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    Multiple tool and structure analysis
    1.
    发明授权
    Multiple tool and structure analysis 有权
    多重工具和结构分析

    公开(公告)号：US07478019B2

    公开(公告)日：2009-01-13

    申请号：US11043196

    申请日：2005-01-26

    申请人： Shahin Zangooie ,  Youxian Wen ,  Heath Pois ,  Jon Opsal

    发明人： Shahin Zangooie ,  Youxian Wen ,  Heath Pois ,  Jon Opsal

    IPC分类号： G06F17/10

    CPC分类号： G01B11/0625 ,  G05B13/024 ,  G05B15/02

    摘要： Measurement data sets for optical metrology systems can be processed in parallel using Multiple Tool and Structure Analysis (MTSA). In an MTSA procedure, at least one parameter that is common to the data sets can be coupled as a global parameter. Setting this parameter as global allows a regression on each data set to contain fewer fitting parameters, making the process is less complex, requiring less processing capacity, and providing more accurate results. MTSA can analyze multiple structures measured on a single tool, or a single structure measured on separate tools. For a multiple tool recipe, a minimized regression solution can be applied back to each tool to determine whether the recipe is optimized. If the recipe does not provide accurate results for each tool, search parameters and/or spaces can be modified in an iterative manner until an optimized solution is obtained that provides acceptable solutions on each tool.

    摘要翻译： 光学测量系统的测量数据集可以使用多工具和结构分析（MTSA）并行处理。 在MTSA过程中，数据集共有的至少一个参数可以作为全局参数进行耦合。 将此参数设置为全局允许每个数据集的回归包含较少的拟合参数，使得该过程不太复杂，需要较少的处理能力，并提供更准确的结果。 MTSA可以分析在单个工具上测量的多个结构，或分析在单独工具上测量的单个结构。 对于多重工具配方，可以将最小化回归解决方案应用回每个工具以确定配方是否被优化。 如果配方不能为每个工具提供准确的结果，则可以以迭代的方式修改搜索参数和/或空格，直到获得优化的解决方案，为每个工具提供可接受的解决方案。

    Multiple tool and structure analysis
    2.
    发明申请
    Multiple tool and structure analysis 有权

    公开(公告)号：US20060167651A1

    公开(公告)日：2006-07-27

    申请号：US11043196

    申请日：2005-01-26

    申请人： Shahin Zangooie ,  Youxian Wen ,  Heath Pois ,  Jon Opsal

    发明人： Shahin Zangooie ,  Youxian Wen ,  Heath Pois ,  Jon Opsal

    IPC分类号： G06F17/18

    CPC分类号： G01B11/0625 ,  G05B13/024 ,  G05B15/02

    摘要： Measurement data sets for optical metrology systems can be processed in parallel using Multiple Tool and Structure Analysis (MTSA). In an MTSA procedure, at least one parameter that is common to the data sets can be coupled as a global parameter. Setting this parameter as global allows a regression on each data set to contain fewer fitting parameters, making the process is less complex, requiring less processing capacity, and providing more accurate results. MTSA can analyze multiple structures measured on a single tool, or a single structure measured on separate tools. For a multiple tool recipe, a minimized regression solution can be applied back to each tool to determine whether the recipe is optimized. If the recipe does not provide accurate results for each tool, search parameters and/or spaces can be modified in an iterative manner until an optimized solution is obtained that provides acceptable solutions on each tool.

    Characterizing films using optical filter pseudo substrate
    4.
    发明授权
    Characterizing films using optical filter pseudo substrate 有权
    使用光学滤光片伪基片表征膜

    公开(公告)号：US08080849B2

    公开(公告)日：2011-12-20

    申请号：US12015795

    申请日：2008-01-17

    申请人： Shahin Zangooie ,  Lin Zhou ,  Sean D. Burns

    发明人： Shahin Zangooie ,  Lin Zhou ,  Sean D. Burns

    IPC分类号： H01L21/00

    CPC分类号： G01N21/8422 ,  G01B11/0625 ,  G01B11/0641 ,  G01B11/0683

    摘要： A system and method of characterizing a parameter of an ultra thin film, such as a gate oxide layer. A system is disclosed that includes a structure having a pseudo substrate positioned below an ultra thin film, wherein the pseudo substrate includes an optical mirror for enhancing an optical response; and a system for characterizing the ultra thin film by applying a light source to the ultra thin film and analyzing the optical response.

