公开(公告)号：US20150179615A1

公开(公告)日：2015-06-25

申请号：US14557644

申请日：2014-12-02

申请人： Shinji WATANABE ,  Tsuyoshi KIDA ,  Yoshihiro ONO ,  Kentaro MORI ,  Kenji SAKATA ,  Yusuke YAMADA

发明人： Shinji WATANABE ,  Tsuyoshi KIDA ,  Yoshihiro ONO ,  Kentaro MORI ,  Kenji SAKATA ,  Yusuke YAMADA

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L21/78 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/78 ,  H01L23/3135 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2224/13017 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/1601 ,  H01L2224/16058 ,  H01L2224/1607 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16238 ,  H01L2224/165 ,  H01L2224/16505 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75252 ,  H01L2224/81075 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/8183 ,  H01L2224/81986 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/2064 ,  H01L2924/00012 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/013

摘要： To improve reliability of a semiconductor device. In a conductive material that electrically couples a Cu pillar electrode and a lead, an alloy part comprised of an alloy of tin and copper is formed inside this conductive material. At this time, the alloy part contacts both the Cu pillar electrode and the lead, and the Cu pillar electrode and the lead are bound through the alloy part. Similarly, also in FIG. 8, it is found that the Cu pillar electrode and the lead are electrically coupled to each other by the alloy part. Thereby, it is possible to improve electric coupling reliability between the Cu pillar electrode and the lead.

摘要翻译： 提高半导体器件的可靠性。 在电耦合Cu柱电极和引线的导电材料中，在该导电材料内形成由锡和铜合金组成的合金部分。 此时，合金部分接触Cu柱电极和引线，Cu柱电极和引线通过合金部分结合。 类似地，也在图1中。 如图8所示，发现Cu柱电极和引线通过合金部件彼此电耦合。 由此，能够提高Cu柱电极与引线之间的电耦合可靠性。

公开(公告)号：US20110084384A1

公开(公告)日：2011-04-14

申请号：US12904680

申请日：2010-10-14

申请人： Kenji SAKATA ,  Tsuyoshi KIDA

发明人： Kenji SAKATA ,  Tsuyoshi KIDA

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L21/563 ,  H01L23/3135 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/49173 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75743 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83102 ,  H01L2224/83104 ,  H01L2224/83192 ,  H01L2224/83951 ,  H01L2224/92125 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： A semiconductor device includes a substrate, a semiconductor chip that is bonded to one of the faces of the substrate via bumps, and has a device formation face facing the one of the faces, and a resin that fills the space between the device formation face of the semiconductor chip and the one of the faces of the substrate. The resin includes: a first resin that is formed in a formation region of bumps placed on the outermost circumference of the bumps, and is formed inside the formation region, and a second resin that is formed outside the first resin. The thermal expansion coefficient of the substrate is higher than the thermal expansion coefficient of the first resin. The thermal expansion coefficient of the second resin is higher than the thermal expansion coefficient of the first resin.

摘要翻译： 半导体器件包括：衬底，通过凸块接合到衬底的一个面的半导体芯片，并且具有面向该一个面的器件形成面;以及树脂，其填充器件形成面之间的空间 半导体芯片和基板的一个面。 树脂包括：第一树脂，其形成在凸起的最外周上的凸起的形成区域中，并且形成在形成区域内部;以及第二树脂，形成在第一树脂的外部。 基板的热膨胀系数高于第一树脂的热膨胀系数。 第二树脂的热膨胀系数高于第一树脂的热膨胀系数。

公开(公告)号：US20080113494A1

公开(公告)日：2008-05-15

申请号：US11968718

申请日：2008-01-03

申请人： Tsuyoshi KIDA

发明人： Tsuyoshi KIDA

IPC分类号： H01L21/00

CPC分类号： B23K26/032 ,  B23K26/042 ,  B23K26/0853 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50

摘要： In a laser beam processing apparatus that processes a semiconductor wafer having a multi-layered wiring structure formed thereon, scribe lines defined thereon, and at least one alignment mark formed on any one of the scribe lines, a laser beam generator system generates a laser beam, and a movement system relatively moves the semiconductor wafer with respect to the laser beam such that the semiconductor wafer is irradiated with a laser beam along the scribe lines to partially remove the multi-layered wiring structure from the semiconductor wafer along the scribe lines. An irradiation control system controls the irradiation of the semiconductor wafer with the laser beam along the scribe lines such that the alignment mark is left on the scribe line.

公开(公告)号：US20090227088A1

公开(公告)日：2009-09-10

申请号：US12465349

申请日：2009-05-13

申请人： Tsuyoshi KIDA ,  Takamitsu Noda

发明人： Tsuyoshi KIDA ,  Takamitsu Noda

IPC分类号： H01L21/78 ,  H01L23/544

CPC分类号： H01L21/78 ,  H01L22/34 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas 2; an electrode pad 5 formed along the edge of the semiconductor chip area 2; and a metal-containing accessory pattern 4 disposed in the scribe lines. In the second scribe lines 32, the accessory pattern 4 is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad 5 in the chip area 2.

摘要翻译： 半导体晶片1具有第一切割线31，其具有第一宽度，并且将半导体晶片1分割成多个区域; 第二划痕线32具有小于第一宽度的第二宽度，并将该区域划分成多个半导体芯片区域2; 沿着半导体芯片区域2的边缘形成的电极焊盘5; 以及设置在划线中的含金属的附件图案4。 在第二划片线32中，在与芯片区域2中具有电极焊盘5的边缘相邻的区域中的至少最外表面中不存在附件图案4。

公开(公告)号：US20080099454A1

公开(公告)日：2008-05-01

申请号：US11968830

申请日：2008-01-03

申请人： Tsuyoshi KIDA

发明人： Tsuyoshi KIDA

IPC分类号： B23K26/00

CPC分类号： B23K26/032 ,  B23K26/042 ,  B23K26/0853 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50

摘要： In a laser beam processing apparatus that processes a semiconductor wafer having a multi-layered wiring structure formed thereon, scribe lines defined thereon, and at least one alignment mark formed on any one of the scribe lines, a laser beam generator system generates a laser beam, and a movement system relatively moves the semiconductor wafer with respect to the laser beam such that the semiconductor wafer is irradiated with a laser beam along the scribe lines to partially remove the multi-layered wiring structure from the semiconductor wafer along the scribe lines. An irradiation control system controls the irradiation of the semiconductor wafer with the laser beam along the scribe lines such that the alignment mark is left on the scribe line.

摘要翻译： 在对其上形成有多层布线结构的半导体晶片进行处理的激光束处理装置中，在其上限定的划线以及形成在任一个划线上的至少一个对准标记，激光束发生器系统产生激光束 并且移动系统相对于激光束相对地移动半导体晶片，使得半导体晶片沿着划线照射激光束，以沿着划线部分地从半导体晶片去除多层布线结构。 照射控制系统利用激光束沿着划线来控制半导体晶片的照射，使得对准标记留在划线上。