PLATEN CONTROL
    1.
    发明申请
    PLATEN CONTROL 有权
    板控制

    公开(公告)号:US20120088035A1

    公开(公告)日:2012-04-12

    申请号:US13270644

    申请日:2011-10-11

    IPC分类号: C23C14/48 B21C51/00

    CPC分类号: H01L21/67109 H01L21/67288

    摘要: A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.

    摘要翻译: 公开了一种用于保持期望的压板平整度的系统和方法。 激光系统用于测量压板的平整度。 然后改变压板的温度以达到所需的平坦度水平。 在一些实施例中,该激光系统仅在建立周期期间使用,然后在正常操作期间使用所得到的期望温度。 在其他实施例中,即使在正在处理工件时,也使用激光系统来测量压板的平坦度。

    Platen control
    2.
    发明授权
    Platen control 有权
    压板控制

    公开(公告)号:US09012337B2

    公开(公告)日:2015-04-21

    申请号:US13270644

    申请日:2011-10-11

    CPC分类号: H01L21/67109 H01L21/67288

    摘要: A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.

    摘要翻译: 公开了一种用于保持期望的压板平整度的系统和方法。 激光系统用于测量压板的平整度。 然后改变压板的温度以达到所需的平坦度水平。 在一些实施例中,该激光系统仅在建立周期期间使用,然后在正常操作期间使用所得到的期望温度。 在其他实施例中,即使在正在处理工件时,也使用激光系统来测量压板的平坦度。

    Ion beam tuning
    3.
    发明授权
    Ion beam tuning 有权
    离子束调谐

    公开(公告)号:US08330125B2

    公开(公告)日:2012-12-11

    申请号:US12887068

    申请日:2010-09-21

    IPC分类号: H01J37/10

    摘要: A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.

    摘要翻译: 束线离子注入机包括被配置为产生离子束的离子源,扫描器,被配置为扫描离子束以产生具有从扫描原点发散的轨迹的扫描离子束;以及聚焦元件,其具有位于 扫描器被配置为将离子束聚焦到扫描原点处的焦点。 离子束调谐的方法包括产生离子束,将离子束聚焦到位于扫描原点的焦点,并扫描离子束以产生具有与扫描原点分离的轨迹的扫描离子束。

    ION BEAM TUNING
    4.
    发明申请
    ION BEAM TUNING 有权
    离子束调谐

    公开(公告)号:US20120068081A1

    公开(公告)日:2012-03-22

    申请号:US12887068

    申请日:2010-09-21

    摘要: A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.

    摘要翻译: 束线离子注入机包括被配置为产生离子束的离子源,扫描器,被配置为扫描离子束以产生具有从扫描原点发散的轨迹的扫描离子束;以及聚焦元件,其具有位于 扫描器被配置为将离子束聚焦到扫描原点处的焦点。 离子束调谐的方法包括产生离子束,将离子束聚焦到位于扫描原点的焦点,并扫描离子束以产生具有与扫描原点分离的轨迹的扫描离子束。

    Ion beam implant current, spot width and position tuning
    5.
    发明授权
    Ion beam implant current, spot width and position tuning 有权
    离子束注入电流,光斑宽度和位置调整

    公开(公告)号:US07442944B2

    公开(公告)日:2008-10-28

    申请号:US10960904

    申请日:2004-10-07

    IPC分类号: H01J37/317

    摘要: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

    摘要翻译: 公开了用于调整离子注入机系统的离子束调谐方法,系统和程序产品。 本发明通过例如扫描离子束通过植入室内的轮廓仪获得离子束的离子束轮廓; 并调整离子注入系统,以根据离子束轮廓最大化估计的注入电流,以同时优化总离子束电流和离子束斑点宽度,并最大化注入电流。 此外,调谐还可以基于点光束中心的反馈沿着期望的离子束路径定位离子束,其通过减少离子束建立时间改善离子注入系统的生产率和性能,并为每个离子提供可重复的射束角度性能 横跨许多设置。

