Methods and apparatus for manufacturing tubes
    6.
    发明授权
    Methods and apparatus for manufacturing tubes 失效
    用于制造管子的方法和装置

    公开(公告)号:US4800250A

    公开(公告)日:1989-01-24

    申请号:US64548

    申请日:1987-06-22

    摘要: A method and apparatus for guiding the opposed edges of sheet material into substantially abutting edge-to-edge relationship with one another and thereafter welding said edges by a high energy welding source to form a seam. The invention enables the continuous high speed butt welding of the sheet material to form cylindrical bodies. The apparatus includes three elements, a mandrel, a mandrel holder and tube holders. Sheet material is fed to around said mandrel and advanced by a tube holder with an edge of two opposite edges of said sheet material being in intimate contact with a basis plane of said mandrel holder. Another edges is slided into contact with above mentioned edge of sheet material making abutting relationship after passing through the basis plane of said mandrel holder. These abutting edges pass a high energy zone of a welder and butt welded to make a tube.

    摘要翻译: 一种用于将片材的相对边缘引导成彼此基本上邻接的边缘到边缘关系的方法和装置,然后通过高能量焊接源焊接所述边缘以形成接缝。 本发明能够使片材的连续高速对接焊接形成圆柱体。 该装置包括三个元件,心轴,心轴保持器和管座。 片材被馈送到所述心轴周围并由管保持器推进,其中所述片材的两个相对边缘的边缘与所述心轴保持器的基础平面紧密接触。 另外的边缘与上述片材的边缘滑动接触,在穿过所述心轴保持器的基面之后形成邻接关系。 这些邻接边缘通过焊机的高能区域并对接焊接以制造管。

    Butt welding method by means of laser beam
    7.
    发明授权
    Butt welding method by means of laser beam 失效
    通过激光束对接焊接方法

    公开(公告)号:US4883937A

    公开(公告)日:1989-11-28

    申请号:US248061

    申请日:1988-09-23

    IPC分类号: B23K26/26 B23K33/00

    CPC分类号: B23K26/26 B23K33/008

    摘要: Two thin plate members preferably made of metallic sheets are prepared and one end surface of at least one of the members is formed so as to have an inwardly curved recess which constitutes a gap when the end surfaces of the members are linearly butted together. A laser beam is irradiated along the butted portion of the members. The gap may have various forms having a predetermined width. The two members to be butt-welded may be substituted by two end portions of a single metallic sheet having a rectangular configuration in the case where a shell portion of a can is formed by the butt-welding operation.

    摘要翻译: 制备优选由金属片制成的两个薄板构件,并且至少一个构件的一个端面形成为当构件的端面线性对接在一起时构成间隙的向内弯曲的凹部。 沿着构件的对接部分照射激光束。 间隙可以具有预定宽度的各种形式。 在通过对接焊接操作形成罐的外壳部分的情况下,要对接焊接的两个构件可以被具有矩形构造的单个金属片的两个端部取代。

    Microwave plasma processing device and plasma processing gas supply member
    9.
    发明授权
    Microwave plasma processing device and plasma processing gas supply member 有权
    微波等离子体处理装置和等离子体处理气体供应部件

    公开(公告)号:US07582845B2

    公开(公告)日:2009-09-01

    申请号:US10546283

    申请日:2004-03-11

    IPC分类号: B23K10/00

    摘要: A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

    摘要翻译: 微波等离子体处理装置能够在待处理的基板上形成均匀的薄膜。 微波等离子体处理装置包括用于将待处理基板固定在等离子体处理室中的中心轴上的定影装置,用于对基板内部和外部进行减压的排气装置,存在于基板中的金属加工气体供给部件和 与等离子体处理室一起形成可折入的圆柱形谐振系统,以及用于将微波引入等离子体处理室以进行处理的微波引入装置。 在定影装置的基板保持部的特定位置设置有微波密封构件,并且微波导入装置的连接位置被设定在从内部形成的场强分布的规定的弱场位置 等离子体处理室。

    Microwave plasma processing method
    10.
    发明申请

    公开(公告)号:US20070000879A1

    公开(公告)日:2007-01-04

    申请号:US10550509

    申请日:2004-04-12

    IPC分类号: B23K9/02

    摘要: A microwave plasma processing method is provided which enables a uniform thin film layer to be formed on a surface to be processed and which enables a short time processing. In the microwave plasma processing method, microwaves are introduced into a plasma processing chamber 1, and a processing gas is transformed into plasma to form a thin film layer on a base substance 13 disposed in the plasma processing chamber 13, and the method comprises: fixing the base substance 13 coaxially with a central axis of the plasma processing chamber 1; setting a standing wave mode of the microwaves in the plasma processing chamber to a TE mode or a TEM mode from a mouth portion 131 to a body portion 133 of the base substance; and setting a mode having both the TE mode and a TM mode in a bottom portion 132 of the base substance.