公开(公告)号：US3946428A

公开(公告)日：1976-03-23

申请号：US506872

申请日：1974-09-17

申请人： Shinzo Anazawa ,  Seiichi Ueno ,  Isamu Nagasako ,  Tadashi Nawa ,  Toshiaki Irie ,  Shigeru Sando

发明人： Shinzo Anazawa ,  Seiichi Ueno ,  Isamu Nagasako ,  Tadashi Nawa ,  Toshiaki Irie ,  Shigeru Sando

IPC分类号： H01L23/047 ,  H01L23/057 ,  H01L23/16 ,  H01L23/66 ,  H01L23/02 ,  H01L25/04

CPC分类号： H01L23/66 ,  H01L23/047 ,  H01L23/057 ,  H01L23/16 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16195 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025

摘要： A semiconductor package device characterized by improved operation at ultra-high frequencies and by improved heat dissipation, includes an auxiliary metal stud mounted on a metal substrate. A semiconductor element, such as a field-effect transistor or bipolar transistor, is mounted on the auxiliary stud and has at least one electrode thereof electrically connected to the stud.

摘要翻译： 一种半导体封装器件，其特征在于在超高频率下改进的操作和通过改进的散热，包括安装在金属基板上的辅助金属螺柱。 诸如场效应晶体管或双极晶体管的半导体元件安装在辅助柱上，并且其至少一个电极电连接至螺柱。

公开(公告)号：USRE29218E

公开(公告)日：1977-05-10

申请号：US729286

申请日：1976-10-04

申请人： Shinzo Anazawa ,  Seiichi Ueno ,  Isamu Nagasako ,  Shigeru Sando

发明人： Shinzo Anazawa ,  Seiichi Ueno ,  Isamu Nagasako ,  Shigeru Sando

IPC分类号： H01L23/498 ,  H01L23/66

CPC分类号： H01L23/49811 ,  H01L23/66 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L24/48

摘要： A packaged semiconductor device for use at ultra-high frequencies is characterized by improved high frequency characteristics as a result of reduced stay capacitance and reduced energy loss. The device includes a dielectric substrate and at least two conductor layers each of which is integral and extends over the top, side, and bottom surfaces of the dielectric substrate. No part of the conductor layer on the top surface overlaps the part on the bottom surface when viewed in a direction normal to the substrate.

公开(公告)号：US4067040A

公开(公告)日：1978-01-03

申请号：US749114

申请日：1976-12-09

申请人： Naobumi Tsuzuki ,  Shinzo Anazawa ,  Shozo Noguchi

发明人： Naobumi Tsuzuki ,  Shinzo Anazawa ,  Shozo Noguchi

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/057 ,  H01L23/12 ,  H01L23/373 ,  H01L23/66 ,  H01L23/48 ,  H01L39/02

CPC分类号： H01L24/49 ,  H01L23/057 ,  H01L23/3731 ,  H01L23/66 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/49175 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/16195 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111

摘要： A semiconductor device, which provides efficient heat dissipation, includes a semiconductor support member formed of an insulating, thermally conductive material having a projecting portion on the top surface and a first conducting layer extending along the surfaces of the support members from the bottom to the projecting portion. An insulating wall member for installing terminals is disposed on the top surface of the semiconductor support member in areas around the projecting portion. A second conducting layer is formed on the top end face of the wall member, and a hollow portion is provided in the wall member below the second conducting layer.

摘要翻译： 提供高效散热的半导体器件包括由绝缘导热材料形成的半导体支撑构件，该半导体支撑构件具有在顶表面上的突出部分和沿着支撑构件的表面从底部延伸到突出部分的第一导电层 一部分。 用于安装端子的绝缘壁构件设置在半导体支撑构件的顶表面上的突出部分周围的区域中。 第二导电层形成在壁构件的顶端面上，中空部分设置在第二导电层下面的壁构件中。

公开(公告)号：US4527010A

公开(公告)日：1985-07-02

申请号：US403443

申请日：1982-07-30

申请人： Shinzo Anazawa ,  Hitoshi Yamada ,  Kuniharu Noda ,  Yasuyuki Fujimoto

发明人： Shinzo Anazawa ,  Hitoshi Yamada ,  Kuniharu Noda ,  Yasuyuki Fujimoto

IPC分类号： H01L23/12 ,  H01L23/047 ,  H01L23/498 ,  H05K5/06

CPC分类号： H01L23/047 ,  H01L23/49844 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/16195 ,  H01L2924/30107 ,  H01L2924/3025

