公开(公告)号：US20100163179A1

公开(公告)日：2010-07-01

申请号：US12086634

申请日：2006-12-12

申请人： Shigeki Tozawa ,  Yusuke Muraki ,  Tadashi Iino ,  Daisuke Hayashi

发明人： Shigeki Tozawa ,  Yusuke Muraki ,  Tadashi Iino ,  Daisuke Hayashi

IPC分类号： B08B13/00

CPC分类号： H01L21/02057 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

摘要： [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber.[Means for Solving] An apparatus housing and processing a substrate W in a chamber includes a hydrogen fluoride gas supply path 61 for supplying a hydrogen fluoride gas into a chamber 40, wherein a part or whole of an inner surface of the chamber 40 is formed of Al or Al alloy which has not been subjected to surface oxidation treatment. The chamber 40 includes a lid 52 closing an upper opening of a chamber main body 51, and at least an inner surface of the lid 52 is formed of the Al or Al alloy which has not been subjected to alumite treatment.

摘要翻译： [问题]提供一种能够防止氟化氢与室的内表面粘附的基板处理装置。 [解决手段]在室内容纳和处理基板W的装置包括用于将氟化氢气体供应到室40中的氟化氢气体供给路径61，其中形成室40的内表面的一部分或全部 的未经表面氧化处理的Al或Al合金。 室40包括封闭室主体51的上开口的盖52，并且盖52的至少内表面由未进行防氧化处理的Al或Al合金形成。

公开(公告)号：US20090242129A1

公开(公告)日：2009-10-01

申请号：US12409664

申请日：2009-03-24

申请人： Tadashi Onishi ,  Shigeki Tozawa ,  Yusuke Muraki ,  Takafumi Nitoh

发明人： Tadashi Onishi ,  Shigeki Tozawa ,  Yusuke Muraki ,  Takafumi Nitoh

IPC分类号： B44C1/22 ,  C23C16/46

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/67109

摘要： A heat treatment apparatus for heat-treating a silicon substrate includes a mounting table for mounting and heating the silicon substrate thereon, wherein a cover made of any of silicon, silicon carbide, and aluminum nitride is placed on an upper surface of the mounting table. By covering the upper surface of the mounting table by the cover made of silicon or the like, metal contamination of the lower surface of the silicon substrate is suppressed.

摘要翻译： 用于热处理硅衬底的热处理设备包括用于在其上安装和加热硅衬底的安装台，其中由硅，碳化硅和氮化铝中的任何一个制成的盖子被放置在安装台的上表面上。 通过用硅等覆盖安装台的上表面，抑制了硅衬底的下表面的金属污染。

公开(公告)号：US09105586B2

公开(公告)日：2015-08-11

申请号：US12078958

申请日：2008-04-08

申请人： Shigeki Tozawa ,  Yusuke Muraki

发明人： Shigeki Tozawa ,  Yusuke Muraki

IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/31138 ,  H01L21/67069 ,  H01L21/67155

摘要： An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching method further includes etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, and etching the first oxide film by a dry process using a gas containing HF, thereby expanding a portion of the hole adjacent to an upper side of the contact portion and inside the first oxide film.

摘要翻译： 蚀刻方法包括制备目标物体，使得在基板上形成由含有B和P中的至少一个的氧化硅制成的第一氧化物膜，在不含有B和P的氧化硅中形成的第二氧化物膜形成在 第一氧化物膜和接触部分存在于第一氧化物膜和第二氧化物膜之间的界面之下。 蚀刻方法还包括蚀刻第二氧化物膜和第一氧化物膜，从而形成到达接触部分的孔，并且通过使用含有HF的气体的干法来蚀刻第一氧化物膜，从而使孔的一部分与 接触部分的上侧和第一氧化膜内部。

