公开(公告)号：US07015512B2

公开(公告)日：2006-03-21

申请号：US10852437

申请日：2004-05-25

Applicant: Young Ho Park ,  Hun Joo Hahm ,  Seung Jin Yoo

Inventor： Young Ho Park ,  Hun Joo Hahm ,  Seung Jin Yoo

IPC: H01L33/00

CPC classification number: H01L27/156 ,  H01L33/08

Abstract: A high power flip chip LED has an n-doped semiconductor layer formed on the sapphire substrate, with a plurality of first regions and a second region of intersecting lines for separating the first regions from each other. P-doped semiconductor layers are on the first regions of the n-doped semiconductor layer to form mesa structures. At least one pair of diagonal corners of the respective mesa structures are rounded inward to form first basins between adjacent inward-rounded corners. First metal layers are on the mesa structures in a same configuration. A second metal layer is on the second region of the n-doped semiconductor layer. First ohmic contacts are on the first metal layers. Second ohmic contacts are on the second metal layer in the first basins. The LED can prevent the current channeling to increase the luminous area while equalizing the current density area thereby generating high brightness light.

Abstract translation: 高功率倒装芯片LED具有形成在蓝宝石衬底上的n掺杂半导体层，具有多个第一区域和用于将第一区域彼此分离的相交线的第二区域。 P掺杂半导体层在n掺杂半导体层的第一区上，以形成台面结构。 相应台面结构的至少一对对角线向内倒圆，以在相邻的内圆角之间形成第一盆。 第一金属层在相同构型的台面结构上。 第二金属层位于n掺杂半导体层的第二区上。 第一个欧姆接触位于第一个金属层上。 第二个欧姆接触位于第一个盆地的第二个金属层上。 LED可以防止电流通道增加发光面积，同时均衡电流密度区域，从而产生高亮度光。

公开(公告)号：US06914262B2

公开(公告)日：2005-07-05

申请号：US10689630

申请日：2003-10-22

Applicant: Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

Inventor： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

IPC: H01L25/075 ,  H01L27/15 ,  H01L31/12 ,  H01L33/08 ,  H01L33/32 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  Y10S257/918 ,  H01L2924/00014

Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

公开(公告)号：US07087985B2

公开(公告)日：2006-08-08

申请号：US10853236

申请日：2004-05-26

Applicant: Young Ho Park ,  Hyo Kyoung Cho ,  Seung Jin Yoo ,  Kun Yoo Ko

Inventor： Young Ho Park ,  Hyo Kyoung Cho ,  Seung Jin Yoo ,  Kun Yoo Ko

IPC: H01L23/495

CPC classification number: H01L33/382 ,  H01L24/45 ,  H01L2224/45 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/45099 ,  H01L2224/43 ,  H01L2924/01006

Abstract: In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.

Abstract translation: 在具有发光结构的氮化物半导体LED中，n掺杂半导体层具有围绕第一区域的第一区域和第二区域，在n掺杂半导体层的第二区域上形成有源层，p 在有源层上形成掺杂氮化物半导体层。 在p掺杂半导体层上形成p电极。 在n掺杂氮化物半导体层的第一区域上形成n电极。

公开(公告)号：US07268372B2

公开(公告)日：2007-09-11

申请号：US10601597

申请日：2003-06-24

Applicant: Young Ho Park ,  Hun Joo Hahm ,  J ong Seok Na ,  Seung Jin Yoo

Inventor： Young Ho Park ,  Hun Joo Hahm ,  J ong Seok Na ,  Seung Jin Yoo

IPC: H01L29/24 ,  H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L2221/68363

Abstract: Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

Abstract translation: 公开了一种垂直GaN发光二极管及其制造方法。 垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN覆层，形成在第一导电GaN覆层的下表面上的有源层，形成在第一导电GaN覆层 有源层的下表面，形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。 用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤，以防止对结构的GaN单晶面的损坏。

公开(公告)号：US07232191B2

公开(公告)日：2007-06-19

申请号：US11305767

申请日：2005-12-15

Applicant: Kyo Il Lee ,  Young Man Cho ,  Jin-Oh Hahn ,  Seung Han You ,  Seung Jin Yoo

Inventor： Kyo Il Lee ,  Young Man Cho ,  Jin-Oh Hahn ,  Seung Han You ,  Seung Jin Yoo

IPC: B60T8/36

CPC classification number: B60T8/1755 ,  B60T2270/86

Abstract: An apparatus for controlling vehicle stability includes a pressure calculator calculating a brake pressure. In one embodiment, the calculated brake pressure is calculated based on a yaw rate signal input from a yaw rate sensor. In other embodiments, the calculated brake pressure is further calculated on the basis of signals input from a steering angle sensor, a lateral acceleration sensor, a vehicle speeds sensor, and a master brake pressure sensor. A method for controlling vehicle stability is also provided. The method and apparatus enhances stability and reliability during vehicle driving.

Abstract translation: 用于控制车辆稳定性的装置包括计算制动压力的压力计算器。 在一个实施例中，基于从偏航率传感器输入的横摆率信号计算计算出的制动压力。 在其他实施例中，基于从转向角传感器，横向加速度传感器，车速传感器和主制动器压力传感器输入的信号进一步计算计算出的制动压力。 还提供了一种用于控制车辆稳定性的方法。 该方法和装置提高车辆驾驶时的稳定性和可靠性。

公开(公告)号：US07112456B2

公开(公告)日：2006-09-26

申请号：US11115237

申请日：2005-04-27

Applicant: Young Ho Park ,  Hun Joo Hahm ,  Jeong Seok Na ,  Seung Jin Yoo

Inventor： Young Ho Park ,  Hun Joo Hahm ,  Jeong Seok Na ,  Seung Jin Yoo

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L2221/68363

Abstract: Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.