    摘要翻译： 表征超薄膜（例如栅极氧化物层）的参数的系统和方法。 公开了一种包括具有位于超薄膜下方的伪衬底的结构的系统，其中所述伪衬底包括用于增强光学响应的​​光学镜; 以及通过将光源施加到超薄膜并分析光学响应来表征超薄膜的系统。

    DETERMINING AZIMUTH ANGLE OF INCIDENT BEAM TO WAFER
    6.
    发明申请
    DETERMINING AZIMUTH ANGLE OF INCIDENT BEAM TO WAFER 失效
    确定入射光束的AZIMUTH角

    公开(公告)号：US20080316471A1

    公开(公告)日：2008-12-25

    申请号：US11766820

    申请日：2007-06-22

    申请人： Shahin Zangooie ,  Roger M. Young ,  Lin Zhou ,  Clemente Bottini ,  Ronald D. Fiege

    发明人： Shahin Zangooie ,  Roger M. Young ,  Lin Zhou ,  Clemente Bottini ,  Ronald D. Fiege

    IPC分类号： G01B11/26

    CPC分类号： G01B11/26

    摘要： A method, system and computer program product for determining an Azimuth angle of an incident beam to a wafer are disclosed. A method comprises: using the incident beam to make a first set of measurements of calibration targets of a first set of grating angles that are different than one another; analyzing the first set of measurements to determine an reference grating angle which corresponds to a grating line to which the incident beam has a practically zero Azimuth angle; and determining the Azimuth angle of the incident beam to the wafer using the determined reference grating angle.

    摘要翻译： 公开了一种用于确定入射光束到晶片的方位角的方法，系统和计算机程序产品。 一种方法包括：使用入射光束对彼此不同的第一组光栅角进行校准目标的第一组测量; 分析第一组测量以确定对应于入射光束具有实际上零方位角的光栅线的参考光栅角度; 以及使用所确定的参考光栅角度确定入射光束到晶片的方位角。

    Optical spot geometric parameter determination using calibration targets
    7.
    发明申请
    Optical spot geometric parameter determination using calibration targets 失效
    使用校准目标的光点几何参数确定

    公开(公告)号：US20080024781A1

    公开(公告)日：2008-01-31

    申请号：US11828666

    申请日：2007-07-26

    申请人： Shahin Zangooie ,  Roger M. Young ,  Lin Zhou ,  Clemente Bottini ,  Ronald D. Fiege

    发明人： Shahin Zangooie ,  Roger M. Young ,  Lin Zhou ,  Clemente Bottini ,  Ronald D. Fiege

    IPC分类号： G01B9/08

    CPC分类号： G03F7/70516

    摘要： A method, system and computer program product for determining a geometric parameter of an optical spot of a light beam are disclosed. A method comprises: providing a calibration target, the calibration target including a systematic variation in a parameter; measuring the calibration target with respect to the systematic variation using the light beam to obtain a plurality of measurements; and analyzing the measurements and the systematic variation to determine the geometric parameter of the optical spot.

    摘要翻译： 公开了一种用于确定光束的光点的几何参数的方法，系统和计算机程序产品。 一种方法包括：提供校准目标，所述校准目标包括参数中的系统变化; 使用光束测量相对于系统变化的校准目标以获得多个测量值; 并分析测量和系统变化，以确定光点的几何参数。

    Etching system and method for forming multiple porous semiconductor regions with different optical and structural properties on a single semiconductor wafer
    8.
    发明授权
    Etching system and method for forming multiple porous semiconductor regions with different optical and structural properties on a single semiconductor wafer 有权
    用于在单个半导体晶片上形成具有不同光学和结构特性的多个多孔半导体区域的蚀刻系统和方法