公开(公告)号：US20110035957A1

公开(公告)日：2011-02-17

申请号：US12439960

申请日：2007-12-20

申请人： Yusuke Muraki ,  Shigeki Tozawa

发明人： Yusuke Muraki ,  Shigeki Tozawa

IPC分类号： F26B25/00

CPC分类号： H01L21/31116 ,  H01L21/02057 ,  H01L21/67173 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748

摘要： A gas processing apparatus includes a chamber 40 configured to accommodate a wafer W; a transfer mechanism 17 configured to continuously transfer a plurality of wafers W one by one into the chamber 40; a gas supply mechanism configured to supply into the chamber 40 a process gas having a clinging property and prepared for performing a gas process on each of the wafers W; and a control section 90 preset to control the gas supply mechanism and the transfer mechanism to supply the process gas into the chamber before transferring a first target object into the chamber, and then to transfer the first target object into the chamber after the elapse of a predetermined time.

摘要翻译： 气体处理装置包括：构造成容纳晶片W的室40; 传送机构17，被配置为将多个晶片W一个一个地连续地传送到室40中; 气体供给机构，其构造成向所述室40供给具有附着性并且准备用于对所述晶片W进行气体处理的处理气体; 以及控制部90，用于控制气体供给机构和传送机构，以在将第一目标物体转移到室内之前将处理气体供给到室中，然后在经过了第一目标物体之后将第一目标物体转移到室中 预定时间

公开(公告)号：US20100216296A1

公开(公告)日：2010-08-26

申请号：US12084132

申请日：2006-10-20

申请人： Yusuke Muraki ,  Shigeki Tozawa ,  Takehiko Orii

发明人： Yusuke Muraki ,  Shigeki Tozawa ,  Takehiko Orii

IPC分类号： H01L21/20 ,  H01L21/306

CPC分类号： H01L29/165 ,  H01L21/02057 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： [Object] To provide a processing method capable of removing an oxide film adhering on a Si layer from the Si layer without adversely affecting parts other than the oxide film and capable of surely forming a SiGe layer with good film quality without roughening the crystal structure of a surface of the Si layer from which the oxide film has been removed, and to provide a recording medium.[Means for Solving the Problems] A processing method for removing an oxide film growing on a surface of a Si layer, and forming a SiGe layer on the surface of the exposed Si layer includes: supplying gas containing a halogen element and basic gas to the surface of the Si layer, and causing the oxide film growing on the surface of the Si layer to chemically react with the gas containing the halogen element and the basic gas to turn the oxide film into a reaction product; removing the reaction product by heating; and thereafter forming the SiGe layer on the surface of the exposed Si layer.

摘要翻译： 本发明提供一种能够从Si层除去附着在Si层上的氧化膜的处理方法，而不会不利地影响氧化膜以外的部分，并且能够确保形成具有良好膜质量的SiGe层，而不会使晶体结构变粗糙 已经除去氧化膜的Si层的表面，并提供记录介质。 解决问题的手段用于去除在Si层表面生长的氧化膜并在暴露的Si层的表面上形成SiGe层的处理方法包括：将含有卤素元素和碱性气体的气体供给到 使Si层表面生长的氧化膜与含有卤素元素和碱性气体的气体发生化学反应，将氧化膜转化成反应产物; 通过加热除去反应产物; 然后在暴露的Si层的表面上形成SiGe层。

公开(公告)号：US20080254636A1

公开(公告)日：2008-10-16

申请号：US12078958

申请日：2008-04-08

申请人： Shigeki Tozawa ,  Yusuke Muraki

发明人： Shigeki Tozawa ,  Yusuke Muraki

IPC分类号： H01L21/306

CPC分类号： H01L21/31138 ,  H01L21/67069 ,  H01L21/67155

摘要： An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching method further includes etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, and etching the first oxide film by a dry process using a gas containing HF, thereby expanding a portion of the hole adjacent to an upper side of the contact portion and inside the first oxide film.

