公开(公告)号：US06914262B2

公开(公告)日：2005-07-05

申请号：US10689630

申请日：2003-10-22

申请人： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

发明人： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

IPC分类号： H01L25/075 ,  H01L27/15 ,  H01L31/12 ,  H01L33/08 ,  H01L33/32 ,  H01L33/44 ,  H01L33/62

CPC分类号： H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  Y10S257/918 ,  H01L2924/00014

摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

公开(公告)号：US07091055B2

公开(公告)日：2006-08-15

申请号：US11087680

申请日：2005-03-24

申请人： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

发明人： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  Y10S257/918 ,  H01L2924/00014

摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

摘要翻译： 公开了一种白色发光二极管及其制造方法。 白色发光二极管包括具有透光性的导电性基板，其表面被划分为第一和第二区域; 第一发光单元，其包括在导电基板的第一区域处的第一覆盖层，第一有源区和第二覆盖层; 第二发光单元，包括第三覆盖层，将具有与从第一有源区域发射的光合成的波长的光发射到白光的第二有源区，以及在导电基板的第二区域处的第四覆盖层; 以及第一，第二和第三电极，连接到导电衬底的第二表面的第一电极，连接到第二覆盖层的第二电极和连接到第四覆盖层的第三电极。

公开(公告)号：US06818531B1

公开(公告)日：2004-11-16

申请号：US10611898

申请日：2003-07-03

申请人： Seung Jin Yoo ,  In Eung Kim ,  Hun Joo Hahm ,  Young Ho Park ,  Jeong Seok Na

发明人： Seung Jin Yoo ,  In Eung Kim ,  Hun Joo Hahm ,  Young Ho Park ,  Jeong Seok Na

IPC分类号： H01L2130

CPC分类号： H01L33/0079 ,  Y10S438/977

摘要： A method for manufacturing vertical GaN light emitting diodes starts by forming a light emitting structure on a sapphire substrate, said light emitting structure including a first conductive GaN clad layer, an active layer and a second conductive GaN clad layer. The light emitting structure is divided into plural units so that the first conductive GaN clad layer of a thickness of at least approximately 100 Å remains. A conductive substrate is attached to the divided upper surface of the light emitting structures using a conductive adhesive layer. A lower surface of the sapphire substrate is irradiated by laser beam so that the sapphire substrate is removed from the unit light emitting structures. First and second contacts are formed respectively on the surfaces of the first conductive clad layer and the conductive substrate. Finally, the resulting structure is cut into plural unit light emitting diodes.

摘要翻译： 通过在蓝宝石衬底上形成发光结构，开始制造垂直GaN发光二极管的方法，所述发光结构包括第一导电GaN覆层，有源层和第二导电GaN覆层。 发光结构被分成多个单元，从而保留至少约100埃的厚度的第一导电GaN覆层。 使用导电性粘合剂层将导电性基板附着到发光结构的分割的上表面。 由激光束照射蓝宝石衬底的下表面，从而将蓝宝石衬底从单位发光结构中去除。 分别在第一导电覆盖层和导电基板的表面上形成第一和第二触点。 最后，将所得到的结构切成多个单位发光二极管。

公开(公告)号：US07067401B2

公开(公告)日：2006-06-27

申请号：US11235278

申请日：2005-09-27

申请人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

发明人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

公开(公告)号：US07018912B2

公开(公告)日：2006-03-28

申请号：US10806432

申请日：2004-03-23

申请人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

发明人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

IPC分类号： H01L21/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US07648849B2

公开(公告)日：2010-01-19

申请号：US11933950

申请日：2007-11-01

申请人： Jae Hoon Lee ,  In Eung Kim ,  Yong Chun Kim ,  Hyun Kyung Kim ,  Moon Heon Kong

发明人： Jae Hoon Lee ,  In Eung Kim ,  Yong Chun Kim ,  Hyun Kyung Kim ,  Moon Heon Kong

IPC分类号： H01L21/00

CPC分类号： H01L33/387 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46

摘要： A flip chip-type nitride semiconductor light emitting diode includes a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.

