公开(公告)号：US11387116B2

公开(公告)日：2022-07-12

申请号：US16806211

申请日：2020-03-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

IPC分类号： H01L21/324 ,  H01L21/336 ,  H01L29/786 ,  H01L21/40 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  H01L21/383 ,  H01L21/477

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

公开(公告)号：US09362136B2

公开(公告)日：2016-06-07

申请号：US14477115

申请日：2014-09-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/324 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

摘要翻译： 在包括氧化物半导体膜的晶体管的制造过程中，对氧化物半导体膜进行氧掺杂处理，然后对氧化物半导体膜和设置在氧化物半导体膜上的氧化铝膜进行热处理。 因此，形成包含比化学计量组成物多的氧的区域的氧化物半导体膜。 使用氧化物半导体膜形成的晶体管可以具有高的可靠性，因为通过偏压 - 温度应力测试（BT测试）的晶体管的阈值电压的变化量减小。

公开(公告)号：US20130277895A1

公开(公告)日：2013-10-24

申请号：US13922323

申请日：2013-06-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC分类号： B29C31/00

CPC分类号： H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

摘要： One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

公开(公告)号：US10083823B2

公开(公告)日：2018-09-25

申请号：US14578603

申请日：2014-12-22

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC分类号： H01J37/34 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B41/00 ,  C04B41/80 ,  C23C14/10 ,  C23C14/34 ,  C23C14/56 ,  H01L21/02 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786 ,  B29C31/00 ,  H01L29/66 ,  C04B111/00

CPC分类号： H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

摘要： One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

公开(公告)号：US20150136594A1

公开(公告)日：2015-05-21

申请号：US14578603

申请日：2014-12-22

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC分类号： H01J37/34 ,  H01L29/786 ,  H01L21/02

CPC分类号： H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

摘要： One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

摘要翻译： 一个目的是提供一种用于形成氧化物半导体膜的沉积技术。 通过使用包含含氢浓度低的金属氧化物的烧结体（例如低于1×1016原子/ cm3）的溅射靶形成氧化物半导体膜，氧化物半导体膜含有少量的杂质如 含有以H 2 O或氢原子为代表的氢的化合物。 此外，该氧化物半导体膜用作晶体管的有源层。

公开(公告)号：US10002775B2

公开(公告)日：2018-06-19

申请号：US15169925

申请日：2016-06-01

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

IPC分类号： H01L21/40 ,  H01L21/383 ,  H01L21/477 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L21/324

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

公开(公告)号：US09660159B2

公开(公告)日：2017-05-23

申请号：US13743914

申请日：2013-01-17

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L23/48 ,  H01L33/62 ,  C23C14/16 ,  C23C14/34 ,  H01L21/285 ,  H01L23/552 ,  H01L29/49 ,  H01L27/12

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

公开(公告)号：US08937020B2

公开(公告)日：2015-01-20

申请号：US13922323

申请日：2013-06-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Keiji Sato

IPC分类号： H01L21/302 ,  H01L21/461 ,  C04B41/00 ,  H01L29/786 ,  C04B35/453 ,  C23C14/34 ,  H01L21/02 ,  H01L29/423 ,  C04B35/01 ,  C23C14/56 ,  C04B35/645 ,  C23C14/10 ,  B29C31/00 ,  H01L29/417 ,  H01L29/66 ,  C04B41/80 ,  H01L29/45 ,  C04B111/00

CPC分类号： H01J37/3429 ,  B29C31/008 ,  C04B35/01 ,  C04B35/453 ,  C04B35/645 ,  C04B35/6455 ,  C04B41/0072 ,  C04B41/009 ,  C04B41/80 ,  C04B2111/00844 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/658 ,  C04B2235/662 ,  C04B2235/666 ,  C04B2235/77 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/564 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  C04B35/04 ,  C04B35/10 ,  C04B35/457 ,  C04B41/4517 ,  C04B41/53

摘要： One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

摘要翻译： 一个目的是提供一种用于形成氧化物半导体膜的沉积技术。 通过使用包含含氢浓度低的金属氧化物的烧结体（例如低于1×1016原子/ cm3）的溅射靶形成氧化物半导体膜，氧化物半导体膜含有少量的杂质如 含有以H 2 O或氢原子为代表的氢的化合物。 此外，该氧化物半导体膜用作晶体管的有源层。

公开(公告)号：US20130126883A1

公开(公告)日：2013-05-23

申请号：US13743914

申请日：2013-01-17

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toru Takayama ,  Keiji Sato ,  Shunpei Yamazaki

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  C23C14/165 ,  C23C14/3414 ,  H01L21/2855 ,  H01L23/552 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having good TFT characteristics is realized. By using a high purity target as a target, using a single gas, argon (Ar), as a sputtering gas, setting the substrate temperature equal to or less than 300° C., and setting the sputtering gas pressure from 1.0 Pa to 3.0 Pa, the film stress of a film is made from −1×1010 dyn/cm2 to 1×1010 dyn/cm2. By thus using a conducting film in which the amount of sodium contained within the film is equal to or less than 0.3 ppm, preferably equal to or less than 0.1 ppm, and having a low electrical resistivity (equal to or less than 40 μΩ·cm), as a gate wiring material and a material for other wirings of a TFT, the operating performance and the reliability of a semiconductor device provided with the TFT can be increased.

摘要翻译： 实现了具有良好的TFT特性的半导体器件。 通过使用高纯度靶作为靶，使用单一气体氩（Ar）作为溅射气体，将基板温度设定为300℃以下，将溅射气体压力设定为1.0Pa〜3.0 Pa时，膜的膜应力为-1×1010dyn / cm 2〜1×1010dyn / cm 2。 通过这样使用导电膜，其中膜中所含的钠的量等于或小于0.3ppm，优选等于或小于0.1ppm，并且具有低电阻率（等于或小于40μΩ·cm ），作为栅极布线材料和TFT的其他配线的材料，可以提高设置有TFT的半导体器件的操作性能和可靠性。