摘要翻译： 蚀刻方法包括制备目标物体，使得在基板上形成由含有B和P中的至少一个的氧化硅制成的第一氧化物膜，在不含有B和P的氧化硅中形成的第二氧化物膜形成在 第一氧化物膜和接触部分存在于第一氧化物膜和第二氧化物膜之间的界面之下。 蚀刻方法还包括蚀刻第二氧化物膜和第一氧化物膜，从而形成到达接触部分的孔，并且通过使用含有HF的气体的干法来蚀刻第一氧化物膜，从而使孔的一部分与 接触部分的上侧和第一氧化膜内部。

公开(公告)号：US08991333B2

公开(公告)日：2015-03-31

申请号：US13292518

申请日：2011-11-09

申请人： Shigeki Tozawa

发明人： Shigeki Tozawa

IPC分类号： C23C16/30 ,  C23C16/56 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02 ,  H01L21/67 ,  H01L21/768

CPC分类号： H01L21/02063 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76897

摘要： A substrate processing method includes a first step of subjecting a target substrate to a gas process within an atmosphere containing a fluorine-containing process gas, thereby forming a fluorine-containing reaction product on a surface of the target substrate. The method further includes a second step of subjecting the target substrate treated by the gas process to a heating process and a gas process within an atmosphere containing a reactive gas that reacts with fluorine.

公开(公告)号：US08956546B2

公开(公告)日：2015-02-17

申请号：US13813663

申请日：2011-08-02

申请人： Hajime Ugajin ,  Shigeki Tozawa

发明人： Hajime Ugajin ,  Shigeki Tozawa

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/311 ,  H01L21/67 ,  H01L21/677 ,  H01L21/762 ,  H01L27/115 ,  H01L29/66

CPC分类号： H01L21/302 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/76224 ,  H01L21/76283 ,  H01L27/11521 ,  H01L29/66825 ,  H01L29/66833

摘要： A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.

摘要翻译： 用于在容纳在处理室中的基板的表面上除去Si基膜的基板处理方法包括第一步骤，其中基板表面上的Si基膜通过含有 卤素元素和碱性气体，第二步骤，其中反应产物在处理室中蒸发，该处理室被减压到比第一步骤期间的压力低的压力。 第一步和第二步重复两次或更多次。

公开(公告)号：US5423936A

公开(公告)日：1995-06-13

申请号：US138039

申请日：1993-10-19

申请人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

发明人： Kazushi Tomita ,  Yoshikazu Ito ,  Motohiro Hirano ,  Akira Nozawa ,  Hiromitsu Matsuo ,  Shunichi Iimuro ,  Shigeki Tozawa ,  Yutaka Miura

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32724 ,  H01J2237/3347

摘要： The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

摘要翻译： 本发明提供了一种等离子体蚀刻系统，其包括封装等离子体的处理室，用于抽出处理室的装置，用于支撑基板的卡盘电极，与所述卡盘电极相对设置并设有大量小孔的喷淋电极 用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源，与所述淋浴电极的所述小孔连通的气体供给装置，用于通过所述小孔将等离子体形成气体供给到所述处理室，以及用于控制 所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。

公开(公告)号：US20130130499A1

公开(公告)日：2013-05-23

申请号：US13813663

申请日：2011-08-02

申请人： Hajime Ugajin ,  Shigeki Tozawa

发明人： Hajime Ugajin ,  Shigeki Tozawa

IPC分类号： H01L21/302

CPC分类号： H01L21/302 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/76224 ,  H01L21/76283 ,  H01L27/11521 ,  H01L29/66825 ,  H01L29/66833

摘要： A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.

摘要翻译： 用于在容纳在处理室中的基板的表面上除去Si基膜的基板处理方法包括第一步骤，其中基板表面上的Si基膜通过含有 卤素元素和碱性气体，第二步骤，其中反应产物在处理室中蒸发，该处理室被减压到比第一步骤期间的压力低的压力。 第一步和第二步重复两次或更多次。