摘要:
According to one embodiment, a pattern formation device that presses a template that includes a concave and convex part onto a transferring object and that forms a pattern in which a shape of the concave and convex part is transferred is provided. The device includes: a calculation part; an adjustment part; and a transfer. The calculation part calculates, using design information of the pattern, the distribution of force applied to the pattern at a time of releasing the template pressed onto the transferring object from the transferring object. The adjustment part adjusts forming conditions of the pattern in order to uniformly approach the distribution of force calculated by the calculation part. The transfer part transfers the shape of the concave and convex part to the transferring object according to the forming conditions adjusted by the adjustment part.
摘要:
A lithography simulation method includes: taking in design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of an energy ray; obtaining the latent image of the pattern by calculation of an intensity of the energy ray; locally changing, at least in a portion corresponding to a pattern to be interested, a relative position in a direction of the intensity of the energy ray between a latent image curve and a reference intensity line in accordance with a distance between the pattern to be interested and a pattern of a neighboring region, the latent image curve being an intensity distribution curve of the energy ray constituting the latent image, the reference intensity line being defined to specify a position of an edge of the pattern to be interested; and calculating a distance between intersections of a portion of the latent image curve corresponding to the pattern to be interested and the reference intensity line in the changed relative position to define an interested line width of the pattern to be interested.
摘要:
An aligner evaluation system includes (a) an error calculation module configured to calculate error information on mutual optical system errors among a plurality of aligners; (b) a simulation module configured to simulate device patterns to be delineated by each of the aligners based on the error information; and (c) a evaluation module configured to evaluate whether each of the aligners has appropriate performances for implementing an organization of a product development machine group based on the simulated device pattern.
摘要:
There is disclosed a pattern correcting method comprising extracting a correction pattern, at least the one or more correction patterns being included in a first design pattern formed on a substrate, acquiring layout information from the first design pattern, the layout information affecting a finished plane shape of the correction pattern on the substrate, determining contents of correction onto the correction pattern on the basis of the layout information, generating a design pattern-2 corresponding to the layout information so as to be associated with the correction pattern, and correcting the correction pattern in accordance with the contents of correction corresponding to the design pattern-2.
摘要:
There is disclosed a method of producing a design layout by optimizing at least one of design rule, process proximity correction parameter and process parameter, including calculating a processed pattern shape based on a design layout and a process parameter, extracting a dangerous spot having an evaluation value with respect to the processed pattern shape, which does not satisfy a predetermined tolerance, generating a repair guideline of the design layout based on a pattern included in the dangerous spot, and repairing that portion of the design layout which corresponds to the dangerous spot based on the repair guideline.
摘要:
A design pattern correcting method of correcting a design pattern in relation to a minute step of the design pattern, is disclosed, which comprises extracting at least one of two edges extended from a vertex of the design pattern, measuring a length of the extracted edge, determining whether or not the length of the measured edge is shorter than a predetermined value, extracting two vertexes connected to the extracted edge if it is determined that the length of the extracted edge is shorter than the predetermined value, and reshaping the design pattern to match positions of the two extracted vertexes with each other.
摘要:
A pattern verification method comprising preparing a desired pattern and a mask pattern forming the desired pattern on a substrate, defining at least one evaluation point on an edge of the desired pattern, defining at least one process parameter to compute the transferred/formed pattern, defining a reference value and a variable range for each of the process parameters, computing a positional displacement for each first points corresponding to the evaluation point, first points computed using correction mask pattern and a plurality of combinations of parameter values obtained by varying the process parameters within the variable range or within the respective variable ranges, the positional displacement being displacement between first point and the evaluation point, computing a statistics of the positional displacements for each of the evaluation points, and outputting information modifying the mask pattern according to the statistics.
摘要:
An embodiment provides a method of preparing a pattern. In the pattern preparing method, when mask patterns corresponding to on-substrate patterns are prepared to form the on-substrate patterns corresponding to design patterns, the mask patterns are prepared based on a correlation which needs to be satisfied between the design patterns so that a relation which same the correlation can be satisfied between the mask patterns corresponding to the design patterns.
摘要:
A method for verifying mask pattern data includes preparing design circuit data on a design circuit which realizes a desired electrical operation. Data on a design circuit pattern having a structure which realizes the design circuit on a semiconductor substrate is prepared. Mask pattern data on a pattern of a mask used in order to produce the design circuit pattern is prepared. A circuit pattern which is to be obtained by processing a film using the pattern of the mask indicated by the mask pattern data is acquired. Circuit data on a circuit realized by at least a first part of the circuit pattern is produced. A circuit mismatch part where the circuit data and a part of the design circuit data which corresponds to the first part of the circuit pattern do not match up is detected.
摘要:
A pattern verification method includes preparing a desired pattern and a mask pattern forming the desired pattern on a substrate, defining at least one evaluation point on an edge of the desired pattern, defining at least one process parameter to compute the transferred/formed pattern, defining a reference value and a variable range for each of the process parameters, and computing a positional displacement for each first points corresponding to the evaluation point, first points computed using correction mask pattern and a plurality of combinations of parameter values obtained by varying the process parameters within the variable range or within the respective variable ranges. The positional displacement is a displacement between first point and the evaluation point. The method further includes computing a statistics of the positional displacements for each of the evaluation points, and outputting information modifying the mask pattern according to the statistics.