    公开(公告)号：US08157978B2

    公开(公告)日：2012-04-17

    申请号：US12361736

    申请日：2009-01-29

    申请人： Matthew J. Sendelbach ,  Alok Vaid ,  Shahin Zangooie

    发明人： Matthew J. Sendelbach ,  Alok Vaid ,  Shahin Zangooie

    IPC分类号： C25D5/02 ,  C25D17/00

    CPC分类号： C25F7/00 ,  C25F3/12 ,  C25F3/14 ,  H01L21/3063

    摘要： Disclosed is an electrochemical etching system with localized etching capability. The system allows multiple different porous semiconductor regions to be formed on a single semiconductor wafer. Localized etching is achieved through the use of one or more stationary and/or movable computer-controlled inner containers operating within an outer container. The outer container holds the electrolyte solution and acts as an electrolyte supply source for the inner container(s). The inner container(s) limit the size of the etched region of the semiconductor wafer by confining the electric field. Additionally, the current amount passing through each inner container during the electrochemical etching process can be selectively adjusted to achieve a desired result within the etched region. Localized etching of sub-regions within each etched region can also be achieved through the use of different stationary and/or moveable electrode structures and shields within each inner container. Also disclosed are associated method embodiments.

    摘要翻译： 公开了具有局部蚀刻能力的电化学蚀刻系统。 该系统允许在单个半导体晶片上形成多个不同的多孔半导体区域。 通过使用在外部容器内操作的一个或多个固定和/或可移动计算机控制的内部容器来实现局部蚀刻。 外部容器保持电解质溶液并用作内部容器的电解质供应源。 内部容器通过限制电场来限制半导体晶片的蚀刻区域的尺寸。 此外，可以选择性地调节在电化学蚀刻工艺期间通过每个内部容器的电流量，以在蚀刻区域内实现期望的结果。 每个蚀刻区域内的子区域的局部蚀刻也可以通过在每个内部容器内使用不同的固定和/或可移动的电极结构和屏蔽来实现。 还公开了相关联的方法实施例。

    Alignment correction system and method of use
    9.
    发明授权
    Alignment correction system and method of use 失效
    对准校正系统及其使用方法

    公开(公告)号：US07592817B2

    公开(公告)日：2009-09-22

    申请号：US11778679

    申请日：2007-07-17

    申请人： Robert J. Foster ,  Lin Zhou ,  Shahin Zangooie ,  Roger M. Young ,  Clemente Bottini

    发明人： Robert J. Foster ,  Lin Zhou ,  Shahin Zangooie ,  Roger M. Young ,  Clemente Bottini

    IPC分类号： G01R31/08 ,  G01R31/02 ,  G01R31/26

    CPC分类号： G01B7/30 ,  G05B15/02 ,  H01L21/68

    摘要： A system and method for correcting alignment of a product on a tool and, more particularly, to a system and method for correcting alignment of a wafer on a chuck of a tool. The system is a tool comprising at least one contact near a circumference of the tool and a grounded contact proximate to the at least one contact. The method comprises measuring current on each branch of a circuit and calculating an angle of a wafer based on a difference in the current on each branch of the circuit.

    摘要翻译： 一种用于校正工具上的产品对准的系统和方法，更具体地，涉及一种用于校正工具的卡盘上的晶片对准的系统和方法。 该系统是一种工具，其包括在工具的圆周附近的至少一个触点和靠近该至少一个触点的接地触点。 该方法包括测量电路的每个分支上的电流，并且基于电路的每个分支上的电流差来计算晶片的角度。

    WAFER AND STAGE ALIGNMENT USING PHOTONIC DEVICES
    10.
    发明申请
    WAFER AND STAGE ALIGNMENT USING PHOTONIC DEVICES 失效
    使用光电器件的波形和阶段对准

    公开(公告)号：US20090002721A1

    公开(公告)日：2009-01-01

    申请号：US11770105

    申请日：2007-06-28

    申请人： Shahin Zangooie ,  Lin Zhou

    发明人： Shahin Zangooie ,  Lin Zhou

    IPC分类号： G01B11/14

    CPC分类号： G01B11/002

    摘要： A position sensing system for an optical metrology system, includes a plurality of photonic devices distributed on a carrier for providing a photonic response when interrogated with a measuring light, wherein a collective photonic response from the plurality indicates the position of the carrier. A method and an optical metrology system are also provided.

    摘要翻译： 用于光学测量系统的位置感测系统包括分布在载体上的多个光子器件，用于当用测量光询问时提供光子响应，其中来自多个的集体光子响应指示载体的位置。 还提供了一种方法和光学测量系统。