Ryu HIROTA

发明人： Hitoshi KASAI ,  Takuji OKAHISA ,  Shunsuke FUJITA ,  Naoki MATSUMOTO ,  Hideyuki IJIRI ,  Fumitaka SATO ,  Kensaku MOTOKI ,  Seiji NAKAHATA ,  Koji UEMATSU ,  Ryu HIROTA

IPC分类号： H01L21/203

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。 因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

公开(公告)号：US20090071394A1

公开(公告)日：2009-03-19

申请号：US12273250

申请日：2008-11-18

申请人： Seiji NAKAHATA ,  Ryu HIROTA ,  Kensaku MOTOKI ,  Takuji OKAHISA ,  Koji UEMATSU

发明人： Seiji NAKAHATA ,  Ryu HIROTA ,  Kensaku MOTOKI ,  Takuji OKAHISA ,  Koji UEMATSU

IPC分类号： C30B1/00

CPC分类号： C30B29/406 ,  C30B23/002 ,  C30B25/02 ,  C30B29/403

摘要： A low dislocation density AlxInyGa1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an AlxInyGa1-x-yN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

摘要翻译： 低位错密度Al x In y Ga 1-x-y N单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长Al x In y Ga 1-x-y N晶体，形成平行面的重复 保留小平面山谷和小平面谷，产生伴随谷的大量缺陷积聚区（H），产生小面后的低位错单晶区（Z），使C平面生长区（ Y）在平面之后，通过生长小面的作用将小平面上的小平面上的位错收集到谷中，减少低位错单晶区域（Z）和C平面生长区域（Y）中的位错，并累积 大量缺陷积聚区域（H）的芯（S）或界面（K）中的位错。

公开(公告)号：US20090155989A1

公开(公告)日：2009-06-18

申请号：US12388983

申请日：2009-02-19

申请人： Koji UEMATSU ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

发明人： Koji UEMATSU ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

IPC分类号： H01L21/20

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts not burying the facets, maintaining the convex facet hills on Π and the network concavities on excluding dislocations in the facet hills down to the outlining concavities on forming a defect accumulating region H on decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.

摘要翻译： 氮化物半导体晶体基板通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，在露出部分Pi上产生由小面覆盖的凸面小丘，从而形成掩模覆盖的凹面 部分不包括小平面上的位错，直到减少小平面山丘的位错，改善小丘到低缺陷 密度单晶区域Z，产生坚固的氮化物晶体，并将氮化物晶体切割和研磨成镜面氮化物晶片。 在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。

公开(公告)号：US20120164058A1

公开(公告)日：2012-06-28

申请号：US13402131

申请日：2012-02-22

申请人： Tomoki UEMURA ,  Takashi SAKURADA ,  Shinsuke FUJIWARA ,  Takuji OKAHISA ,  Koji UEMATSU ,  Hideaki NAKAHATA

发明人： Tomoki UEMURA ,  Takashi SAKURADA ,  Shinsuke FUJIWARA ,  Takuji OKAHISA ,  Koji UEMATSU ,  Hideaki NAKAHATA

IPC分类号： C01B21/06 ,  C30B19/12 ,  C30B23/02

CPC分类号： H01L21/02623 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

摘要翻译： 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法， 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。