Laser module with focusing lens and fixing method of the focusing lens
    2.
    发明授权
    Laser module with focusing lens and fixing method of the focusing lens 失效
    具有聚焦透镜的激光模块和聚焦透镜的固定方法

    公开(公告)号:US5673350A

    公开(公告)日:1997-09-30

    申请号:US573553

    申请日:1995-12-15

    摘要: The present invention relates to an accurate method using laser welding for mounting an optical focusing lens utilized in a semi-conductor laser module for optical transmission and optical amplification through an optical fiber and a laser module so produced. The laser module includes an aligned laser diode, a lens fixture mounting the laser diode, a focusing lens mounted within a lens housing which in turn is mounted by a lens ring to the lens fixture. In the method, the steps include aligning mutual positions between the laser diode and the optical focusing lens in the vertical and horizontal directions so that the magnitude of the optical signal output from the optical fiber is maximized after the distance between the optical focusing lens and the optical fiber is adjusted and fixed to obtain a maximum optical coupling efficiency between the laser diode and the optical fiber. Next a laser-welding step is performed at an interval between the lens housing and the lens ring. The mutual positions between the laser diode and the optical focusing lens are aligned in the vertical and horizontal directions so that the magnitude of the optical signal output from the optical fiber is maximized. Finally a laser-welding step is performed at an interval between the lens fixture and the lens ring.

    摘要翻译: 本发明涉及一种使用激光焊接的光学聚焦透镜,用于通过光纤和如此制造的激光模块在用于光传输和光放大的半导体激光器模块中安装光聚焦透镜的精确方法。 激光模块包括对准的激光二极管,安装激光二极管的透镜夹具,安装在透镜壳体内的聚焦透镜,透镜壳体又由透镜环安装到透镜夹具。 在该方法中,步骤包括在垂直和水平方向上对准激光二极管和光学聚焦透镜之间的相互位置,使得从光纤输出的光信号的大小在光聚焦透镜和 光纤被调整和固定,以获得激光二极管与光纤之间的最大光耦合效率。 接下来,在透镜壳体和透镜环之间的间隔进行激光焊接步骤。 激光二极管和光聚焦透镜之间的相互位置在垂直和水平方向上对准,使得从光纤输出的光信号的幅度最大化。 最后,以透镜夹具和透镜环之间的间隔进行激光焊接步骤。

    Optical module having lenses aligned on lens-positioning V-groove and
fabrication method thereof
    3.
    发明授权
    Optical module having lenses aligned on lens-positioning V-groove and fabrication method thereof 失效
    具有在透镜定位V形槽上对准的透镜的光学模块及其制造方法

    公开(公告)号:US5854867A

    公开(公告)日:1998-12-29

    申请号:US846154

    申请日:1997-04-25

    摘要: An improved optical module having lenses aligned on a lens-positioning V-groove and a fabrication method thereof which includes a silicon substrate, which defines a light transfer path below a surface thereof, including light transferring V-grooves and a light receiving V-groove, and lens-positioning V-groove for determining the position of a lens, wherein two lens-positioning V-grooves are formed therein, an optical transmitter module including a laser which is a light source and is flip-chip-bonded to the substrate by a solder bump after an optical waveguide is previously aligned with the V-groove by using an alignment mark behind the vertical portion of the light transferring v-groove. A light transferring lens attached on one lens-positioning V-groove for condensing the light from the laser, and a laser monitoring optical detector arranged on a side wall opposite the laser of the light transferring V-groove, wherein an active region is flip-chip-bonded toward the substrate, for monitoring the laser, and an optical receiver module including a light receiving lens attached on the lens-positioning V-groove of the silicon substrate for condensing beam externally transferred thereto, and a light receiving optical detector attached to the light receiving lens for detecting beam externally transferred thereto, wherein the optical transmitter module and the optical receiver module are arranged in the same silicon substrate.

