公开(公告)号：US07402820B2

公开(公告)日：2008-07-22

申请号：US11289885

申请日：2005-11-30

申请人： Russell Low ,  Joseph C. Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

发明人： Russell Low ,  Joseph C. Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

IPC分类号： H01L21/425 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/31705 ,  H01L22/12

摘要： A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

摘要翻译： 公开了一种用于确定离子束污染的系统，方法和程序产品。 在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下，可以测量离子束中的第三离子并基于量 测量的第三离子，与预期离子相比的污染物离子的相对量。 污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

公开(公告)号：US20070241276A1

公开(公告)日：2007-10-18

申请号：US11289885

申请日：2005-11-30

申请人： Russell Low ,  Joseph Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

发明人： Russell Low ,  Joseph Olson ,  Antonella Cucchetti ,  Anthony Renau ,  Marie Welsch

IPC分类号： B01D59/44

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/31705 ,  H01L22/12

摘要： A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

摘要翻译： 公开了一种用于确定离子束污染的系统，方法和程序产品。 在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下，可以测量离子束中的第三离子并基于量 测量的第三离子，与预期离子相比的污染物离子的相对量。 污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

公开(公告)号：US20110124186A1

公开(公告)日：2011-05-26

申请号：US12947078

申请日：2010-11-16

申请人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

发明人： Anthony Renau ,  Ludovic Godet ,  Timothy J. Miller ,  Joseph C. Olson ,  Vikram Singh ,  James Buonodono ,  Frank Sinclair ,  Deepak A. Ramappa ,  Russell Low ,  Atul Gupta ,  Kevin M. Daniels

IPC分类号： H01L21/265 ,  G21K5/10

CPC分类号： B01J19/081 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0453 ,  H01J2237/1205 ,  H01L21/2236 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/08 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

摘要翻译： 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。

公开(公告)号：US20070178678A1

公开(公告)日：2007-08-02

申请号：US11342183

申请日：2006-01-28

申请人： Christopher Hatem ,  Jonathan England ,  Larry Sneddon ,  Russell Low ,  Anthony Renau ,  Alexander Perel ,  Kourosh Saadatmand

发明人： Christopher Hatem ,  Jonathan England ,  Larry Sneddon ,  Russell Low ,  Anthony Renau ,  Alexander Perel ,  Kourosh Saadatmand

IPC分类号： H01L21/26

CPC分类号： H01J37/08 ,  C23C14/48 ,  H01J27/02 ,  H01J37/3171

摘要： Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.

摘要翻译： 提供了用于其的离子注入和离子源的方法。 该方法涉及从包含多个元素的源馈送气体产生离子。 例如，源原料气体可以包含硼和至少两个其它元素（例如，X a，B B，B和C）。 使用这种源进料气体可以产生比某些常规方法多的优点，包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。 此外，在某些实施方案中，源进料气体的组成可以选择为在相对较高的温度（例如，大于350℃）下是热稳定的，其允许在许多常规离子源中使用这种气体（例如，间接加热 阴极（IHC），伯纳斯）在使用过程中产生这种温度。

公开(公告)号：US20060169915A1

公开(公告)日：2006-08-03

申请号：US11269033

申请日：2005-11-08

申请人： Joseph Olson ,  Anthony Renau ,  Donna Smatlak ,  Kurt Deckerlucke ,  Paul Murphy ,  Alexander Perel ,  Russell Low ,  Peter Kurunczi

发明人： Joseph Olson ,  Anthony Renau ,  Donna Smatlak ,  Kurt Deckerlucke ,  Paul Murphy ,  Alexander Perel ,  Russell Low ,  Peter Kurunczi

IPC分类号： H01L21/336 ,  H01J27/00

CPC分类号： H01J37/08 ,  H01J27/08 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/0825 ,  H01J2237/0827 ,  H01J2237/31701

摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

摘要翻译： 提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。 在一些实施例中，第一和第二电子源位于电弧室的相对端。 第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。 在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。 在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

公开(公告)号：US08143604B2

公开(公告)日：2012-03-27

申请号：US11394824

申请日：2006-03-31

申请人： Russell Low ,  Piortr R. Lubicki ,  D. Jeffrey Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph C. Olson

发明人： Russell Low ,  Piortr R. Lubicki ,  D. Jeffrey Lischer ,  Steve Krause ,  Eric Hermanson ,  Joseph C. Olson

IPC分类号： G21G5/00 ,  H01J37/08

CPC分类号： H01J37/16 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/038

摘要： An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.

