利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

135 条记录 (耗时 0.031 秒)

    Process for producing aromatic primary hydroperoxide
    3.
    发明授权
    Process for producing aromatic primary hydroperoxide 失效
    制备芳香族主要过氧化氢的方法

    公开(公告)号：US4255592A

    公开(公告)日：1981-03-10

    申请号：US79330

    申请日：1979-09-27

    申请人： Yoshio Kawai ,  Koichi Kida ,  Hideo Ikarashi ,  Tsukasa Toki ,  Yoshiharu Suzuki

    发明人： Yoshio Kawai ,  Koichi Kida ,  Hideo Ikarashi ,  Tsukasa Toki ,  Yoshiharu Suzuki

    IPC分类号： C07C67/00 ,  C07C407/00 ,  C07C409/08 ,  C07C179/035

    CPC分类号： C07C409/08 ,  C07C407/00

    摘要： An aromatic primary hydroperoxide is produced by oxidizing a methyl-substituted aromatic compound in a liquid phase with a molecular oxygen-containing gas at a temperature of 80.degree.-150.degree. C. under a pressure of the atmospheric to 100 kg/cm.sup.2 gage in the presence of 8-300 parts by weight of an aliphatic tertiary hydroperoxide per 100 parts by weight of the methyl-substituted aromatic compound. The oxidation reaction is promoted, an aromatic primary hydroperoxide content of the reaction products is increased, whereas by-products are reduced, and a selectivity to the aromatic primary hydroperoxide is considerably increased.

    摘要翻译： 通过在大气压至100kg / cm2的压力下，在80〜150℃的温度下，用分子氧气体在液相中氧化甲基取代的芳香族化合物来制备芳族伯氢过氧化物 每100重量份甲基取代的芳族化合物存在8-300重量份脂族叔氢过氧化物。 促进氧化反应，反应产物的芳族伯氢过氧化物含量增加，而副产物减少，并且对芳族伯氢过氧化物的选择性显着增加。

    Patterning process
    4.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08617800B2

    公开(公告)日：2013-12-31

    申请号：US12458884

    申请日：2009-07-27

    申请人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Yoshio Kawai

    发明人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Yoshio Kawai

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0332 ,  H01L21/0275 ,  H01L21/0337

    摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.

    摘要翻译： 公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度 并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。 可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。

    Pattern forming process and resist-modifying composition
    5.
    发明授权
    Pattern forming process and resist-modifying composition 有权
    图案形成工艺和抗蚀剂改性组合物

    公开(公告)号：US08367310B2

    公开(公告)日：2013-02-05

    申请号：US12708196

    申请日：2010-02-18

    申请人： Takeru Watanabe ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Yoshio Kawai

    发明人： Takeru Watanabe ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Yoshio Kawai

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0397 ,  G03F7/0035 ,  G03F7/40

    摘要： A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.

    摘要翻译： 图案化工艺包括（1）涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物施加到 第一抗蚀剂图案和加热以修饰第一抗蚀剂图案，（3）涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 改性的第一抗蚀剂膜与纯水的接触角为50°-85°。