摘要:
A radiation-sensitive resin composition comprising (A) an alkali-soluble resin having an unsaturated group, (B) a compound having at least one ethylenically unsaturated double bond, and (C) a radiation-induced radical polymerization initiator, wherein: the alkali-soluble resin having an unsaturated group (A) is obtained by reacting: 100 parts by weight of a copolymer comprising 1 to 40 wt % structural units derived from (a) a radically polymerizable compound having a carboxyl group; 1 to 50 wt % structural units having a phenolic hydroxyl group which are derived from (b-1) a radically polymerizable compound having a phenolic hydroxyl group or (b-2) a radically polymerizable compound having a functional group convertible into a phenolic hydroxyl group after the copolymerization, other structural units of said copolymer being derived from (c) another radically polymerizable compound; with 0.1 to 20 parts by weight of (d) a radically polymerizable compound having an epoxy group. The resin composition can form a radiation-sensitive film in a thickness greater than a deposit thickness and has a high resolution.
摘要:
There is provided a test apparatus for testing a device under test, including a signal supply section that supplies a test signal to the device under test via a transmission line, and a comparing and judging section that receives a response signal from the device under test via the transmission line shared with the signal supply section, and judges whether the device under test is acceptable by referring to a comparison result obtained by comparing a signal level of the response signal with a reference level corresponding to a logic pattern of the test signal.
摘要:
A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
摘要:
A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
摘要:
A driver circuit having a temperature correction circuit for producing an output signal with high precision amplitude and timing by correcting the temperature changes in the amplitude and timing. The temperature correction circuit includes a temperature detector for detecting the temperature change in output elements, a timing adjustment circuit for correcting the timing of an output signal relative to an input signal upon receiving the temperature detection signal from the temperature detector, and a bias circuit for correcting the output amplitude and impedance of the output signal.
摘要:
A driver circuit having a temperature correction circuit for providing a relatively stable output amplitude and timing by detecting electric consumption of an output stage of the driver circuit and correcting the changes in the amplitude and timing of an output signal therefrom. The temperature correction circuit includes a temperature detection part for detecting temperature change in a pair of output elements, an output timing temperature correction part for correcting the output timing of the output signal relative to an input signal upon receiving the temperature detection signal from the temperature detection part, and an output amplitude and impedance temperature correction part for correcting output amplitudes and output impedance of the output signal.
摘要:
There is provided a test apparatus for testing a device under test, including a plurality of test modules that test the device under test, and a synchronization module that is connected to each of the plurality of test modules, where the synchronization module synchronizes together the plurality of test modules. Here, based on a synchronization signal received from a digital module, the synchronization module synchronizes an analog module to the digital module, and the digital module is one of the plurality of test modules that exchanges a digital signal with the device under test, and the analog module is one of the plurality of test modules that performs an analog test on the device under test.
摘要:
A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
摘要:
A test apparatus being capable of replacing a test module with the other kind of test module that tests device under tests by using the test module is provided. The test apparatus includes a plurality of test modules that transmit/receive signals to/from the device under tests to test the device under test; and a performance board for diagnosis that diagnose the plurality of test modules. The performance board for diagnosis including: a motherboard provided common to the plurality of test, modules; a circuit for diagnosis that transmits/receives a signal to/from each test module to diagnose the test module; a plurality of inter-board to module connectors that connect between the corresponding test module and the circuit for diagnosis; and plurality of sub-boards each of which has at least one of the inter-board to module connectors and is fixed to the motherboard to fix the inter-board to module connectors to the motherboard.
摘要:
A test apparatus that tests a device under test is provided. The test apparatus includes a test module that provides a test signal to the device under test. The test apparatus includes: a test module that provides a test signal to the device under test; a measuring instrument that measures a reference parameter including at least one of a reference voltage, a reference resistance and a reference current included in the test module; and a control device that controls the test module and the measuring instrument. By executing a diagnostic program that diagnose the plurality of test modules by using the measuring instruments, the control device to function as: a target diagnostic section that diagnoses a target test module; an acquirement section that acquires measuring instrument identification information indicative of the kind of the measuring instrument provided in the test apparatus; a measurement processing section provided for each kind of the measuring instruments and executed on the control device that issues a command to cause the measuring instrument to measure the value of the reference parameter of the test module to the measuring instrument and receives a measurement result of the reference parameter from the measuring instrument; and a switching section that calls the measurement processing section corresponding to the measuring instrument identified by the measuring instrument identification information in response to receiving the call to instruct to measure the value of a reference parameter included in the test module, executes the same and returns the measurement result of the reference parameter to the target diagnostic section.