    Ion beam contamination determination
    6.
    发明授权
    Ion beam contamination determination 有权
    离子束污染测定

    公开(公告)号:US07402820B2

    公开(公告)日:2008-07-22

    申请号:US11289885

    申请日:2005-11-30

    IPC分类号: H01L21/425 H01J37/317

    摘要: A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

    摘要翻译: 公开了一种用于确定离子束污染的系统,方法和程序产品。 在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下,可以测量离子束中的第三离子并基于量 测量的第三离子,与预期离子相比的污染物离子的相对量。 污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

    Technique for uniformity tuning in an ion implanter system
    8.
    发明授权
    Technique for uniformity tuning in an ion implanter system 有权
    离子注入机系统均匀性调整技术

    公开(公告)号:US07253423B2

    公开(公告)日:2007-08-07

    申请号:US11135307

    申请日:2005-05-24

    IPC分类号: H01J37/302

    摘要: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for uniformity tuning in an ion implanter system. The method may comprise measuring an ion beam at a plurality of predetermined locations along a beam path. The method may also comprise calculating an ion beam profile along the beam path based at least in part on the ion beam measurements at the plurality of predetermined locations. The method may further comprise determining a desired velocity profile along the beam path based at least in part on the calculated ion beam profile such that the ion beam, when scanned according to the desired velocity profile, produces a desired ion beam profile along the beam path.

    摘要翻译: 公开了一种用于离子注入机系统中均匀性调谐的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于离子注入机系统中的均匀性调谐的方法。 该方法可以包括在沿着光束路径的多个预定位置处测量离子束。 该方法还可以包括至少部分地基于多个预定位置处的离子束测量来计算沿着光束路径的离子束分布。 该方法可以进一步包括至少部分地基于所计算的离子束分布来确定沿着光束路径的期望速度分布,使得当根据期望的速度分布扫描时,离子束沿着光束路径产生期望的离子束分布 。

    Technique for tuning an ion implanter system
    9.
    发明授权
    Technique for tuning an ion implanter system 有权
    调整离子注入机系统的技术

    公开(公告)号:US07397047B2

    公开(公告)日:2008-07-08

    申请号:US11123082

    申请日:2005-05-06

    IPC分类号: H01J37/302

    摘要: A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.

    摘要翻译: 公开了一种用于调整离子注入机系统的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于调整具有多个光束线元件的离子注入系统的方法。 该方法可以包括在多个波束线元件之间建立一个或多个关系。 该方法还可以包括至少部分地基于一个或多个已建立的关系以协调的方式调整多个光束线元件以产生期望的光束输出。

    Weakening focusing effect of acceleration-deceleration column of ion implanter
    10.
    发明授权
    Weakening focusing effect of acceleration-deceleration column of ion implanter 有权
    离子注入机加速减速柱弱化聚焦效应

    公开(公告)号:US07045799B1

    公开(公告)日:2006-05-16

    申请号:US10993346

    申请日:2004-11-19

    IPC分类号: H01J37/317

    摘要: A method and apparatus for weakening a strong focus effect of an acceleration-deceleration column of an ion implanter during a deceleration mode are disclosed. The apparatus includes a tube lens surrounding the ion beam adjacent to a deceleration lens of the acceleration-deceleration column. The tube lens causes a defocusing of the ion beam at the entrance of the tube lens, which reduces the ion dispersion problem generated by the column. The invention also includes an accel-decel column and ion implanter incorporating the tube lens. An additional deceleration-suppression electrode may also be added subsequent to the tube lens for confining electrons within the tube lens.

    摘要翻译: 公开了一种用于在减速模式期间减弱离子注入机的加速 - 减速列的强焦点效应的方法和装置。 该装置包括围绕加速减速柱的减速透镜的离子束的管透镜。 管透镜引起离子束在管透镜入口处的散焦,这降低了柱产生的离子色散问题。 本发明还包括加速减速柱和并入管透镜的离子注入机。 还可以在管透镜之后添加附加减速抑制电极,以将电子限制在管透镜内。