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公开(公告)号：US09419155B2
公开(公告)日：2016-08-16
申请号：US13343922
申请日：2012-01-05
申请人： Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/101 , H01L31/18
CPC分类号： H01L31/0232 , H01L31/02327 , H01L31/101 , H01L31/18
摘要： This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 μm.
摘要翻译： 该描述涉及使用具有多个外延层的基板形成的感测产品。 至少第一外延层具有与第二外延层的组成不同的组成。 感测产品可选地包括第二外延层中的至少一个辐射感测元件以及可选地在第二外延层上的互连结构。 通过去除衬底和除第二外延层之外的所有外延层形成传感产物。 第二外延层的光入射表面具有小于约0.15μm的总厚度变化。
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公开(公告)号：US20130126950A1
公开(公告)日：2013-05-23
申请号：US13304235
申请日：2011-11-23
申请人： Jun-Nan Nian , Li-Yen Fang , Yu-Ting Lin , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Jun-Nan Nian , Li-Yen Fang , Yu-Ting Lin , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L29/772 , H01L21/28
CPC分类号： H01L23/53209 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A system and method for forming a semiconductor device is provided. An embodiment comprises forming a silicide region on a substrate along with a transition region between the silicide region and the substrate. The thickness of the silicide precursor material layer along with the annealing conditions are controlled such that there is a larger ratio of one atomic species within the transition region than another atomic species, thereby increasing the hole mobility within the transition region.
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公开(公告)号：US08435893B1
公开(公告)日：2013-05-07
申请号：US13304235
申请日：2011-11-23
申请人： Jun-Nan Nian , Li-Yen Fang , Yu-Ting Lin , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Jun-Nan Nian , Li-Yen Fang , Yu-Ting Lin , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L21/44
CPC分类号： H01L23/53209 , H01L21/28518 , H01L29/665 , H01L29/6659 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A system and method for forming a semiconductor device is provided. An embodiment comprises forming a silicide region on a substrate along with a transition region between the silicide region and the substrate. The thickness of the silicide precursor material layer along with the annealing conditions are controlled such that there is a larger ratio of one atomic species within the transition region than another atomic species, thereby increasing the hole mobility within the transition region.
摘要翻译： 提供一种用于形成半导体器件的系统和方法。 一个实施例包括在硅化物区域和衬底之间的过渡区域上形成衬底上的硅化物区域。 控制硅化物前体材料层的厚度以及退火条件，使得在过渡区域内的一种原子种类的比例比另一种原子种类更大，从而增加过渡区域内的空穴迁移率。
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公开(公告)号：US20070252277A1
公开(公告)日：2007-11-01
申请号：US11380666
申请日：2006-04-28
申请人： Jung-Chih Tsao , Kei-Wei Chen , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
发明人： Jung-Chih Tsao , Kei-Wei Chen , Shih-Chieh Chang , Yu-Ku Lin , Ying-Lang Wang
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/485 , H01L21/76844 , H01L21/76865 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device. The semiconductor device includes a substrate, a dielectric layer formed thereon, an opening formed in the dielectric layer, a first barrier layer overlying the sidewall of the opening, a second barrier layer overlying the first barrier layer and the bottom of the opening, and a conductive layer filled into the opening. The invention also provides a method of fabricating the semiconductor device.
摘要翻译： 半导体器件。 所述半导体器件包括：衬底，形成在其上的电介质层，形成在所述电介质层中的开口;覆盖所述开口侧壁的第一阻挡层，覆盖所述第一阻挡层和所述开口底部的第二势垒层;以及 导电层填充入开口。 本发明还提供一种制造半导体器件的方法。
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公开(公告)号：US09847478B2
公开(公告)日：2017-12-19
申请号：US13416183
申请日：2012-03-09
申请人： Ting-Chang Chang , Yong-En Syu , Fu-Yen Jian , Shih-Chieh Chang , Ying-Lang Wang
发明人： Ting-Chang Chang , Yong-En Syu , Fu-Yen Jian , Shih-Chieh Chang , Ying-Lang Wang
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/12 , H01L45/145 , H01L45/1608
摘要： Methods and apparatuses for a resistive random access memory (RRAM) device are disclosed. The RRAM device comprises a bottom electrode, a resistive switching layer disposed on the bottom electrode, and a top electrode disposed on the resistive switching layer. The resistive switching layer is made of a composite of a metal, Si, and O. There may be an additional tunnel barrier layer between the top electrode and the bottom electrode. The top electrode and the bottom electrode may comprise multiple sub-layers.
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公开(公告)号：US08247322B2
公开(公告)日：2012-08-21
申请号：US11680981
申请日：2007-03-01
IPC分类号： H01L21/44
CPC分类号： H01L21/76831 , H01L21/7684
摘要： A method for forming a semiconductor structure includes forming a dielectric layer over a substrate. A first non-conductive barrier layer is formed over the dielectric layer. At least one opening is formed through the first non-conductive barrier layer and within the dielectric layer. A second non-conductive barrier layer is formed over the first non-conductive barrier layer and within the opening. At least a portion of the second non-conductive barrier layer is removed, thereby at least partially exposing a top surface of the first non-conductive barrier layer and a bottom surface of the opening, with the second non-conductive barrier layer remaining on sidewalls of the opening. A seed layer and conductive layer is then formed and a single polishing operation removes the seed layer and conductive layer.
