摘要:
A chamber apparatus for operating with a laser apparatus includes a chamber, a target supply unit, a collection unit and a collection container. The chamber includes an inlet through which a laser beam from the laser apparatus enters the chamber. The target supply unit is configured to supply a target material to a predetermined region inside the chamber. The collection unit includes a debris entering surface so that debris generated when the target material is irradiated with the laser beam enters the debris entering surface. The debris entering surface is inclined with respect to a direction in which the debris enters the debris entering surface. The collection container collects the debris flowing out of the collection unit.
摘要:
This disclosure is directed to widen an adjustable range of the spectral linewidth of laser light output from a laser apparatus. This laser apparatus may include: (1) an excitation source configured to excite a laser medium in a laser gain space, (2) an optical resonator including an output coupler arranged on one side of an optical path through the laser gain space and a wavelength dispersion element arranged on the other side of the optical path through the laser gain space, and (3) a switching mechanism configured to switch a beam-width magnification or reduction factor by placing or removing at least one beam-width change optical system for expanding or reducing a beam width in or from an optical path between the laser gain space and the wavelength dispersion element or by inverting orientation of the at least one beam-width change optical system in the optical path.
摘要:
At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.
摘要:
A gas discharge chamber that uses a calcium fluoride crystal which reduces a breakage due to mechanical stress (window holder and laser gas pressure), thermal stress from light absorption, and the like, increases the degree of linear polarization of output laser, and suppresses degradation due to strong ultraviolet (ArF, in particular) laser light irradiation. A first window (2) and a second window (3) of the gas discharge chamber have an incident plane and an emitting plane in parallel with a (111) crystal plane of their calcium fluoride crystal. With respect to an arrangement where laser light entering the calcium fluoride crystal passes through a plane including a axis and a axis of each of the first window (2) and the second window (3) as seen from inside the chamber (1), the first window (2) and the second window (3) are arranged in positions rotated in the same direction by the same angle about their axis.
摘要:
A holder device for holding an optical element includes a holder having first and second members to sandwich the optical element therebetween, and a sealing member for creating a seal between the second member and the optical element.
摘要:
An extreme ultraviolet light generation apparatus used in combination with a laser system, the apparatus may include: a chamber provided with at least one inlet port for introducing a laser beam outputted from the laser system into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber, where the target material is irradiated with the laser beam; at least one optical element disposed inside the chamber; a magnetic field generation unit for generating a magnetic field around the predetermined region; an ion collection unit disposed in a direction of a line of magnetic force of the magnetic field for collection an ion which is generated when the target material is irradiated with the laser beam and is flowing along the line of magnetic force; and a gas introduction unit for introducing an etching gas into the chamber.
摘要:
An apparatus for generating extreme ultraviolet light (EUV) includes a chamber, a target supply unit, a collector mirror, an exhaust device, a gas supply device and an ultraviolet light source. The target supply unit supplies a target material to a predetermined region inside the chamber. The collector mirror collects EUV light generated from the target material. The exhaust device is connected to the chamber. The gas supply device is connected to the chamber to supply an etchant gas into the chamber. The ultraviolet light source irradiates a reflective surface of the collector mirror with ultraviolet light.
摘要:
A chamber apparatus used with a laser apparatus and a focusing optical system for focusing a laser beam outputted from the laser apparatus may include: a chamber provided with an inlet through which the laser beam is introduced into the chamber; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; and a collection unit provided in the chamber for collecting a charged particle generated when the target material is irradiated with the laser beam in the chamber.
摘要:
A laser apparatus according to embodiment may include: a laser chamber filled with a laser gain medium; a pair of electrodes disposed in the laser chamber; a charger configured to apply a charge voltage for causing a discharge to occur between the pair of the electrodes; a pulse power module configured to covert the charge voltage applied by the charger into a short pulsed voltage, and apply the short pulsed voltage between the pair of the electrodes; and a controller configured to calculate input energies Ein applied to the pair of the electrodes based on the charge voltage, calculate an integration value Einsum of the input energies Ein by integrating the calculated input energies Ein, and determine whether the integration value Einsum exceeds an integration lifetime value Einsumlife of input energy or not.
摘要:
The invention relates to a two-stage laser system well fit for semiconductor aligners, which is reduced in terms of spatial coherence while taking advantage of the high stability, high output efficiency and fine line width of the MOPO mode. The two-stage laser system for aligners comprises an oscillation-stage laser (50) and an amplification-stage laser (60). Oscillation laser light having divergence is used as the oscillation-stage laser (50), and the amplification-stage laser (60) comprises a Fabry-Perot etalon resonator made up of an input side mirror (1) and an output side mirror (2). The resonator is configured as a stable resonator.