摘要翻译： 离子注入系统包括被配置为提供离子束的离子源，限定空腔的端子结构，至少部分地设置在空腔内的离子源和绝缘体系统。 绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。 还提供了一种用于对离子注入系统的气体箱进行电绝缘的气体箱绝缘体系统。

公开(公告)号：US07576337B2

公开(公告)日：2009-08-18

申请号：US11620595

申请日：2007-01-05

申请人： Piotr Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

发明人： Piotr Lubicki ,  Russell Low ,  Steve Krause ,  Eric Hermanson

IPC分类号： H01J37/08

CPC分类号： H02M7/103

摘要： A power supply system for an ion implantation system. In one particular exemplary embodiment, the system may be realized as a power supply system that includes a low frequency power inverter, a stack driver and a high voltage power generation unit that receives source power from the power inverter. The high voltage generation unit may include a high voltage transformer for providing an output power that is multiplied to a desired output level and delivered to an input terminal of an ion beam accelerator. The power supply system may also include a dielectric enclosure that encases at least a portion of the high voltage power generation unit, thereby preventing variation in the break down strength of the internal components.

摘要翻译： 一种用于离子注入系统的电源系统。 在一个具体示例性实施例中，系统可以被实现为包括低功率逆变器，堆栈驱动器和从电力逆变器接收电力源的高压发电单元的电源系统。 高电压发生单元可以包括高压变压器，用于提供乘以期望输出电平并被输送到离子束加速器的输入端的输出功率。 供电系统还可以包括封装高压发电单元的至少一部分的电介质外壳，从而防止内部元件的分解强度的变化。

公开(公告)号：US20080072413A1

公开(公告)日：2008-03-27

申请号：US11194260

申请日：2005-08-01

申请人： Stephen Krause ,  Eric R. Cobb ,  Russell Low

发明人： Stephen Krause ,  Eric R. Cobb ,  Russell Low

IPC分类号： B23Q3/18 ,  H01J9/18 ,  H05H1/24

CPC分类号： H01J9/18 ,  Y10T29/49895 ,  Y10T29/49899 ,  Y10T29/53909

摘要： A method and clamp system for use on an ion implanter system for aligning a cathode and filament relative to one another in-situ are disclosed. The invention includes a clamp system having a clamp including a first clamp member separably coupled to a second clamp member, and an opening to a mount portion of one of the cathode and the filament in at least one of the clamp members. Each clamp member includes a surface to engage a mount portion of one of the cathode and the filament. The opening is adapted to receive a positioning tool to position the cathode and the filament relative to one another by moving the mount portion when the clamp is released. The mount portion may include a tool receiving member to facilitate accurate positioning.

摘要翻译： 公开了一种用于离子注入机系统的方法和夹紧系统，用于将阴极和细丝相对于彼此原位排列。 本发明包括具有夹具的夹具系统，该夹具包括可分离地联接到第二夹紧构件的第一夹紧构件以及至少一个夹紧构件中的阴极和细丝之一的安装部分的开口。 每个夹持构件包括与阴极和细丝之一的安装部分接合的表面。 开口适于接收定位工具以通过在夹具被释放时移动安装部分来相对于彼此定位阴极和灯丝。 安装部分可以包括工具接收构件以便于精确定位。

公开(公告)号：US20060219954A1

公开(公告)日：2006-10-05

申请号：US11241894

申请日：2005-09-30

申请人： Russell Low ,  Joseph Olson ,  David Timberlake ,  James McLane ,  Mark Saunders ,  James Cummings ,  Thomas Callahan ,  Jonathan England

发明人： Russell Low ,  Joseph Olson ,  David Timberlake ,  James McLane ,  Mark Saunders ,  James Cummings ,  Thomas Callahan ,  Jonathan England

IPC分类号： H01J37/08 ,  G21K5/10

CPC分类号： H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/31761 ,  Y10S438/961

摘要： An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer. The operating parameter may be an output voltage of an extraction power supply, or other voltages and/or currents of beamline components that affect the path of the ion beam.

摘要翻译： 离子注入机包括静止的平面离子束的源，一组束线分量，其通过由第一操作参数值确定的沿正常光束路径引导离子束;终端，其通过正常光束路径机械扫描晶片 以及在注入期间响应于离子束中的毛刺的控制电路通过（1）立即将至少一个束线分量的操作参数改变为第二值，以将离子束引导离开正常光束路径，从而 在晶片上的植入转变位置处停止植入，（2）随后将晶片移动到植入恢复位置，其中晶片上的注入转变位置直接位于离子束的正常路径上，并且（3） 操作参数到其第一值以引导离子束沿着正常光束路径并在晶片上的注入转变位置处恢复离子注入。 操作参数可以是提取电源的输出电压，或影响离子束路径的束线组件的其他电压和/或电流。

公开(公告)号：US20060163489A1

公开(公告)日：2006-07-27

申请号：US11044659

申请日：2005-01-27

申请人： Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

发明人： Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

IPC分类号： H01J27/00

CPC分类号： H01J27/08

摘要： An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.

摘要翻译： 离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有围绕开口的中心部分。 陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。 导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。 端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。 绝缘体内表面可以具有脊状横截面。