    摘要翻译: 一种具有在透镜定位V形槽上对准的透镜的改进的光学模块及其制造方法,其包括限定其表面下方的光传输路径的硅衬底,包括光传输V形槽和接收光的V形槽 和用于确定透镜位置的透镜定位V形槽,其中在其中形成两个透镜定位V形槽,光发射器模块包括作为光源的激光器并且被倒装芯片结合到衬底 通过使用光传输V形槽的垂直部分之后的对准标记,在光波导预先与V形槽对准之后通过焊料凸块。 安装在一个透镜定位V形槽上的光传输透镜,用于聚集来自激光器的光;以及激光监视光学检测器,布置在与传输V形槽的激光器相对的侧壁上,其中有源区域翻转, 以及包含安装在硅衬底的透镜定位V形槽上的光接收透镜的光接收器模块的光接收器模块,用于将外部传送到其上的光束聚光;以及光接收光检测器, 用于检测从外部传送到其上的光束的光接收透镜,其中所述光发射器模块和所述光接收器模块布置在同一硅衬底中。

    Method for fabricating a hybrid optical integrated circuit employing SOI optical waveguide
    5.
    发明授权
    Method for fabricating a hybrid optical integrated circuit employing SOI optical waveguide 有权
    使用SOI光波导制造混合光集成电路的方法

    公开(公告)号:US06316281B1

    公开(公告)日:2001-11-13

    申请号:US09393279

    申请日:1999-09-10

    IPC分类号: H01L2100

    摘要: The present invention relates to an optical integrated circuit; and, more particularly, to a method for preparing an improved hybrid optical integrated circuit which is capable of accommodating optical waveguides, optical devices, such as light emitting devices and light receiving devices, and optical fibers in an effective manner. The present invention has the advantages of minimizing horizontal misalignment error between the SOI waveguide rib area, the V-groove etch window and the alignment marks, decreasing the manufacturing cost by passively aligning the waveguides, the optical devices and the optical fibers on a single substrate. Also, the present invention has an effect of reducing fresnel reflection loss by providing the LPCVD silicon nitride layer capable of being used as an anti-reflection coating layer at both ends of the waveguide.

    摘要翻译: 本发明涉及一种光集成电路; 更具体地,涉及一种能够以有效的方式容纳光波导,光学器件,例如发光器件和光接收器件以及光纤的改进的混合光学集成电路的制备方法。 本发明的优点在于使SOI波导肋区域,V槽蚀刻窗口和对准标记之间的水平偏移误差最小化,通过在单个衬底上被动地对准波导,光学器件和光纤来降低制造成本 。 此外,本发明通过提供能够用作波导两端的防反射涂层的LPCVD氮化硅层,具有减少菲涅尔反射损失的效果。

    Methods for producing, transferring, and renewing virtual machine applications using flash, and system thereof
    6.
    发明申请
    Methods for producing, transferring, and renewing virtual machine applications using flash, and system thereof 审中-公开
    使用闪存进行虚拟机应用的生成,传送和更新的方法及其系统

    公开(公告)号:US20070168952A1

    公开(公告)日:2007-07-19

    申请号:US11291341

    申请日:2005-11-30

    IPC分类号: G06F9/44 G06F9/45

    CPC分类号: G06F9/45533 G06F8/60

    摘要: The present invention relates to a VM (Virtual Machine) application program that can be used in a wireless terminal having a VM. A generated flash file is converted to a flash file for a wireless terminal, and a VM application program is produced by incorporating the wireless terminal flash file into a VM frame including a flash engine for running the wireless terminal flash file and a flash-VM interface for exchanging data with a VM provided in the wireless terminal. By a method for producing the VM application program, a VM application program can be easily developed by generating the flash file and converting the same, a VM application program including the flash file can be executed in a wireless terminal having a VM therein, and a VM application program can be renewed by only downloading a flash file.