摘要翻译： 形成半导体结构的方法包括在衬底上形成电介质层。 在电介质层上形成第一非导电阻挡层。 通过第一非导电阻挡层和介电层内形成至少一个开口。 在第一非导电阻挡层上并在开口内形成第二非导电阻挡层。 去除第二非导电阻挡层的至少一部分，从而至少部分地暴露第一非导电阻挡层的顶表面和开口的底表面，而第二非导电阻挡层保留在侧壁上 的开幕。 然后形成种子层和导电层，并且单次抛光操作去除种子层和导电层。
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公开(公告)号：US07803257B2
公开(公告)日：2010-09-28
申请号：US10971836
申请日：2004-10-22
申请人： Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen , Shih-Ho Lin , Chun-Chang Chen
发明人： Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen , Shih-Ho Lin , Chun-Chang Chen
CPC分类号： H01L21/2885 , C25D17/001 , C25D17/12 , Y10T29/49208 , Y10T29/53204
摘要： A current-leveling electrode for improving electroplating and electrochemical polishing uniformity in the electrochemical plating or electropolishing of metals on a substrate is disclosed. The current-leveling electrode includes a base electrode and at least one sub-electrode carried by the base electrode. The at least one sub-electrode has a width which is less than a width of the base electrode to impart a generally tapered, stepped or convex configuration to the current-leveling electrode.
摘要翻译： 公开了一种用于改善电化学电镀中的电镀和电化学抛光均匀性的电流调节电极或对基底上的金属的电解抛光。 电流调平电极包括基极和由基极承载的至少一个子电极。 所述至少一个子电极的宽度小于所述基极的宽度，以赋予所述电流调平电极大致锥形，阶梯形或凸形的构造。
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公开(公告)号：US08551193B2
公开(公告)日：2013-10-08
申请号：US13188182
申请日：2011-07-21
申请人： Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen
发明人： Shih-Chieh Chang , Ying-Lang Wang , Kei-Wei Chen
IPC分类号： C22C19/03 , H01L21/283
CPC分类号： H01L29/45 , C23C14/14 , C23C14/3414 , H01L21/28052 , H01L21/28518 , H01L21/2855 , H01L21/823418 , H01L29/456 , H01L29/665 , Y10T29/41
摘要： A target includes nickel and a secondary metal. The secondary metal has a volume percentage between about 1 percent and about 10 percent. The secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3.
摘要翻译： 目标包括镍和二次金属。 次级金属的体积百分比在约1％至约10％之间。 二次金属具有约5,000kg / m 3至约15,000kg / m 3的密度。
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9.发明申请Metal Shielding Layer in Backside Illumination Image Sensor Chips and Methods for Forming the Same 有权金属屏蔽层背面照明图像传感器芯片及其形成方法公开(公告)号：US20130134541A1
公开(公告)日：2013-05-30
申请号：US13420279
申请日：2012-03-14
申请人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
发明人： Shih-Chieh Chang , Jian-Shin Tsai , Chih-Chang Huang , Ing-Ju Lee , Ching-Yao Sun , Jyun-Ru Wu , Ching-Che Huang , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/14643 , H01L27/14683 , H01L27/14685
摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
摘要翻译： 一种器件包括具有正面和背面的半导体衬底。 光敏器件设置在半导体衬底的表面处，其中光敏器件被配置为从半导体衬底的背面接收光信号，并将光信号转换为电信号。 在半导体衬底的背面设有非晶态粘接层。 非晶态粘合层包括氮和金属的化合物。 金属屏蔽层设置在半导体衬底的背面并与非晶态粘合层接触。
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10.发明申请公开(公告)号：US20080211106A1
公开(公告)日：2008-09-04
申请号：US11680981
申请日：2007-03-01
IPC分类号： H01L21/4763
CPC分类号： H01L21/76831 , H01L21/7684
摘要： A method for forming a semiconductor structure includes forming a dielectric layer over a substrate. A first non-conductive barrier layer is formed over the dielectric layer. At least one opening is formed through the first non-conductive barrier layer and within the dielectric layer. A second non-conductive barrier layer is formed over the first non-conductive barrier layer and within the opening. At least a portion of the second non-conductive barrier layer is removed, thereby at least partially exposing a top surface of the first non-conductive barrier layer and a bottom surface of the opening, with the second non-conductive barrier layer remaining on sidewalls of the opening. A seed layer and conductive layer is then formed and a single polishing operation removes the seed layer and conductive layer.
摘要翻译： 形成半导体结构的方法包括在衬底上形成电介质层。 在电介质层上形成第一非导电阻挡层。 通过第一非导电阻挡层和介电层内形成至少一个开口。 在第一非导电阻挡层上并在开口内形成第二非导电阻挡层。 去除第二非导电阻挡层的至少一部分，从而至少部分地暴露第一非导电阻挡层的顶表面和开口的底表面，而第二非导电阻挡层保留在侧壁上 的开幕。 然后形成种子层和导电层，并且单次抛光操作去除种子层和导电层。
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