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公开(公告)号：US09245776B2
公开(公告)日：2016-01-26
申请号：US12979875
申请日：2010-12-28
申请人： Shinji Himori , Daisuke Hayashi , Akitaka Shimizu
发明人： Shinji Himori , Daisuke Hayashi , Akitaka Shimizu
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/32541 , H01J37/3255 , H01J37/32577 , H01J37/32605
摘要： A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body.
摘要翻译： 等离子体处理装置包括：处理室，其中处理目标基板; 在处理室中设置成面对的施加电极和对置电极，在施加电极和对置电极之间形成等离子体产生空间; 以及连接到施加电极的RF电源，RF电力从RF电源提供给施加电极。 施加电极和对置电极中的至少一个包括由金属形成的基底和插入到基底中的电介质体，一个或多个金属板电极被埋在电介质体内。
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公开(公告)号：US09202675B2
公开(公告)日：2015-12-01
申请号：US12718627
申请日：2010-03-05
申请人： Shinji Himori , Daisuke Hayashi
发明人： Shinji Himori , Daisuke Hayashi
CPC分类号： H01J37/3255 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32183 , H01J37/32577
摘要： A plasma processing apparatus includes a processing chamber in which a target object is processed by a plasma, a first and a second electrode that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and the second electrode to supply a high frequency power to the processing chamber. And at least one of the first and the second electrode includes a base formed of a plate-shaped dielectric material and a resistor formed of a metal and provided between the base and the plasma.
摘要翻译： 等离子体处理装置包括处理室，其中目标物体由等离子体处理，第一和第二电极设置在处理室中以彼此面对并具有其间的处理空间;以及高频电源， 连接到第一和第二电极中的至少一个，以向处理室提供高频电力。 并且第一和第二电极中的至少一个包括由板状电介质材料形成的基底和由金属形成并设置在基底和等离子体之间的电阻器。
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3.发明授权Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod 有权等离子体处理装置，电极单元，馈线构件和射频馈线棒公开(公告)号：US07230202B2
公开(公告)日：2007-06-12
申请号：US10927587
申请日：2004-08-27
IPC分类号： B23K9/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532
摘要： Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.
摘要翻译： 这里公开了一种等离子体处理装置，其将处理气体引入到气密处理容器中，该气密处理容器施加射频功率以产生等离子体，并且将等离子体处理传送到布置在处理容器中的被处理物体。 等离子体处理装置包括：布置在处理容器中的电极单元，具有用于施加射频电力的电极的电极单元和布置在电极单元中的空间部分，每个电极单元绝缘电极和处理容器的空间部分 其他。 空间部分与处理容器外部的大气连通。
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公开(公告)号：US07622017B2
公开(公告)日：2009-11-24
申请号：US10856797
申请日：2004-06-01
IPC分类号： C23C16/509 , C23C16/52 , C23F1/00 , H01L21/306
CPC分类号： H01L21/6831 , H01J2237/2001 , H01L21/67069
摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.
摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。
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公开(公告)号：US20050011456A1
公开(公告)日：2005-01-20
申请号：US10856797
申请日：2004-06-01
IPC分类号： C23C16/00 , H01L21/00 , H01L21/3065 , H01L21/683
CPC分类号： H01L21/6831 , H01J2237/2001 , H01L21/67069
摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.
摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。
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6.发明申请公开(公告)号：US20070284085A1
公开(公告)日：2007-12-13
申请号：US11797626
申请日：2007-05-04
IPC分类号： F28F7/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532
摘要： Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.
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7.发明申请Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod 有权等离子体处理装置，电极单元，馈线构件和射频馈线棒公开(公告)号：US20050023254A1
公开(公告)日：2005-02-03
申请号：US10927587
申请日：2004-08-27
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532
摘要： The present invention relates to a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus of the present invention includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion is communicated with an atmospheric air outside the processing container.
摘要翻译： 等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其将处理气体引入到气密处理容器中，该处理容器应用射频功率以产生等离子体，并且将等离子体处理传送到处理容器中布置的被处理物体。 本发明的等离子体处理装置包括：布置在处理容器中的电极单元，具有用于施加射频功率的电极的电极单元和布置在电极单元中的空间部分，绝缘电极和 处理容器彼此。 空间部分与处理容器外部的大气连通。
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公开(公告)号：US08568606B2
公开(公告)日：2013-10-29
申请号：US12750015
申请日：2010-03-30
申请人： Takeshi Ohse , Shinji Himori , Jun Abe , Norikazu Yamada
发明人： Takeshi Ohse , Shinji Himori , Jun Abe , Norikazu Yamada
IPC分类号： C03C15/00
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.
摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。
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公开(公告)号：US08284538B2
公开(公告)日：2012-10-09
申请号：US11835743
申请日：2007-08-08
申请人： Shinji Himori , Shoichiro Matsuyama , Atsushi Matsuura , Hiroshi Inazumachi , Mamoru Kosakai , Yukio Miura , Keigo Maki
发明人： Shinji Himori , Shoichiro Matsuyama , Atsushi Matsuura , Hiroshi Inazumachi , Mamoru Kosakai , Yukio Miura , Keigo Maki
IPC分类号： H01L21/687
CPC分类号： H01L21/6833
摘要： An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.
摘要翻译： 静电吸盘装置包括静电吸盘部，金属基部和电介质板。 静电吸盘部具有基板，其主面作为板状试样的安装面，内置于基板的静电吸附内部电极，以及向静电吸引部施加直流电压的电源端子， 吸附内电极。 这里，电介质板被固定到形成在金属基部中的凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部之间以导电性粘合剂层粘合地结合，其体积电阻率为1.0×10-2＆OHgr·cm以下。
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公开(公告)号：US08178444B2
公开(公告)日：2012-05-15
申请号：US12363992
申请日：2009-02-02
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/67109 , H01J37/32009 , H01J37/3255 , H01J37/32724 , H01L21/67248 , H01L21/6831
摘要： A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.
摘要翻译： 能够消除等离子体分布不均匀的基板处理方法。 该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板 为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。 在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。
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