摘要翻译： 倒装芯片型氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。 网状DBR反射层具有多个开放区域。 网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。 第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。 在网状DBR反射层和p-型氮化物半导体层上形成欧姆接触层。

公开(公告)号：US07095769B2

公开(公告)日：2006-08-22

申请号：US10812029

申请日：2004-03-30

申请人： Sang Ho Yoon ,  Gueorgui Pak ,  In Eung Kim

发明人： Sang Ho Yoon ,  Gueorgui Pak ,  In Eung Kim

IPC分类号： H01S3/098 ,  H01S5/20 ,  H01S5/00

CPC分类号： G11B7/127 ,  H01S5/2004 ,  H01S5/2022 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3216

摘要： A semiconductor laser diode capable of achieving an improvement in kink level and an improvement in catastrophic optical damage (COD) level. The semiconductor laser diode includes a first-conductivity type semiconductor substrate, a first-conductivity type clad layer formed over the substrate, an active layer formed over the first-conductivity type clad layer, a second-conductivity type clad layer formed over the active layer, and provided with a ridge, and a light confining layer formed on the second-conductivity type clad layer, and made of a first-conductivity type semiconductor material, the light confining layer including higher-order mode absorption layers having an energy band gap lower than optical energy produced in the active layer, and refractive index control layers having a refractive index lower than that of the higher-order mode absorption layers. The higher-order mode absorption layers and refractive index control layers are laminated in an alternate manner.

摘要翻译： 能够实现扭结水平提高和灾难性光学损伤（COD）水平改善的半导体激光二极管。 半导体激光二极管包括第一导电型半导体衬底，形成在衬底上的第一导电型覆盖层，形成在第一导电型覆盖层上的有源层，形成在有源层上的第二导电型覆盖层 并且设置有脊，以及形成在第二导电型覆盖层上并由第一导电型半导体材料制成的限光层，所述光限制层包括具有较低能带隙的高阶模吸收层 比在有源层中产生的光能量和折射率低于高阶模吸收层的折射率控制层。 以交替的方式层叠高阶模吸收层和折射率控制层。

公开(公告)号：US5748414A

公开(公告)日：1998-05-05

申请号：US685084

申请日：1996-07-23

申请人： In Eung Kim ,  A. M. Choukh

发明人： In Eung Kim ,  A. M. Choukh

IPC分类号： G11B5/00 ,  G11B5/39

CPC分类号： G11B5/3903 ,  G11B5/3987 ,  G11B2005/0016

摘要： A magnetoresistive (MR) element assembly with a longitudinal bias comprising a MR element, a bias coil, and spaced conductor leads is disclosed. The MR element is formed into an elongated ellipse-like shape with an elongated sense region and two end regions separated by a small nonmagnetic gap thereby reducing the longitudinal demagnetization field within the MR element. An easy axis of magnetization is formed by the MR element and oriented in a direction parallel to the main axis of the element. A bias coil is disposed about the MR element to produce a longitudinal bias field sufficient to maintain the elongated sense region in a single domain state. The elongated ellipse-like shaped MR element features a uniformly reduced demagnetization field for inhibiting the formation of a multi-domain state within the elongated sense region. The MR element assembly thus improves sensitivity of the MR head and suppresses Barkhausen noise in the output of the head.

摘要翻译： 公开了具有包括MR元件，偏置线圈和间隔的导体引线的纵向偏置的磁阻（MR）元件组件。 MR元件形成为细长的椭圆形形状，其具有细长的感测区域和由小的非磁性间隙分开的两个端部区域，从而减小MR元件内的纵向退磁场。 易磁化轴由MR元件形成，并且在平行于元件主轴的方向上取向。 偏置线圈围绕MR元件设置以产生足以将细长的感测区域保持在单个域状态的纵向偏置场。 细长的椭圆形MR元件具有均匀减小的去磁场，用于抑制在细长感测区域内形成多畴状态。 因此，MR元件组件提高了MR头的灵敏度，并抑制了头部输出中的Barkhausen噪声。