摘要： An electronic part mounting construction, such as a transistor package or a substrate for a resin mold device, has a substrate for mounting an electronic part on a principal surface, at least one metallized layer deposited on the principal surface and soldered to the electronic part thereon, another metallized layer continuously extended from the at least one metallized layer in a direction perpendicular thereto, and an insulator layer deposited on the other metallized layer. The other metallized layer is provided on a side surface of a wall member or the substrate. The other metallized layer and the insulator layer may be formed by steps of forming a hole in an insulator sheet, depositing a metallized layer and an insulator layer successively on the surface of the hole, and leaving the metallized layer and the insulator layer at predetermined region(s) by punching the insulator sheet.

摘要翻译： 诸如晶体管封装或用于树脂模具装置的基板的电子部件安装结构具有用于将电子部件安装在主表面上的基板，沉积在主表面上的至少一个金属化层并焊接到其上的电子部件上 ，在与其垂直的方向从所述至少一个金属化层连续延伸的另一金属化层和沉积在另一金属化层上的绝缘体层。 另一个金属化层设置在壁构件或基板的侧表面上。 另一个金属化层和绝缘体层可以通过以下步骤形成：在绝缘片上形成孔，在孔的表面上依次沉积金属化层和绝缘体层，并将金属化层和绝缘体层留在预定区域 通过冲压绝缘片。

公开(公告)号：US4340901A

公开(公告)日：1982-07-20

申请号：US105964

申请日：1979-12-21

申请人： Shinzo Anazawa ,  Hideaki Kozu

发明人： Shinzo Anazawa ,  Hideaki Kozu

IPC分类号： H01L23/50 ,  H01L21/48 ,  H01L23/057 ,  H01L23/498 ,  H01L23/66 ,  H05K3/34 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52

CPC分类号： H01L23/49811 ,  H01L21/4853 ,  H01L23/057 ,  H01L23/66 ,  H05K3/3405 ,  H01L2924/0002 ,  H05K2201/1034 ,  H05K2201/10772 ,  H05K3/3421

摘要： An improved brazing structure is disclosed in which at least a tip end portion to be brazed of a lead is bent and this tip end portion is bonded to a metallized layer by a brazing material substantially in perpendicular to the plane of the metallized layer.

摘要翻译： 公开了一种改进的钎焊结构，其中待钎焊的引线的至少末端部分被弯曲，并且该顶端部分通过基本上垂直于金属化层的平面的钎焊材料结合到金属化层。

公开(公告)号：US4172261A

公开(公告)日：1979-10-23

申请号：US868458

申请日：1978-01-10

申请人： Naobumi Tsuzuki ,  Shinzo Anazawa

发明人： Naobumi Tsuzuki ,  Shinzo Anazawa

IPC分类号： H01L23/04 ,  H01L21/331 ,  H01L23/047 ,  H01L23/12 ,  H01L23/42 ,  H01L23/66 ,  H01L29/73 ,  H01L23/02 ,  H01L39/02

CPC分类号： H01L23/047 ,  H01L23/42 ,  H01L23/66 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/32188 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111

摘要： A semiconductor device is provided with a metal header of a size sufficiently small such that only a semiconductor element holding plate which requires heat dissipation can be mounted thereon. The metal header supports at its upper fringe portion an apertured member having a penetrating opening sealed along the opening. An insulative outer frame having a thermal expansion coefficient of the same order as that of the apertured member is supported on the peripheral portion of the apertured member. A lid member for hermetic sealing is bonded onto the outer frame.

摘要翻译： 半导体器件设置有尺寸足够小的金属集管，使得仅可以在其上安装需要散热的半导体元件保持板。 金属集管在其上边缘部分处支撑有沿着开口密封的具有穿透开口的有孔构件。 具有与多孔构件的热膨胀系数相同的热膨胀系数的绝缘外框架支撑在多孔构件的周边部分上。 用于气密密封的盖构件结合到外框上。