    摘要翻译: 本发明涉及可以在具有VM的无线终端中使用的VM(虚拟机)应用程序。 生成的闪存文件被转换为无线终端的闪存文件,并且通过将无线终端闪存文件合并到包括用于运行无线终端闪存文件的闪存引擎的VM帧和闪存 - VM接口中来生成VM应用程序 用于与在无线终端中提供的VM交换数据。 通过生产VM应用程序的方法,可以通过生成闪存文件并进行转换来容易地开发VM应用程序,包括闪存文件的VM应用程序可以在其中具有VM的无线终端中执行,并且 可以通过下载Flash文件来更新VM应用程序。

    Device structure of RF LDMOS with trench type sinker
    7.
    发明授权
    Device structure of RF LDMOS with trench type sinker 失效
    具有沟槽型沉降片的RF LDMOS的器件结构

    公开(公告)号:US06870222B2

    公开(公告)日:2005-03-22

    申请号:US09752396

    申请日:2000-12-28

    摘要: A device structure of a LDMOSFET has trench type sinker formed using a trench process. A semiconductor layer of a first conductive type is formed within the device structure. A field area is formed in a trench structure on one side of the semiconductor layer and a gate electrode is formed on a given surface of the semiconductor layer. A channel layer of a second conductive type is formed by laterally diffusion from the field area to a width containing both sides of the gate electrode. The source area of LDMOS is electrically connected with the substrate through the sinker. By a piercing through the source area, the sinker divides the source area into two source areas. This division reduces the parasitic resistance as well as parasitic capacitance. In addition, the device structure eliminates the need for high temperature diffusion process and reduces lateral diffusion of the sinker.

    摘要翻译: LDMOSFET的器件结构具有使用沟槽工艺形成的沟槽型沉积片。 在器件结构内形成第一导电类型的半导体层。 在半导体层的一侧上的沟槽结构中形成场区,并且在半导体层的给定表面上形成栅电极。 通过从场区域到包含栅电极两侧的宽度的横向扩散形成第二导电类型的沟道层。 LDMOS的源区通过沉降片与衬底电连接。 通过穿透源区域,沉降片将源区域划分为两个源区域。 该分频减小了寄生电阻以及寄生电容。 此外,器件结构消除了对高温扩散工艺的需要,并减少了沉降片的横向扩散。

    Method of making a HF LDMOS structure with a trench type sinker
    8.
    发明授权
    Method of making a HF LDMOS structure with a trench type sinker 有权
    制造具有沟槽型沉降片的HF LDMOS结构的方法

    公开(公告)号:US06620667B2

    公开(公告)日:2003-09-16

    申请号:US10160447

    申请日:2002-05-31

    IPC分类号: H01L218234

    摘要: A method of forming an HF power device. The method includes forming a semiconductor layer as a first conductive type on a semiconductor substrate; etching the semiconductor layer forming a first trench; doping an impurity in the neighborhood of the first trench forming a first impurity layer; burying a conduction film into the first trench; etching the semiconductor layer forming a second trench; forming a field oxide film buried into the second trench; forming a gate electrode on a surface of the semiconductor layer; forming a source on the surface of the semiconductor layer; forming a drain area on the surface of the semiconductor layer; forming an LLD area on the surface of the semiconductor layer between the drain area and the gate electrode; forming a first metal electrode; and forming a second metal electrode electrically connected to the LDD area.

    摘要翻译: 一种形成HF功率器件的方法。 该方法包括在半导体衬底上形成作为第一导电类型的半导体层; 蚀刻形成第一沟槽的半导体层; 在形成第一杂质层的第一沟槽附近掺杂杂质; 将导电膜埋入第一沟槽中; 蚀刻形成第二沟槽的半导体层; 形成掩埋在所述第二沟槽中的场氧化膜; 在所述半导体层的表面上形成栅电极; 在半导体层的表面上形成源极; 在所述半导体层的表面上形成漏区; 在漏极区域和栅电极之间的半导体层的表面上形成LLD区域; 形成第一金属电极; 以及形成与LDD区域电连接的第二金属电极。