公开(公告)号：US07018932B2

公开(公告)日：2006-03-28

申请号：US10377597

申请日：2003-03-04

申请人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

发明人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Katsuya Okumura ,  Kenji Kawano ,  Soichi Inoue

IPC分类号： H01L21/027 ,  G03F9/00

CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F7/70675 ,  H01J2237/30438

摘要： A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在将基板上形成有感光膜的基板上形成感光膜的制造方法，设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置 形成掩模装置图案，选择性地将感光膜曝光以将掩模检查标记转印到感光膜上，以在感光膜上形成检查标记的潜像， 至少加热其中形成有检查标记的潜像的感光膜的面积，测量检查标记，改变用于选择性曝光的曝光装置的设定值，基于 所述测量使得曝光条件符合设定值，基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜，加热感光膜的整个表面，并显影感光膜。

公开(公告)号：US07952071B2

公开(公告)日：2011-05-31

申请号：US12162071

申请日：2007-01-24

申请人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Masahiro Hatakeyama ,  Kenji Terao ,  Takeshi Murakami ,  Katsuya Okumura ,  Tatsuhiko Higashiki

发明人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Masahiro Hatakeyama ,  Kenji Terao ,  Takeshi Murakami ,  Katsuya Okumura ,  Tatsuhiko Higashiki

IPC分类号： G01N23/00

CPC分类号： H01J37/29 ,  H01J37/045 ,  H01J2237/2446

摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

摘要翻译： 提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。 提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域 尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

公开(公告)号：US20090026368A1

公开(公告)日：2009-01-29

申请号：US12162071

申请日：2007-01-24

申请人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Masahiro Hatakeyama ,  Kenji Terao ,  Takeshi Murakami ,  Katsuya Okumura ,  Tatsuhiko Higashiki

发明人： Nobuharu Noji ,  Yoshihiko Naito ,  Hirosi Sobukawa ,  Masahiro Hatakeyama ,  Kenji Terao ,  Takeshi Murakami ,  Katsuya Okumura ,  Tatsuhiko Higashiki

IPC分类号： G01N23/00

CPC分类号： H01J37/29 ,  H01J37/045 ,  H01J2237/2446

摘要： Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device.Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

摘要翻译： 提供了在半导体器件的制造工艺中使用的缺陷检查装置中，现有技术不能提供高精度的缺陷检查装置和检查（或评价）方法。 提供一种用投影型电子束检查装置检查样品表面的方法，包括以下步骤：通过由具有大致圆形或椭圆形的电子枪21产生的电子束在样品表面上形成这样的照射区域 尺寸大于样品表面上的图案; 将电子束基本上照射到样品表面上的图案的中心; 以及响应于用于检查样品表面的电子束的照射，从从样品表面发射的二次电子在检测器的电子检测平面上形成图像。

公开(公告)号：US20060001846A1

公开(公告)日：2006-01-05

申请号：US11170165

申请日：2005-06-30

申请人： Takuya Kono ,  Tatsuhiko Higashiki ,  Takashi Sato ,  Shoji Mimotogi ,  Soichi Inoue

发明人： Takuya Kono ,  Tatsuhiko Higashiki ,  Takashi Sato ,  Shoji Mimotogi ,  Soichi Inoue

IPC分类号： G03B27/00

CPC分类号： G03F7/70625

摘要： An exposure system includes a simulator speculating first and second calculated doses to project first and second reference marks onto first and second resist films, respectively, an exposure tool projecting the first reference mark onto the first resist film at test doses to form test resist patterns, a choose module choosing an optimum pattern among the test resist patterns and choosing a first optimum dose used for the optimum pattern, and a dose calculator calculating a second optimum dose for the second reference mark by correcting the first optimum dose based on the first and the second calculated doses.

摘要翻译： 曝光系统包括模拟器，分别将第一和第二参考标记分别投影到第一和第二抗蚀剂膜上的第一和第二计算剂量，曝光工具以测试剂量将第一参考标记投影到第一抗蚀剂膜上以形成测试抗蚀图案， 选择模块，在测试抗蚀剂图案中选择最佳图案，并选择用于最佳图案的第一最佳剂量;以及剂量计算器，通过基于第一和第二图像校正第一最佳剂量来计算第二参考标记的第二最佳剂量 秒计算剂量。

公开(公告)号：US07139998B2

公开(公告)日：2006-11-21

申请号：US10673427

申请日：2003-09-30

申请人： Kazuya Fukuhara ,  Tatsuhiko Higashiki ,  Soichi Inoue

发明人： Kazuya Fukuhara ,  Tatsuhiko Higashiki ,  Soichi Inoue

IPC分类号： G06F17/50

CPC分类号： G03F1/70

摘要： A photomask designing method used in a lithography process, the lithography process comprises illuminating light on a photomask and converging the light which has passed through the photomask on a photosensitive substrate via a projection optical system, the photomask designing method comprises acquiring a transmittance characteristic of the projection optical system, the characteristic varing depending on a difference in optical paths of light in the projection optical system, the light passing through the projection optical system, and acquiring mask bias of the photomask by use of the transmittance characteristic of the projection optical system.

摘要翻译： 在光刻工艺中使用的光掩模设计方法中，光刻工艺包括在光掩模上照亮光，并通过投影光学系统将已经通过光掩模的光会聚在感光基板上，光掩模设计方法包括获得 投影光学系统，根据投影光学系统中的光的光路差异，穿过投影光学系统的光以及通过投影光学系统的透射特性来获取光掩模的掩模偏置的特征变化。

公开(公告)号：US06730447B2

公开(公告)日：2004-05-04

申请号：US10092486

申请日：2002-03-08

申请人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Hiroshi Ikegami ,  Nobuo Hayasaka

发明人： Shinichi Ito ,  Tatsuhiko Higashiki ,  Hiroshi Ikegami ,  Nobuo Hayasaka

IPC分类号： G03C500

CPC分类号： G03F7/70633 ,  B23K26/04 ,  B23K26/042 ,  B23K2101/40 ,  G03F9/7076 ,  Y10S430/146 ,  Y10T29/413

摘要： A laser processing apparatus comprises a laser oscillator for producing a laser beam to selectively remove part of a substrate to be processed, a scanning system for applying the laser beam to an arbitrary position of the substrate and incident means for applying the laser beam to the substrate substantially at right angle.

摘要翻译： 激光加工装置包括：激光振荡器，用于产生激光束以选择性地去除待处理的基板的一部分，用于将激光束施加到基板的任意位置的扫描系统和用于将激光束施加到基板的入射装置 基本上是直角。

公开(公告)号：US20110229826A1

公开(公告)日：2011-09-22

申请号：US13118779

申请日：2011-05-31

申请人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US07968272B2

公开(公告)日：2011-06-28

申请号：US11600198

申请日：2006-11-16

申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03C5/04

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US20070128554A1

公开(公告)日：2007-06-07

申请号：US11600198

申请日：2006-11-16

申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US08609014B2

公开(公告)日：2013-12-17

申请号：US13150961

申请日：2011-06-01

申请人： Tsukasa Azuma ,  Tatsuhiko Higashiki ,  Kyoichi Suguro

发明人： Tsukasa Azuma ,  Tatsuhiko Higashiki ,  Kyoichi Suguro

IPC分类号： B29C67/20

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template.

摘要翻译： 根据一个实施例，模板制造方法是用于制造在压印处理中使用的模板的方法，其中在主表面上形成具有凹凸的图案，并且图案与形成在基板上的抗蚀剂部件接触 要被处理以将图案转印到抗蚀剂构件上，该方法包括将带电粒子至少注入到模板的凹部的底部中。