Abstract translation: 公开了一种垂直GaN发光二极管及其制造方法。 垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN包覆层，形成在第一导电GaN包层的下表面上的有源层，形成在第一导电GaN包覆层上的第二导电GaN包覆层 有源层的下表面，形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。 用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤，以防止对结构的GaN单晶面的损坏。

公开(公告)号：US20060131955A1

公开(公告)日：2006-06-22

申请号：US11305767

申请日：2005-12-15

Applicant: Kyo Il Lee ,  Young Man Cho ,  Jin-Oh Hahn ,  Seung Han You ,  Seung Jin Yoo

Inventor： Kyo Il Lee ,  Young Man Cho ,  Jin-Oh Hahn ,  Seung Han You ,  Seung Jin Yoo

IPC: B60T8/60

CPC classification number: B60T8/1755 ,  B60T2270/86

Abstract: An apparatus for controlling vehicle stability includes a virtual pressure calculator calculating a virtual brake pressure. In one embodiment, the virtual brake pressure is calculated based on a yaw rate signal input from a yaw rate sensor. In other embodiments, the virtual brake pressure is further calculated on the basis of signals input from a steering angle sensor, a lateral acceleration sensor, a vehicle speeds sensor, and a master brake pressure sensor. A method for controlling vehicle stability is also provided. The method and apparatus enhances stability and reliability during vehicle driving.

Abstract translation: 用于控制车辆稳定性的装置包括计算虚拟制动压力的虚拟压力计算器。 在一个实施例中，基于从偏航率传感器输入的横摆率信号计算虚拟制动器压力。 在其他实施例中，基于从转向角传感器，横向加速度传感器，车速传感器和主制动器压力传感器输入的信号进一步计算虚拟制动器压力。 还提供了一种用于控制车辆稳定性的方法。 该方法和装置提高车辆驾驶时的稳定性和可靠性。

公开(公告)号：USD556776S1

公开(公告)日：2007-12-04

申请号：US29264496

申请日：2006-10-10

Applicant: Seung Jin Yoo

Designer： Seung Jin Yoo

公开(公告)号：US06902989B2

公开(公告)日：2005-06-07

申请号：US10622466

申请日：2003-07-21

Applicant: Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park

Inventor： Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park

IPC: C30B29/38 ,  C23C16/34 ,  C30B25/02 ,  C30B33/00 ,  H01L21/20

CPC classification number: C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/64 ,  C30B33/00 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02664

Abstract: A method for manufacturing a gallium nitride (GaN)-based single crystalline substrate includes the steps of (a) forming a GaN-based single crystalline bulk on an upper surface of a growth substrate; (b) forming grooves through the growth substrate so that the growth substrate is patterned and divided into several units by the grooves, each of the grooves having a designated width; and (c) separating the GaN-based single crystalline bulk from the growth substrate by irradiating a laser beam on a lower surface of the growth substrate.

Abstract translation: 一种制造基于氮化镓（GaN）的单晶衬底的方法包括以下步骤：（a）在生长衬底的上表面上形成GaN基单晶体; （b）通过生长衬底形成凹槽，使得生长衬底被图案化并且被凹槽分成几个单元，每个凹槽具有指定的宽度; 和（c）通过在生长衬底的下表面上照射激光束将GaN基单晶体与生长衬底分离。

公开(公告)号：US06818531B1

公开(公告)日：2004-11-16

申请号：US10611898

申请日：2003-07-03

Applicant: Seung Jin Yoo ,  In Eung Kim ,  Hun Joo Hahm ,  Young Ho Park ,  Jeong Seok Na

Inventor： Seung Jin Yoo ,  In Eung Kim ,  Hun Joo Hahm ,  Young Ho Park ,  Jeong Seok Na

IPC: H01L2130

CPC classification number: H01L33/0079 ,  Y10S438/977

Abstract: A method for manufacturing vertical GaN light emitting diodes starts by forming a light emitting structure on a sapphire substrate, said light emitting structure including a first conductive GaN clad layer, an active layer and a second conductive GaN clad layer. The light emitting structure is divided into plural units so that the first conductive GaN clad layer of a thickness of at least approximately 100 Å remains. A conductive substrate is attached to the divided upper surface of the light emitting structures using a conductive adhesive layer. A lower surface of the sapphire substrate is irradiated by laser beam so that the sapphire substrate is removed from the unit light emitting structures. First and second contacts are formed respectively on the surfaces of the first conductive clad layer and the conductive substrate. Finally, the resulting structure is cut into plural unit light emitting diodes.

Abstract translation: 通过在蓝宝石衬底上形成发光结构，开始制造垂直GaN发光二极管的方法，所述发光结构包括第一导电GaN覆层，有源层和第二导电GaN覆层。 发光结构被分成多个单元，从而保留至少约100埃的厚度的第一导电GaN覆层。 使用导电性粘合剂层将导电性基板附着到发光结构的分割的上表面。 由激光束照射蓝宝石衬底的下表面，从而将蓝宝石衬底从单位发光结构中去除。 分别在第一导电覆盖层和导电基板的表面上形成第一和第二触点。 最后，将所得到的结构切成多个单位发光二极管。