摘要:
A process for inhibiting the passage of dopant from a gate electrode into a thin gate oxide comprises nitridation of the upper surface of the thin gate oxide, prior to formation of the gate electrode over the gate oxide, to thereby form a barrier of nitrogen atoms in the upper surface region of the gate oxide adjacent the interface between the gate oxide and the gate electrode to inhibit passage of dopant atoms from the gate electrode into the thin gate oxide during annealing of the structure. In one embodiment, a selective portion of silicon oxide on a silicon substrate may be etched to thin the oxide to the desired thickness using a nitrogen plasma with a bias applied to the silicon substrate. Nitridation of the surface of the etched silicon oxide is then carried out in the same apparatus by removing the bias from the silicon substrate.
摘要:
A process for etching oxide is disclosed wherein a reproducibly accurate and uniform amount of silicon oxide can be removed from a surface of an oxide previously formed over a semiconductor substrate by exposing the oxide to a nitrogen plasma in an etch chamber while applying an rf bias to a substrate support on which the substrate is supported in the etch chamber. The thickness of the oxide removed in a given period of time may be changed by changing the amount of rf bias applied to the substrate through the substrate support.
摘要:
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
摘要:
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
摘要:
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.
摘要:
The invention provides a method of performing process window compliant corrections of a design layout. The invention includes an operator performing the following steps: (1) simulating Develop Inspect Critical Dimension (DI CD) at best exposure conditions using the provided original layout pattern; (2) simulating DI CD at predefined boundary exposure conditions using the provided original layout pattern; (3) if the DI CD from step (1) meets the target DI CD definition, and the DI CD from step (2) meets process window specifications, convergence takes place; and (4) modifying the layout pattern and repeating steps (2) through (3) until DI CD from step (2) reaches the specification limit if any portion of step (3) is not achieved.
摘要:
The present invention provides methods and apparatus for accomplishing a phase shift lithography process using a blocker to block zero order light to improve image quality for phase shift lithography systems and methodologies. A maskless lithography system is provided. The lithography system provided uses a phase shift pattern generator which projects a phase shift image pattern along an optical path onto a photoimageable layer of a substrate in order to facilitate pattern transfer. A blocking element is interposed in the optical path to block zero order light in the image pattern, thereby improving image quality.
摘要:
The tilt and position of individually controllable element are simultaneously adjusted to allow a greater range of contrasts to be achieved. This can also be used to compensate for cupping of individually controllable elements. Simultaneous adjustment of both the position and tilt of the individually controllable elements can be achieved by two electrodes operable over a range of values.
摘要:
A method for obtaining an optimal reflectivity value for complex multilayer stacks is disclosed. Aspects of the present invention include generating a model of a multilayer stack and parameterizing each layer by a thickness and an index of refraction; allowing a user to input values for the parameters; calculating an extrema for a cost function of reflectivity R using the input parameter values; calculating sensitivity values S for the extrema points; and obtaining an optimal value by calculating a cost function R+S.
摘要:
A method and system of optimizing the illumination of a mask in a photolithography process. A specific, preferred method includes the steps of: loading minimum design rules of a layout, loading exposure latitude constraints, loading mask error constraints, loading initial illumination conditions, simulating current illumination conditions, obtaining dose-to-print threshold from the minimum design rules (i.e., lines-and-space feature), applying OPC on the layout using the dose-to-print threshold, calculating DOF using the exposure latitude and mask error constraints, changing the illumination conditions in order to attempt to maximize common DOF with the exposure latitude and mask error constraints, and continuing the process until maximum common DOF is obtained.